Abstract: A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.

Abstract: A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the implantation dose is in a range from about 2×1013 cm?2 to about 12×1013 cm?2. Semiconductor devices are also presented.

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor device layer having silicon carbide and having an upper surface and a lower surface. The semiconductor device also includes a heavily doped body region formed in the upper surface of the semiconductor device layer. The semiconductor device further includes a gate stack formed adjacent to and on top of the upper surface of the semiconductor device layer, wherein the gate stack is not formed adjacent to the heavily doped body region.

Abstract: A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor device layer having silicon carbide and having an upper surface and a lower surface. The semiconductor device also includes a heavily doped body region formed in the upper surface of the semiconductor device layer. The semiconductor device further includes a gate stack formed adjacent to and on top of the upper surface of the semiconductor device layer, wherein the gate stack is not formed adjacent to the heavily doped body region.

Abstract: A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the implantation dose is in a range from about 2×1013 cm?2 to about 12×1013 cm?2. Semiconductor devices are also presented.

Abstract: A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.

Abstract: A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.

Abstract: A microfluidic device with a vertical injection aperture is provided. The microfluidic device comprises a separation channel, an injection aperture disposed adjacent to and in fluid communication with the separation channel. The microfluidic device further comprises a semi-permeable filter disposed adjacent to the injection aperture, wherein the filter is configured to preconcentrate a sample in the injection aperture to form a preconcentrated sample plug during an injection operation, and wherein the sample plug flows downwardly from the injection aperture to the separation channel during an electrophoresis operation.

Abstract: A high-temperature pressure sensor is provided. The sensor includes a quartz substrate with a cavity etched on one side. A reflective coating is deposited on at least a portion of the cavity. The sensor further includes a ferrule section coupled to the quartz substrate with the cavity therebetween. The cavity exists in a vacuum, and cavity gap is formed between the reflective metal coating and a surface of the ferrule. The sensor also includes an optical fiber enclosed by the ferrule section and extending from the cavity gap to an opposing end of the ferrule section and a metal casing surrounding the ferrule section and the quartz substrate with an opening for said optical fiber extending therefrom. The pressure applied to the quartz substrate changes the dimensions of the cavity gap and a reflected signal from the reflective coating is processed as a pressure.

Abstract: A low power preconcentrator for use in micro gas analysis, such as gas chromatography, and a system that employs the preconcentrator is disclosed. The preconcentrator includes a reservoir that comprises a heater membrane and elements coated at least partially with an adsorbent, and ports for receiving and discharging an analyte in communication with the reservoir. At least a portion of the reservoir (e.g., a cap) is made of a material having a thermal conductivity less than about 100 W/(m·K) and/or the heater membrane is made of a material that has a temperature difference less than about 75° C. when heated. The present invention has been described in terms of specific embodiment(s), and it is recognized that equivalents, alternatives, and modifications, aside from those expressly stated, are possible and within the scope of the appending claims.

Abstract: A high-temperature pressure sensor is provided. The sensor includes a quartz substrate with a cavity etched on one side. A reflective coating is deposited on at least a portion of the cavity. The sensor further includes a ferrule section coupled to the quartz substrate with the cavity therebetween. The cavity exists in a vacuum, and cavity gap is formed between the reflective metal coating and a surface of the ferrule. The sensor also includes an optical fiber enclosed by the ferrule section and extending from the cavity gap to an opposing end of the ferrule section and a metal casing surrounding the ferrule section and the quartz substrate with an opening for said optical fiber extending therefrom. The pressure applied to the quartz substrate changes the dimensions of the cavity gap and a reflected signal from the reflective coating is processed as a pressure.

Abstract: A method for making a testable sensor assembly is provided. The method includes forming a first sensor array on a first substrate having a first side and a second side, wherein the first sensor array is formed on the first side of the first substrate, coupling a first semiconductor wafer having a first side and a second side to the first sensor array, wherein the first side of the first semiconductor wafer is coupled to the first sensor array, thinning one of the second side of the first substrate or the second side of the first semiconductor wafer, and testing the first sensor array to identify operational and non-operational units in the testable sensor assembly before integration of the sensor assembly with interface electronics.

