Patents by Inventor Srishti Chugh

Srishti Chugh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220415709
    Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.
    Type: Application
    Filed: June 10, 2022
    Publication date: December 29, 2022
    Inventors: Niloy Mukherjee, Hae Young Kim, Jerry Mack, Jae Seok Heo, Sung-Hoon Jung, Somilkumar J. Rathi, Srishti Chugh, Nariman Naghibolashrafi, Yoshikazu Okuyama, Bunsen B. Nie
  • Patent number: 11361992
    Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: June 14, 2022
    Assignee: Eugenus, Inc.
    Inventors: Niloy Mukherjee, Hae Young Kim, Jerry Mack, Jae Seok Heo, Sung-Hoon Jung, Somilkumar J. Rathi, Srishti Chugh, Nariman Naghibolashrafi, Yoshikazu Okuyama, Bunsen B. Nie
  • Publication number: 20210104433
    Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.
    Type: Application
    Filed: October 8, 2019
    Publication date: April 8, 2021
    Inventors: Niloy Mukherjee, Hae Young Kim, Jerry Mack, Jae Seok Heo, Sung-Hoon Jung, Somilkumar J. Rathi, Srishti Chugh, Nariman Naghibolashrafi, Yoshikazu Okuyama, Bunsen B. Nie