Abstract: A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ2, with X, Y and Z?I, Br, and an FACl additive, the molar ratio of cesium to lead is between approximately 4% and 22%, the molar ratio of FACl relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type CsxFA(1?x+w)Pb(IyBr(1?y))3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).

Abstract: The present invention relates to photopolymerizable adhesive compositions used in the encapsulation of electronic and optoelectronic devices, in particular flexible electronic and optoelectronic devices, for example photovoltaic cells, in order to protect them against gas and moisture permeation.

Abstract: The present disclosure relates to a method (400) for detecting wear of at least one perovskite solar cell, the method comprising the steps of: a) providing at least one electrical characteristic (402) of said at least one perovskite solar cell; b) measuring a photoluminescence signal (411) of said at least one perovskite solar cell only if the electrical characteristic provided at step a) is within a predefined range; c) comparing the photoluminescence signal measured at step b) to a reference signal (413); and d) if said photoluminescence signal exceeds the reference signal by a predefined deviation value, providing a wear detection signal to a user (407).

Abstract: Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell including an N-layer with a controlled carbon content. A tandem photovoltaic device, comprising, in this superimposition order: A/ a silicon-based sub-cell A, in particular a silicon heterojunction sub-cell or a TOPCon architecture sub-cell; and B/ a perovskite-based sub-cell B, comprising at least: —an N-type conductive or semiconductor layer (ETL); —a P-type conductive or semiconductor layer (HTL); and —a perovskite-type active layer, interposed between said N-type and P-type conductive or semiconductor layers, wherein the N-type conductive or semiconductor layer is based on individualised nanoparticles of N-type metal oxide(s), and has an atomic carbon content lower than or equal to 20%.

Abstract: A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ2, with X, Y and Z = I, Br, and an FAC1 additive, the molar ratio of cesium to lead is between approximately 4 % and 22%, the molar ratio of FAC1 relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type CsxFA(1-x+w)Pb(IyBr(1-y))3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).

Abstract: A photovoltaic module including: several photovoltaic cells disposed side by side, and electrically connected to each other, an encapsulating assembly, configured to encapsulate the photovoltaic cells, and a barrier layer disposed at an interface between the encapsulating assembly and at least one photovoltaic cell, the barrier layer being configured to at least partially cover the at least one photovoltaic cell, and to have an O2 gas transmission rate lower than that of the encapsulating assembly, and a water vapor transmission rate less than or equal to 10-2 g/m2/day measured at 38° C. and 85% humidity level, so as to form a barrier to the transmission of water vapor and O2 gas.

Abstract: A cell for measuring the permeation of a target gas through a sample includes upstream and downstream chambers connected by an opening, a primary seal in contact with the bottom of the upstream chamber and surrounding the opening, and a removable sample holder and means for assembling the sample holder in the cell. Upper and lower frames included in the sample holder are each provided with a through opening. The sample holder includes means for assembling the sample in the sample holder and a first seal flush with the front surface of the lower frame, and surrounding the through opening of the lower frame. In the lower frame of the sample holder, a second seal is flush with the front surface of the lower frame, surrounding the through opening of the lower frame, and being surrounded with the first seal, and a second channel emerging between the two secondary seals.

Abstract: The invention relates to a method for measuring permeation of gases through a material comprising the following steps: a) Supplying gas to a permeation enclosure (10) during which a first chamber (11) is supplied with a target gas flow comprising at least one target gas corresponding to a gas for which one tries to determine the permeation through the material (M), and simultaneous supplying gas to a measurement enclosure (20) with at least one calibrated flow comprising at least one reference gas different from the target gas; b) during the gas supply step, measuring in the measurement enclosure (20) the reference gas present at instant (t) and the target gas present at the same instant (t) after having crossed the material (M) by permeation; c) calculating a correction factor at instant (t) by comparing the measurement of the reference gas present at instant (t) with the reference gas supply calibrated flow; and d) determining the permeation of the material (M) to said gas, from the measurement of the ta

Abstract: An organic electronic device containing a stack successively including a polymer substrate covered with a first layer E1 made of conductive or semiconductor material; a hole transport layer HTL; an active layer A; and a second layer E2 made of conductive or semiconductor material. The HTL layer is a bilayer formed of a so-called neutral layer based on PEDOT:PSS and of a so-called acid layer based on PEDOT:PSS. The neutral layer is in contact with first layer E1 while the acid layer is in contact with active layer A.

Abstract: A cell for measuring the permeation of a target gas through a sample includes upstream and downstream chambers connected by an opening, a primary seal in contact with the bottom of the upstream chamber and surrounding the opening, and a removable sample holder and means for assembling the sample holder in the cell. Upper and lower frames included in the sample holder are each provided with a through opening. The sample holder includes means for assembling the sample in the sample holder and a first seal flush with the front surface of the lower frame, and surrounding the through opening of the lower frame. In the lower frame of the sample holder, a second seal is flush with the front surface of the lower frame, surrounding the through opening of the lower frame, and being surrounded with the first seal, and a second channel emerging between the two secondary seals.

Abstract: The invention relates to a method for measuring permeation of gases through a material comprising the following steps: a) Supplying gas to a permeation enclosure (10) during which a first chamber (11) is supplied with a target gas flow comprising at least one target gas corresponding to a gas for which one tries to determine the permeation through the material (M), and simultaneous supplying gas to a measurement enclosure (20) with at least one calibrated flow comprising at least one reference gas different from the target gas; b) during the gas supply step, measuring in the measurement enclosure (20) the reference gas present at instant (t) and the target gas present at the same instant (t) after having crossed the material (M) by permeation; c) calculating a correction factor at instant (t) by comparing the measurement of the reference gas present at instant (t) with the reference gas supply calibrated flow; and d) determining the permeation of the material (M) to said gas, from the measurement of the ta

Abstract: The invention relates to a method for measuring gases permeation through a material (M), comprising the steps of: Forming a mixture of isotopic gases in a mixing enclosure (14), each isotopic gas corresponding to a target gas for which permeation through the material (M) is sought, the isotopic gas having a mass number different from that of the corresponding target gas; Filling with the mixture of isotopic gases a first chamber (11) of a permeation enclosure (10) comprising first (11) and second (12) chambers, the first chamber (11) being separated from the second chamber (12) by the material (M); Simultaneously analyzing the isotopic gases having permeated through the material (M) and being present in the second chamber (12), in order to simultaneously calculate permeation through the material (M) of each of the corresponding target gases. The invention further relates to a device for implementing such a method, and a method for using this device.