Abstract: Apparatuses, systems, and techniques to optimize processor performance. In at least one embodiment, a method increases an operation voltage of one or more processors, based at least in part, on one or more error rates of the one or more processors.

Abstract: Aspects of the present disclose involve a method, a device, and a system comprising a processor and a machine-readable storage medium storing at a set of instructions for identification and authentication of user profiles associated with a digital television system and displaying information related thereto. In example embodiments, the method includes identifying a user profile registered with a content presentation device based on received identification data that includes biometric data. The method further includes receiving, from a server, identifiers of a set of recently watched channels associated with the user profile and causing presentation of a recent channels interface that includes selectable elements corresponding to the set of recently watched channels.

Abstract: Aspects of the present disclose involve a method, a device, and a system comprising a processor and a machine-readable storage medium storing at a set of instructions for identification and authentication of user profiles associated with a digital television system and displaying information related thereto. In example embodiments, the method includes identifying a user profile registered with a content presentation device based on received identification data that includes biometric data. The method further includes receiving, from a server, identifiers of a set of recently watched channels associated with the user profile and causing presentation of a recent channels interface that includes selectable elements corresponding to the set of recently watched channels.

Abstract: A method includes providing a type IV semiconductor substrate having a main surface, forming a type III-V semiconductor channel region over the type IV semiconductor substrate, the type III-V semiconductor channel region comprising a two-dimensional carrier gas, forming a type III-V semiconductor lattice transition region between the type IV semiconductor substrate and the type III-V semiconductor channel region, wherein forming the type III-V semiconductor lattice transition region incudes forming a first lattice transition layer over the type IV semiconductor substrate, the first lattice transition layer having a first metallic concentration, forming a third lattice transition layer over the first lattice transition layer, the third lattice transition layer having a third metallic concentration higher than the first metallic concentration, and forming a fourth lattice transition layer over the third lattice transition layer, the fourth lattice transition layer having a fourth metallic lower than the first m

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: Aspects of the present disclose involve a method, a device, and a system comprising a processor and a machine-readable storage medium storing at a set of instructions for identification and authentication of user profiles associated with a digital television system and displaying information related thereto. In example embodiments, the method includes identifying a user profile registered with a content presentation device based on received identification data that includes biometric data. The method further includes receiving, from a server, identifiers of a set of recently watched channels associated with the user profile and causing presentation of a recent channels interface that includes selectable elements corresponding to the set of recently watched channels.

Abstract: Aspects of the present disclose involve a method, a device, and a system comprising a processor and a machine-readable storage medium storing at a set of instructions for identification and authentication of user profiles associated with a digital television system and displaying information related thereto. In example embodiments, the method includes identifying a user profile registered with a content presentation device based on received identification data that includes biometric data. The method further includes receiving, from a server, identifiers of a set of recently watched channels associated with the user profile and causing presentation of a recent channels interface that includes selectable elements corresponding to the set of recently watched channels.

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: Aspects of the present disclose involve a method, a device, and a system comprising a processor and a machine-readable storage medium storing at a set of instructions for identification and authentication of user profiles associated with a digital television system and displaying information related thereto. In example embodiments, the method includes identifying a user profile registered with a content presentation device based on received identification data that includes biometric data. The method further includes receiving, from a server, identifiers of a set of recently watched channels associated with the user profile and causing presentation of a recent channels interface that includes selectable elements corresponding to the set of recently watched channels.

Abstract: This invention relates to the development of processes for the preparation of functionalized castor oil derivatives namely ring-opened glyceryl ricinoleates, epoxy alkyl ricinoleates and ring-opened alkyl ricinoleates with tailorable properties from epoxidized castor oil as raw material using heterogeneous acid and base catalysts. More particularly, the invention employs two reaction chemistries namely ring-opening and transesterification using Amberlyst 15 as solid acid catalyst for the former and oxides derived from CaAl layered double hydroxide (CaAl-LDH) as solid base catalyst for the latter and combinations thereof. Furthermore, both the catalysts are reusable and the products are easily separable after the reaction by simple physical processes.

