Abstract: Various arrangements for performing transmodulation of a forward feeder link are presented. A first data stream and a second data stream can be modulated into a higher-order modulation forward feeder link having a higher-order digital modulation scheme. A satellite can receive the higher-order modulation forward feeder link. The satellite can demodulate the higher-order modulator forward feeder link into a bit stream. This bit stream may then be remodulated and retransmitted as multiple forward user links.

Abstract: A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

Abstract: A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.

Abstract: A method includes forming a work function metal layer over first and second semiconductor fins extending upward from a substrate; forming a sacrificial layer straddling the first semiconductor fin but not overlapping the second semiconductor fin; patterning the first work function metal layer using the sacrificial layer, resulting in a patterned work function metal layer under the sacrificial layer, and a work function metal residue in the vicinity of the second semiconductor fin; selectively forming a protective layer on a side surface of the sacrificial layer and a side surface of the patterned first work function metal layer; removing the work function metal residue after selectively forming the protective layer; after removing the work function metal residue, removing the sacrificial layer and the protective layer; and forming a second work function metal layer over the first and second semiconductor fins.

Abstract: A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.

Abstract: A method includes forming a work function metal layer over first and second semiconductor fins extending upward from a substrate; forming a sacrificial layer straddling the first semiconductor fin but not overlapping the second semiconductor fin; patterning the first work function metal layer using the sacrificial layer, resulting in a patterned work function metal layer under the sacrificial layer, and a work function metal residue in the vicinity of the second semiconductor fin; selectively forming a protective layer on a side surface of the sacrificial layer and a side surface of the patterned first work function metal layer; removing the work function metal residue after selectively forming the protective layer; after removing the work function metal residue, removing the sacrificial layer and the protective layer; and forming a second work function metal layer over the first and second semiconductor fins.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

Abstract: A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.

Abstract: A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

Abstract: A magazine well funnel assembly is an integrated design including a mainspring housing portion and a funnel well portion attached to a firearm. The magazine well funnel assembly includes a set of funnel walls arranged to form an aperture shaped to accept a magazine and is bounded by a funnel rim on a side of the set of funnel walls opposite a plane of the aperture. The funnel rim is shaped in an arc on a side of the set of funnel walls adjacent to the rear funnel wall portion to increase the surface area of the funnel. A method of modification includes drilling a relocated pin hole in the firearm frame and inserting the magazine well funnel assembly therein. A base section of the firearm frame may be removed to preserve the same vertical length of the firearm compared to before the magazine well funnel assembly was installed.

Abstract: A structure and a method of forming are provided. A first work function layer is formed over a first fin and terminates closer to the first fin than an adjacent second fin. A second work function layer is formed over the first work function layer and terminates closer to the second fin than the adjacent second fin. A third work function layer is formed over the first work function layer and the second fin. A conductive layer is formed over the third work function layer.

Abstract: A magazine well funnel assembly is an integrated design including a mainspring housing portion and a funnel well portion attached to a firearm. The magazine well funnel assembly includes a set of funnel walls arranged to form an aperture shaped to accept a magazine and is bounded by a funnel rim on a side of the set of funnel walls opposite a plane of the aperture. The funnel rim is shaped in an arc on a side of the set of funnel walls adjacent to the rear funnel wall portion to increase the surface area of the funnel. A method of modification includes drilling a relocated pin hole in the firearm frame and inserting the magazine well funnel assembly therein. A base section of the firearm frame may be removed to preserve the same vertical length of the firearm compared to before the magazine well funnel assembly was installed.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.