Abstract: Various implementations described herein are related to a device having sensing circuitry that receives an input signal and provides an output signal based on sensing a resistance differential between multiple shield resistors or based on sensing a change in voltage across a shield wire of a shield wiring network. The device includes comparing circuitry that receives the output signal and provides an alarm signal based on detecting a tampering event associated with the resistance differential or the change in voltage.

Abstract: Various implementations described herein are related to a device having sensing circuitry that receives an input signal and provides an output signal based on sensing a resistance differential between multiple shield resistors or based on sensing a change in voltage across a shield wire of a shield wiring network. The device includes comparing circuitry that receives the output signal and provides an alarm signal based on detecting a tampering event associated with the resistance differential or the change in voltage.

Abstract: A power distribution circuit can include a comparator circuit that is formed of an inverter. The inverter can be configured with a trip voltage value (Vtrip) different than half a supply voltage value (VDD/2) for further energy efficiencies in discharging a charge storage device used in the power distribution circuit to gain security.

Abstract: Methods, apparatuses, and systems related to removing a hard mask are described. An example method includes patterning a silicon hard mask on a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes an opening through the semiconductor structure using the patterned hard mask to form a pillar support. The method further includes forming a silicon liner material on the semiconductor structure. The method further includes removing the silicon liner material using a wet etch process.

Abstract: Methods, apparatuses, and systems related to removing a hard mask are described. An example method includes patterning a silicon hard mask on a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes an opening through the semiconductor structure using the patterned hard mask to form a pillar support. The method further includes forming a silicon liner material on the semiconductor structure. The method further includes removing the silicon liner material using a wet etch process.

Abstract: An array of data values, such as an image of pixel values, is stored in a main memory (12). A processing operation is performed using the pixel values. The processing operation defines time points of movement of a multidimensional region (20, 22) of locations in the image. Pixel values from inside and around the region are cached for processing. At least when a cache miss occurs for a pixel value from outside the region, cache replacement of data in cache locations (142) is performed. Locations that store pixel data for locations in the image outside the region (20, 22) are selected for replacement, selectively exempting from replacement cache locations (142) that store pixel data locations in the image inside the region. In embodiments, different types of cache structure are used for caching data values inside and outside the region. In an embodiment the cache locations for pixel data inside the regions support a higher level of output parallelism than the cache locations for pixel data around the region.

Abstract: A program of instruction words is executed with a VLIW data processing apparatus. The apparatus comprises a plurality of functional units capable of executing a plurality of instructions from each instruction word in parallel. The instructions from each of at least some of the instruction words are fetched from respective memory units in parallel, addressed with an instruction address that is common for the functional units. Translation of the instruction address into a physical address can be modified for one or more particular ones of the memory units. Modification is controlled by modification update instructions in the program. Thus, it can be selected dependent on program execution which instructions from the memory units will be combined into the instruction word in response to the instruction address.

Abstract: An array of data values, such as an image of pixel values, is stored in a main memory (12). A processing operation is performed using the pixel values. The processing operation defines time points of movement of a multidimensional region (20, 22) of locations in the image. Pixel values from inside and around the region are cached for processing. At least when a cache miss occurs for a pixel value from outside the region, cache replacement of data in cache locations (142) is performed. Locations that store pixel data for locations in the image outside the region (20, 22) are selected for replacement, selectively exempting from replacement cache locations (142) that store pixel data locations in the image inside the region. In embodiments, different types of cache structure are used for caching data values inside and outside the region. In an embodiment the cache locations for pixel data inside the regions support a higher level of output parallelism than the cache locations for pixel data around the region.