Patents by Inventor Sruthi Muralidharan
Sruthi Muralidharan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10096488Abstract: The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure.Type: GrantFiled: May 30, 2017Date of Patent: October 9, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Michael Ganz, Bingwu Liu, Johannes Marinus Van Meer, Sruthi Muralidharan
-
Patent number: 9812336Abstract: The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure.Type: GrantFiled: October 21, 2014Date of Patent: November 7, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Michael Ganz, Bingwu Liu, Johannes Marinus Van Meer, Sruthi Muralidharan
-
Publication number: 20170263733Abstract: The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure.Type: ApplicationFiled: May 30, 2017Publication date: September 14, 2017Applicant: GLOBALFOUNDRIES Inc.Inventors: Michael GANZ, Bingwu LIU, Johannes Marinus VAN MEER, Sruthi MURALIDHARAN
-
Patent number: 9508850Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.Type: GrantFiled: February 1, 2016Date of Patent: November 29, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Zhenyu Hu, Richard J. Carter, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child
-
Publication number: 20160163862Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.Type: ApplicationFiled: February 1, 2016Publication date: June 9, 2016Applicant: GLOBALFOUNDRIES INC.Inventors: ZHENYU HU, Richard J. Carter, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child
-
Patent number: 9363033Abstract: The present invention relates to an optical transmitter for transmitting data. The optical transmitter includes a pulse generator for generating N data streams overlapping in time from a de-multiplexed data source. Each respective data stream has pulses with shapes unique to that respective data stream. The transmitter also includes an optical source optically transmitting an output pulse that is generated by summing the uniquely shaped pulses from each respective data stream that are overlapping in time. Each output pulse represents N bits of the data source, where N>1.Type: GrantFiled: January 10, 2012Date of Patent: June 7, 2016Assignee: RENSSELAER POLYTECHNIC INSTITUTEInventors: Partha S. Dutta, Sruthi Muralidharan
-
Patent number: 9293586Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.Type: GrantFiled: July 17, 2013Date of Patent: March 22, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Zhenyu Hu, Richard J. Carter, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child
-
Patent number: 9219002Abstract: Approaches for improving overlay performance for an integrated circuit (IC) device are provided. Specifically, the IC device (e.g., a fin field effect transistor (FinFET)) is provided with an oxide layer and a pad layer formed over a substrate, wherein the oxide layer comprises an alignment and overlay mark, an oxide deposited in a set of openings formed through the pad layer and into the substrate, a mandrel layer deposited over the oxide material and the pad layer, and a set of fins patterned in the IC device without etching the alignment and overlay mark. With this approach, the alignment and overlay mark is provided with the fin cut (FC) layer and, therefore, avoids finification.Type: GrantFiled: September 17, 2013Date of Patent: December 22, 2015Assignee: GLOBALFOUNDRIES INC.Inventors: Zhenyu Hu, Andy Wei, Qi Zhang, Richard J. Carter, Hongliang Shen, Daniel Pham, Sruthi Muralidharan
-
Publication number: 20150200111Abstract: Embodiments of the present invention provide improved methods for fabrication of finFETs. During finFET fabrication, a film, such as amorphous silicon, is deposited on a semiconductor substrate which has regions with fins and regions without fins. A fill layer is deposited on the film and planarized to form a flush surface. A recess or etch process is used to form a planar surface with all portions of the fill layer removed. A finishing process such as a gas cluster ion beam process may be used to further smooth the substrate surface. This results in a film having a very uniform thickness across the structure (e.g. a semiconductor wafer), resulting in improved within-wafer (WiW) uniformity and improved within-chip (WiC) uniformity.Type: ApplicationFiled: January 13, 2014Publication date: July 16, 2015Applicant: GLOBALFOUNDRIES Inc.Inventors: Sruthi Muralidharan, Zhenyu Hu, Qi Zhang, Ja-Hyung Han, Dinesh Koli, Zhuangfei Chen
-
Publication number: 20150115371Abstract: The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure.Type: ApplicationFiled: October 21, 2014Publication date: April 30, 2015Applicant: GLOBALFOUNDRIES Inc.Inventors: Michael GANZ, Bingwu LIU, Johannes Marinus VAN MEER, Sruthi MURALIDHARAN
-
Publication number: 20150076653Abstract: Approaches for improving overlay performance for an integrated circuit (IC) device are provided. Specifically, the IC device (e.g., a fin field effect transistor (FinFET)) is provided with an oxide layer and a pad layer formed over a substrate, wherein the oxide layer comprises an alignment and overlay mark, an oxide deposited in a set of openings formed through the pad layer and into the substrate, a mandrel layer deposited over the oxide material and the pad layer, and a set of fins patterned in the IC device without etching the alignment and overlay mark. With this approach, the alignment and overlay mark is provided with the fin cut (FC) layer and, therefore, avoids finification.Type: ApplicationFiled: September 17, 2013Publication date: March 19, 2015Applicant: GLOBALFOUNDRIES Inc.Inventors: Zhenyu Hu, Andy Wei, Qi Zhang, Richard J. Carter, Hongliang Shen, Daniel Pham, Sruthi Muralidharan
-
Publication number: 20150021695Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.Type: ApplicationFiled: July 17, 2013Publication date: January 22, 2015Inventors: Zhenyu Hu, Richard J. Carter, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child
-
Publication number: 20130336659Abstract: The present invention relates to an optical transmitter for transmitting data. The optical transmitter includes a pulse generator for generating N data streams overlapping in time from a de-multiplexed data source. Each respective data stream has pulses with shapes unique to that respective data stream. The transmitter also includes an optical source optically transmitting an output pulse that is generated by summing the uniquely shaped pulses from each respective data stream that are overlapping in time. Each output pulse represents N bits of the data source, where N>1.Type: ApplicationFiled: January 10, 2012Publication date: December 19, 2013Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: Partha S. Dutta, Sruthi Muralidharan