Patents by Inventor Stéphane Ange VÉZIAN

Stéphane Ange VÉZIAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Doped rare earth nitride materials and devices comprising same
    Patent number: 10415153
    Abstract: Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: September 17, 2019
    Inventors: Franck Natali, Benjamin John Ruck, Harry Joseph Trodahl, Stephane Ange Vezian
  • Rare earth nitride structure or device and fabrication method
    Patent number: 10347483
    Abstract: Structure or device comprising a hexagonal crystal layer or hexagonal crystal substrate, and a (001)-oriented rare earth nitride epitaxial layer on the hexagonal crystal layer or hexagonal crystal substrate.
    Type: Grant
    Filed: May 29, 2017
    Date of Patent: July 9, 2019
    Inventors: Franck Natali, Stéphane Ange Vézian, Jay Ross Peng Cheong Chan, Benjamin John Ruck, Harry Joseph Trodahl
  • Rare Earth Nitride Structure or Device and Fabrication Method
    Publication number: 20180339912
    Abstract: Structure or device comprising a hexagonal crystal layer or hexagonal crystal substrate, and a (001)-oriented rare earth nitride epitaxial layer on the hexagonal crystal layer or hexagonal crystal substrate.
    Type: Application
    Filed: May 29, 2017
    Publication date: November 29, 2018
    Inventors: Franck Natali, Stéphane Ange Vézian, Jay Ross Peng Cheong Chan, Benjamin John Ruck, Harry Joseph Trodahl
  • Rare earth nitride and group III-nitride structure or device
    Patent number: 10043871
    Abstract: Structure or device comprises a AlxGa1-xN or InyGa1-yN layer or substrate, a rare earth nitride epitaxial layer, and an AlzGa1-zN epitaxial interlayer between the rare earth nitride epitaxial layer and the AlxGa1-xN or InyGa1-yN layer or substrate. The interlayer is in direct contact with the rare earth nitride epitaxial layer and the AlxGa1-xN or InyGa1-yN layer or substrate.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: August 7, 2018
    Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Franck Natali, Stéphane Ange Vézian
  • DOPED RARE EARTH NITRIDE MATERIALS AND DEVICES COMPRISING SAME
    Publication number: 20170022632
    Abstract: Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices.
    Type: Application
    Filed: March 31, 2015
    Publication date: January 26, 2017
    Inventors: Franck NATALI, Benjamin John RUCK, Harry Joseph TRODAHL, Stéphane Ange VÉZIAN