Patents by Inventor Srinivas Yarlagadda

Srinivas Yarlagadda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9382642
    Abstract: The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1B, 1C, 1D) in such a manner as to form a counterwall and to be a wall of said zone (3).
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: July 5, 2016
    Assignee: LPE S.P.A.
    Inventors: Srinivas Yarlagadda, Natale Speciale, Franco Preti, Mario Preti
  • Publication number: 20120027646
    Abstract: The present invention relates to a reaction chamber of an epitaxial reactor that essentially consists of a quartz piece; the quartz piece comprises a quartz piece portion (1) having an internal cavity (2) defined by walls (1A, 1B, 1C, 1D); the cavity (2) comprises a reaction and deposition zone (3) of the epitaxial reactor; the zone (3) is adapted to house a susceptor (4) to be heated therein; the reaction chamber also comprises a quartz component (5) arranged close to said walls (1A, 1B, 1C, 1D) in such a manner as to form a counterwall and to be a wall of said zone (3).
    Type: Application
    Filed: April 16, 2010
    Publication date: February 2, 2012
    Inventors: Srinivas Yarlagadda, Natale Speciale, Franco Preti, Mario Preti
  • Patent number: 7153368
    Abstract: A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).
    Type: Grant
    Filed: September 5, 2002
    Date of Patent: December 26, 2006
    Assignee: LPE SpA
    Inventors: Franco Preti, Srinivas Yarlagadda
  • Publication number: 20050005858
    Abstract: A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).
    Type: Application
    Filed: September 5, 2002
    Publication date: January 13, 2005
    Inventors: Franco Preti, Srinivas Yarlagadda