Patents by Inventor Srividya Krishnamurthy

Srividya Krishnamurthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200005242
    Abstract: Disclosed are systems, methods, and non-transitory computer-readable media for generating personalized insights. An insight generation system, in response to a first user of an online service having added a second user as a recipient of a message, gathers profile data of the second user and profile data of an entity that is maintained by the online service. The insight generation system determines a set of insights for the second user, based on the profile data of the second user, the profile data of the entity, and a set of insight algorithms. Each insight indicates commonalities between the second user and the entity. The insight generation system selects a subset of the set of insights, yielding a set of recommended insights, and provides the set of recommended insights to a client device of the first user.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 2, 2020
    Inventors: Harsha Badami Nagaraj, Peter Hume Rigano, Srividya Krishnamurthy, Sahin Cem Geyik, Yufei Wang
  • Publication number: 20150056798
    Abstract: Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.
    Type: Application
    Filed: October 3, 2014
    Publication date: February 26, 2015
    Inventors: Noel Rocklein, Durai Ramaswamy, Dale W. Collins, Swapnil Lengade, Srividya Krishnamurthy, Mark S. Korber
  • Patent number: 8859382
    Abstract: Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: October 14, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Noel Rocklein, D. V. Nirmal Ramaswamy, Dale W. Collins, Swapnil Lengade, Srividya Krishnamurthy, Mark Korber
  • Publication number: 20130109147
    Abstract: Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.
    Type: Application
    Filed: October 26, 2011
    Publication date: May 2, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Noel Rocklein, D.V. Nirmal Ramaswamy, Dale W. Collins, Swapnil Lengade, Srividya Krishnamurthy, Mark Korber