Patents by Inventor Stéphanie Jacob

Stéphanie Jacob has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11921788
    Abstract: A system level search module receives system level search user interface registration information for an application of the computing device. The registration information includes an indication of how the system level search module can launch the application. The registration information is added to a registration store, and the application is included as one of one or more applications that can be searched using the system level search user interface.
    Type: Grant
    Filed: November 29, 2022
    Date of Patent: March 5, 2024
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Priya Vaidyanathan, Brian E. Uphoff, Brandon H. Paddock, Stephanie M. Monk, Dona Sarkar, Wentao Chen, Edward Boyle Averett, Manav Mishra, Derek S. Gebhard, Richard Jacob White, Yin Liu
  • Patent number: 8710494
    Abstract: The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: April 29, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Romain Gwoziecki, Mohamed Benwadih, Philippe Coronel, Stéphanie Jacob
  • Publication number: 20120199821
    Abstract: The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.
    Type: Application
    Filed: September 30, 2010
    Publication date: August 9, 2012
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Romain Gwoziecki, Mohamed Benwadih, Philippe Coronel, Stephanie Jacob