Patents by Inventor Stéphane CADOT

Stéphane CADOT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240203731
    Abstract: A method including the following successive steps: a) forming, on a surface of a support substrate, a first layer made of a material selected from among a lamellar dichalcogenide or a lamellar chalcogenide including a stack of sheets; b) forming, by physical vapor deposition on the side of said surface of the support substrate, a second layer made of a first III-N semiconductor material coating the first layer; and c) carrying out a thermo-chemical treatment of the first layer resulting, in the first layer, in a conversion of van der Waals bonds between the sheets of the first layer into covalent bonds.
    Type: Application
    Filed: December 13, 2023
    Publication date: June 20, 2024
    Applicant: Commissariat à I'Énergie Atomique et aux Énergies Alternatives
    Inventors: Rémy Gassilloud, Julien Patouillard, Bérangére Hyot, Amélie Dussaigne, Stéphane Cadot, Matthew Charles, François Martin, Nicolas Gauthier, Christine Raynaud
  • Publication number: 20230183857
    Abstract: A method is for depositing a thin tungsten and/or molybdenum sulfide film on a substrate chemically, under vacuum.
    Type: Application
    Filed: December 14, 2022
    Publication date: June 15, 2023
    Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives
    Inventors: Rémy GASSILLOUD, Stéphane CADOT
  • Patent number: 11286557
    Abstract: A method of preparing a crystalline thin film having a formula MY2 includes (1) preparing an MYx amorphous film by atomic layer deposition on a surface of a substrate, and (2) annealing the amorphous MYx film at 350° C. or more to provide the crystalline MY2 film. The amorphous MYx film is formed from at least one metal M precursor and at least one element Y precursor, wherein x is 1.5 to 3.1, M is tungsten or molybdenum, and Y is sulfur or selenium. Step (1) includes a) introducing a first metal M precursor or element Y precursor into a deposition chamber, b) purging with inert gas, c) introducing a second metal M precursor when the first precursor is element Y, or element Y precursor when the first precursor is metal M, d) purging with inert gas, e) repeating steps a) to d), and f) obtaining the amorphous MYx film.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: March 29, 2022
    Assignees: Commissariat A L'Energie Atomique Et Aux Engergies Alternatives, Centre National De La Recherche Scientifique, Universite Claude Bernard Lyon 1, CPE Lyon Formation Continue et Recherche
    Inventors: Stéphane Cadot, Francois Martin, Elsje Quadrelli, Chloé Thieuleux
  • Publication number: 20210193907
    Abstract: Method for manufacturing a thin layer of textured AlN comprising the following successive steps: a) providing a substrate having an amorphous surface, b) forming a polycrystalline nucleation layer of MS2 with M=Mo, W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains the base planes of which are parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, c) depositing aluminum nitride on the nucleation layer, leading to the formation of a thin layer of textured AlN.
    Type: Application
    Filed: December 18, 2020
    Publication date: June 24, 2021
    Inventors: Stéphane Cadot, François Martin, Rémy Gassiloud
  • Publication number: 20210010133
    Abstract: A method to manufacture a film made of vanadium disulphide by chemical vapor deposition on a previously heated substrate, includes successive procedures implemented in a vacuum reactor: injection of at least one organometallic molecule of vanadium, where the vanadium has a valence of less than or equal to 4; drainage of the reactor; injection of at least one sulphur molecule including at least one free thiol group, or forming a reaction intermediate comprising at least one free thiol group; injection of a reducing gas.
    Type: Application
    Filed: June 26, 2020
    Publication date: January 14, 2021
    Inventors: Rémy GASSILLOUD, Stéphane CADOT, Mathias FRACCAROLI
  • Publication number: 20190177838
    Abstract: A method of preparing a crystalline thin film having a formula MY2 includes (1) preparing an MYx amorphous film by atomic layer deposition on a surface of a substrate, and (2) annealing the amorphous MYx film at 350° C. or more to provide the crystalline MY2 film. The amorphous MYx film is formed from at least one metal M precursor and at least one element Y precursor, wherein x is 1.5 to 3.1, M is tungsten or molybdenum, and Y is sulfur or selenium. Step (1) includes a) introducing a first metal M precursor or element Y precursor into a deposition chamber, b) purging with inert gas, c) introducing a second metal M precursor when the first precursor is element Y, or element Y precursor when the first precursor is metal M, d) purging with inert gas, e) repeating steps a) to d), and f) obtaining the amorphous MYx film.
    Type: Application
    Filed: February 12, 2019
    Publication date: June 13, 2019
    Applicants: Commissariat A. L 'Energie Atomique Et Aux Energies Alternatives, Centre National De La Recherche Scientifique, Universite Claude Bernard Lyon 1, CPE Lyon Formation Continue et Recherche
    Inventors: Stéphane CADOT, Francois MARTIN, Elsje QUADRELLI, Chloé THIEULEUX
  • Publication number: 20150211112
    Abstract: This method relates to the preparation by ALD of a thin film of formula MYx, x being in the range from 1.5 to 3.1. According to this method, MYx is deposited by ALD on a substrate, from at least one precursor of metal M, and at least one precursor of element Y; M being tungsten and/or molybdenum; the degree of oxidation of metal M in the precursor of metal M being in the range from 3 to 6; the metal of the precursor of metal M only including simple or multiple bonds M-Z and/or M-M with Z=C, N, H, and any combination of these atoms; Y being sulfur and/or selenium; the substrate temperature being lower than or equal to 350° C.
    Type: Application
    Filed: January 23, 2015
    Publication date: July 30, 2015
    Inventors: Stéphane CADOT, Francois MARTIN, Elsje QUADRELLI, Chloé THIEULEUX