Abstract: A transistor suited for use as an RF switch includes a semiconductor layer and a stack of a gate insulator layer and a conductive gate layer. A length of the conductive gate layer is smaller on the side of a lower surface, located in the vicinity of the gate insulator layer, and is greater on the side of an upper surface, opposite to the lower surface. Lateral sides of the conductive gate layer are covered, on a lower portion, with a first material and, on an upper portion, with a second material. The first material has a Young's modulus greater than a Young's modulus of the second material.

Abstract: An embodiment sensor includes a hybrid waveguide. The hybrid waveguide includes a first dielectric optical waveguide lying on and in contact with a dielectric support layer; a first surface waveguide optically coupled to the first dielectric optical waveguide, parallel to the first dielectric optical waveguide, and lying on the dielectric support layer. The first surface waveguide has a lateral surface configured to guide a surface mode. The hybrid waveguide includes a cavity intended to be filled with a dielectric fluid, separating laterally the first dielectric optical waveguide from the lateral surface of the first surface waveguide.

Abstract: The present description concerns a switch based on a phase-change material comprising: first, second, and third electrodes; a first region of said phase-change material coupling the first and second electrodes; and —a second region of said phase-change material coupling the second and third electrodes.

Abstract: A transistor includes a source region, a drain region and a body region arranged in a semiconductor layer. A gate region tops the body region. The body region includes a first doped layer and a second layer between the first doped layer and the gate region. The second layer is an epitaxial layer that is less heavily doped than the first doped layer.

Abstract: The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

Abstract: A MOSFET transistor includes, on a semiconductor layer, a stack of a gate insulator and of a gate region on the gate insulator. The gate region has a first gate portion and a second gate portion between the first gate portion and the gate insulator. The first gate portion has a first length in a first lateral direction of the transistor. The second gate portion has a second length in the first lateral direction that is shorter than the first length.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: A transistor includes a semiconductor layer with a stack of a gate insulator and a conductive gate on the semiconductor layer. A thickness of the gate insulator is variable in a length direction of the transistor. The gate insulator includes a first region having a first thickness below a central region of the conductive gate. The gate insulator further includes a second region having a second thickness, greater than the first thickness, below an edge region of conductive gate.

Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.

Abstract: The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

Abstract: A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

Abstract: The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

Abstract: A phase change filter is formed by an arrangement of dots, wherein each dot is made of a phase change material. A heating layer of electrically conductive material extends under the arrangement of dots. Current passing through the heating layer changes the dots between two states to alter attenuation of light passing through the filter.

Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

Abstract: A light sensor includes a first pixel and a second pixel. Each pixel has a photoconversion area. A band-stop Fano resonance filter is arranged over the first pixel. The second pixel includes no Fano resonance filter. Signals output from the first and second pixels are processed to determine information representative of the quantity of light received by the light sensor during an illumination phase in a rejection band of the band-stop Fano resonance filter.

Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

Abstract: A photosensitive semiconductor region is configured to be illuminated through a rear face. A periodic array of pads formed of a first material is provided at the front face. The periodic array has an outline with a periodic pattern parameterized by characteristic dimensions. The outline forms an interface between the first material and a second material, where the first and second materials have different optical indices. The characteristic dimensions of the periodic pattern are less than a wavelength of interest and are configured to produce at the interface a reflection of light at the wavelength of interest towards the photosensitive semiconductor region.

Abstract: An optical filter includes a carrier layer made of a first material. A periodic grating of posts is disposed on the carrier layer in a periodic pattern configured by characteristic dimensions. The posts are made of a second material. A layer made of a third material encompasses the periodic grating of posts and covers the carrier layer. The third material has a refractive index that is different from a refractive index of the second material. Characteristic dimensions of the periodic grating of posts are smaller than an interfering wavelength and are configured to selectively reflect light at the interfering wavelength on the periodic grating of posts.