Abstract: A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is formed over the type IV semiconductor substrate. A type III-V semiconductor lattice transition region that is configured to alleviate mechanical stress arising from lattice mismatch is formed between the type IV semiconductor substrate and the type III-V semiconductor channel region. Forming the type III-V semiconductor lattice transition region includes forming a first lattice transition layer having a first metallic concentration over the type IV semiconductor substrate, forming a third lattice transition layer having a third metallic concentration that is higher than the first metallic concentration over the first lattice transition layer, and forming a fourth lattice transition layer having a fourth metallic concentration that is lower than the first metallic concentration over the third lattice transition layer.

Abstract: Aspects of the present disclose involve a method, a device, and a system comprising a processor and a machine-readable storage medium storing at a set of instructions for identification and authentication of user profiles associated with a digital television system and displaying information related thereto. In example embodiments, the method includes identifying a user profile registered with a content presentation device based on received identification data that includes biometric data. The method further includes receiving, from a server, identifiers of a set of recently watched channels associated with the user profile and causing presentation of a recent channels interface that includes selectable elements corresponding to the set of recently watched channels.

Abstract: There are disclosed herein various implementations of a semiconductor component including one or more aluminum silicon nitride layers. The semiconductor component includes a substrate, a group III-V intermediate body situated over the substrate, a group III-V buffer layer situated over the group III-V intermediate body, and a group III-V device fabricated over the group III-V buffer layer. The group III-V intermediate body includes the one or more aluminum silicon nitride layers.

Abstract: There are disclosed herein various implementations of a semiconductor component including one or more aluminum silicon nitride layers. The semiconductor component includes a substrate, a group III-V intermediate body situated over the substrate, a group III-V buffer layer situated over the group III-V intermediate body, and a group III-V device fabricated over the group III-V buffer layer. The group III-V intermediate body includes the one or more aluminum silicon nitride layers.

Abstract: There are disclosed herein various implementations of a semiconductor component with a multi-layered nucleation body and method for its fabrication. The semiconductor component includes a substrate, a nucleation body situated over the substrate, and a group III-V semiconductor device situated over the nucleation body. The nucleation body includes a bottom layer formed at a low growth temperature, and a top layer formed at a high growth temperature. The nucleation body also includes an intermediate layer that is formed substantially continuously using a varying intermediate growth temperature.

Abstract: Aspects of the present disclose involve a method, a device, and a system comprising a processor and a machine-readable storage medium storing at a set of instructions for identification and authentication of user profiles associated with a digital television system and displaying information related thereto. In example embodiments, the method includes identifying a user profile registered with a content presentation device based on received identification data that includes biometric data. The method further includes receiving, from a server, identifiers of a set of recently watched channels associated with the user profile and causing presentation of a recent channels interface that includes selectable elements corresponding to the set of recently watched channels.

Abstract: There are disclosed herein various implementations of a semiconductor component with a multi-layered nucleation body and method for its fabrication. The semiconductor component includes a substrate, a nucleation body situated over the substrate, and a group III-V semiconductor device situated over the nucleation body. The nucleation body includes a bottom layer formed at a low growth temperature, and a top layer formed at a high growth temperature. The nucleation body also includes an intermediate layer that is formed substantially continuously using a varying intermediate growth temperature.

Abstract: This invention relates to the development of processes for the preparation of functionalized castor oil derivatives namely ring-opened glyceryl ricinoleates, epoxy alkyl ricinoleates and ring-opened alkyl ricinoleates with tailorable properties from epoxidized castor oil as raw material using heterogeneous acid and base catalysts. More particularly, the invention employs two reaction chemistries namely ring-opening and transesterification using Amberlyst 15 as solid acid catalyst for the former and oxides derived from CaAl layered double hydroxide (CaAl-LDH) as solid base catalyst for the latter and combinations thereof. Furthermore, both the catalysts are reusable and the products are easily separable after the reaction by simple physical processes.

Abstract: A compound semiconductor device includes a first III-nitride buffer layer doped with carbon and/or iron, a second III-nitride buffer layer above the first III-nitride buffer layer and doped with carbon and/or iron, a first III-nitride device layer above the second III-nitride buffer layer, and a second III-nitride device layer above the first III-nitride device layer and having a different band gap than the first III-nitride device layer. A two-dimensional charge carrier gas arises along an interface between the first and second III-nitride device layers. The first III-nitride buffer layer has an average doping concentration of carbon and/or iron which is greater than that of the second III-nitride buffer layer. The second III-nitride buffer layer has an average doping concentration of carbon and/or iron which is comparable to or greater than that of the first III-nitride device layer. A method of manufacturing the compound semiconductor device is described.