Abstract: A system and method for managing optical power for controlling thermal alteration of a sample undergoing spectroscopic analysis is provided. The system includes a moveable laser beam generator for irradiating the sample and a beam shaping device for moving and shaping the laser beam to prevent thermal overload or build up in the sample. The moveable laser beam generator includes at least one beam shaping device selected from the group consisting of at least one optical lens, at least one optical diffractor, at least one optical path difference modulator, at least one moveable mirror, at least one Micro-Electro-Mechanical Systems (MEMS) integrated circuit (IC), and/or a liquid droplet. The system also includes an at least two degree of freedom (2 DOF) moveable substrate platform and a controller for controlling the laser beam generator and the substrate platform, and for analyzing light reflected from the sample.

Abstract: A method for assembling a Fabry-Perot interferometer includes depositing a first metal layer on an end portion of a ferrule, depositing a second metal layer on a back portion of a die, placing the first metal layer and the second metal layer in contact with each other with respective first and second orifices aligned with respect to each other, and bonding the ferrule to the die by thermo compression. The resulting interferometer includes a glass die with a cavity, a silicon diaphragm disposed over the opening of the cavity and bonded to the glass die, a ferrule bonded to the glass die by thermo compression with the first and second orifices being aligned to each other, and an optical fiber inserted through the other end of the ferrule in direct contact to a back portion of the die and aligned with the first orifice.

Abstract: A method for making a testable sensor assembly is provided. The method includes forming a first sensor array on a first substrate having a first side and a second side, wherein the first sensor array is formed on the first side of the first substrate, coupling a first semiconductor wafer having a first side and a second side to the first sensor array, wherein the first side of the first semiconductor wafer is coupled to the first sensor array, thinning one of the second side of the first substrate or the second side of the first semiconductor wafer, and testing the first sensor array to identify operational and non-operational units in the testable sensor assembly before integration of the sensor assembly with interface electronics.

Abstract: A microfluidic device with a vertical injection aperture is provided. The microfluidic device comprises a separation channel, an injection aperture disposed adjacent to and in fluid communication with the separation channel. The microfluidic device further comprises a semi-permeable filter disposed adjacent to the injection aperture, wherein the filter is configured to preconcentrate a sample in the injection aperture to form a preconcentrated sample plug during an injection operation, and wherein the sample plug flows downwardly from the injection aperture to the separation channel during an electrophoresis operation.

Abstract: An integrated spectrometer instrument, including an optical source formed on a chip, the optical source configured to generate an incident optical beam upon a sample to be measured. Collection optics formed on the chip are configured to receive a scattered optical beam from the sample, and filtering optics formed on the chip are configured to remove elastically scattered light from the scattered optical beam at a wavelength corresponding to the optical source. A tunable filter formed on the chip is configured to pass selected wavelengths of the scattered optical beam, and a photo detector device formed on the chip is configured to generate an output signal corresponding to the intensity of photons passed through the tunable filter.

Abstract: The present invention relates to a method for making an integrated sensor comprising providing a sensor array fabricated on a top surface of a bulk silicon wafer having a top surface and a bottom surface, and comprising a plurality of sensors fabricated on the top surface of the bulk silicon wafer. The method further comprises coupling an SOI wafer to the top surface of the bulk silicon wafer, thinning the back surface of the bulk silicon wafer, coupling a plurality of integrated circuit die to the back surface of the bulk silicon wafer, and removing the SOI wafer from the top surface of the bulk silicon wafer.

Abstract: A system and method for managing optical power for controlling thermal alteration of a sample undergoing spectroscopic analysis is provided. The system includes a moveable laser beam generator for irradiating the sample and a beam shaping device for moving and shaping the laser beam to prevent thermal overload or build up in the sample. The moveable laser beam generator includes at least one beam shaping device selected from the group consisting of at least one optical lens, at least one optical diffractor, at least one optical path difference modulator, at least one moveable mirror, at least one Micro-Electro-Mechanical Systems (MEMS) integrated circuit (IC), and/or a liquid droplet. The system also includes an at least two degree of freedom (2 DOF) moveable substrate platform and a controller for controlling the laser beam generator and the substrate platform, and for analyzing light reflected from the sample.