Patents by Inventor Stacey Cabral

Stacey Cabral has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Post metal chemical mechanical polishing dry cleaning
    Patent number: 7772113
    Abstract: Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconductor. An unintended metal short that may be present due to the residue may thereby be eliminated by adjusting the dry cleaning process based on a type of dry cleaning material, and type and a thickness of the residue.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: August 10, 2010
    Assignee: Qimonda AG
    Inventors: Heinrich Ollendorf, Stacey Cabral, Robert Fuller
  • POST METAL CHEMICAL MECHANICAL POLISHING DRY CLEANING
    Publication number: 20080092921
    Abstract: Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconductor. An unintended metal short that may be present due to the residue may thereby be eliminated by adjusting the dry cleaning process based on a type of dry cleaning material, and type and a thickness of the residue.
    Type: Application
    Filed: October 29, 2007
    Publication date: April 24, 2008
    Inventors: Heinrich Ollendorf, Stacey Cabral, Robert Fuller
  • Post metal chemical mechanical polishing dry cleaning
    Patent number: 7300875
    Abstract: Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconductor. An unintended metal short that may be present due to the residue may thereby be eliminated by adjusting the dry cleaning process based on a type of dry cleaning material, and type and a thickness of the residue.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: November 27, 2007
    Assignee: Infineon Technologies Richmond, LP
    Inventors: Heinrich Ollendorf, Stacey Cabral, Robert Fuller
  • Post metal chemical mechanical polishing dry cleaning
    Publication number: 20050227471
    Abstract: Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconductor. An unintended metal short that may be present due to the residue may thereby be eliminated by adjusting the dry cleaning process based on a type of dry cleaning material, and type and a thickness of the residue.
    Type: Application
    Filed: February 11, 2004
    Publication date: October 13, 2005
    Inventors: Heinrich Ollendorf, Stacey Cabral, Robert Fuller