Patents by Inventor Stanislav S. Todorov
Stanislav S. Todorov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11830739Abstract: Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than ?50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.Type: GrantFiled: October 7, 2020Date of Patent: November 28, 2023Assignee: Applied Materials, Inc.Inventors: Hans-Joachim L. Gossmann, Stanislav S. Todorov, Hiroyuki Ito
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Publication number: 20230287561Abstract: A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The spinning disk rotates about a central axis. The spinning disk is also translated linearly in a directional perpendicular to the central axis. The spot ion beam strikes the spinning disk at a distance from the central axis, referred to as the radius of impact. The rotation rate and the scan velocity may both vary inversely with the radius of impact.Type: ApplicationFiled: March 14, 2022Publication date: September 14, 2023Inventors: Stanislav S. Todorov, Robert J. Mitchell, Joseph C. Olson, Frank Sinclair
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Publication number: 20230016122Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.Type: ApplicationFiled: December 23, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Alexander K. Eidukonis, Hans-Joachim L. Gossmann, Dennis Rodier, Stanislav S. Todorov, Richard White, Wei Zhao, Wei Zou, Supakit Charnvanichborikarn
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Publication number: 20220108893Abstract: Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than ?50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.Type: ApplicationFiled: October 7, 2020Publication date: April 7, 2022Applicant: Applied Materials, Inc.Inventors: Hans-Joachim L. Gossmann, Stanislav S. Todorov, Hiroyuki Ito
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Patent number: 10658156Abstract: A system and method for generating a plurality of scan profiles based on a desired implant pattern and the uniformity of the spot beam is disclosed. The system scans the spot beam and records the number of ions as a function of position. This is referred to as the linear uniformity array. The desired implant pattern and the linear uniformity array are then combined to generate a composite pattern array. This array contemplates the non-uniformity of the scanned beam and allows the system to create scan profiles that compensate for this. The software may be executed on the controller disposed in the implantation system, or may be executed on a different computing device.Type: GrantFiled: February 1, 2019Date of Patent: May 19, 2020Assignee: Applied Materials, Inc.Inventors: Stanislav S. Todorov, Jeffrey Morse, John Sawyer
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Patent number: 10081861Abstract: Methods for the selective processing of the outer portion of a workpiece are disclosed. The outer portion is processed by directing an ion beam toward the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two locations. The workpiece is then rotated relative to the ion beam about the center so that all regions of the outer portion are exposed to the ion beam. The workpiece may be rotated an integral number of rotations. The ion beam may perform any process, such as ion implantation, etching or deposition. The outer portion may be an annular ring having an outer diameter equal to that of the workpiece and having a width of 1 to 30 millimeters. The rotation of the workpiece may be aligned with a notch on the outer edge of the workpiece.Type: GrantFiled: April 8, 2015Date of Patent: September 25, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Morgan D. Evans, Daniel Distaso, Stanislav S. Todorov, Mark R. Amato, William Davis Lee, Jillian Reno
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Patent number: 9738968Abstract: An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.Type: GrantFiled: April 18, 2016Date of Patent: August 22, 2017Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: George M. Gammel, Morgan D. Evans, Stanislav S. Todorov, Norman E. Hussey, Gregory R. Gibilaro
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Publication number: 20160312357Abstract: An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.Type: ApplicationFiled: April 18, 2016Publication date: October 27, 2016Inventors: George M. Gammel, Morgan D. Evans, Stanislav S. Todorov, Norman E. Hussey, Gregory R. Gibilaro
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Publication number: 20160298229Abstract: Methods for the selective processing of the outer portion of a workpiece are disclosed. The outer portion is processed by directing an ion beam toward the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two locations. The workpiece is then rotated relative to the ion beam about the center so that all regions of the outer portion are exposed to the ion beam. The workpiece may be rotated an integral number of rotations. The ion beam may perform any process, such as ion implantation, etching or deposition. The outer portion may be an annular ring having an outer diameter equal to that of the workpiece and having a width of 1 to 30 millimeters. The rotation of the workpiece may be aligned with a notch on the outer edge of the workpiece.Type: ApplicationFiled: April 8, 2015Publication date: October 13, 2016Inventors: Morgan D. Evans, Daniel Distaso, Stanislav S. Todorov, Mark R. Amato, William Davis Lee, Jillian Reno
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Patent number: 9299564Abstract: Various methods for implanting dopant ions into a three dimensional feature of a semiconductor wafer are disclosed. The implant temperature may be varied to insure that the three dimensional feature, after implant, has a crystalline inner core, which is surrounded by an amorphized surface layer. The crystalline core provides a template from which the crystalline structure for the rest of the feature can be regrown. In some embodiments, the implant energy and the implant temperature may each be modified to achieve the desired crystalline inner core with the surrounding amorphized surface layer.Type: GrantFiled: May 20, 2013Date of Patent: March 29, 2016Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Andrew M. Waite, Stanislav S. Todorov
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Patent number: 9006692Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.Type: GrantFiled: September 25, 2013Date of Patent: April 14, 2015Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Stanislav S. Todorov, George M. Gammel, Richard Allen Sprenkle, Norman E. Hussey, Frank Sinclair, Shengwu Chang, Joseph C. Olson, David Roger Timberlake, Kurt T. Decker-Lucke
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Publication number: 20140326179Abstract: A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.Type: ApplicationFiled: September 25, 2013Publication date: November 6, 2014Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Stanislav S. Todorov, George M. Gammel, Richard Allen Sprenkle, Norman E. Hussey, Frank Sinclair, Shengwu Chang, Joseph C. Olson, David Roger Timberlake, Kurt T. Decker-Lucke
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Patent number: 8853653Abstract: A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.Type: GrantFiled: September 25, 2013Date of Patent: October 7, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Stanislav S. Todorov, George M. Gammel, Richard Allen Sprenkle, Norman E. Hussey, Frank Sinclair, Shengwu Chang, Joseph C. Olson, David Roger Timberlake, Kurt T. Decker-Lucke
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Publication number: 20140162435Abstract: Various methods for implanting dopant ions into a three dimensional feature of a semiconductor wafer are disclosed. The implant temperature may be varied to insure that the three dimensional feature, after implant, has a crystalline inner core, which is surrounded by an amorphized surface layer. The crystalline core provides a template from which the crystalline structure for the rest of the feature can be regrown. In some embodiments, the implant energy and the implant temperature may each be modified to achieve the desired crystalline inner core with the surrounding amorphized surface layer.Type: ApplicationFiled: May 20, 2013Publication date: June 12, 2014Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Andrew M. Waite, Stanislav S. Todorov
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Patent number: 8722431Abstract: A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.Type: GrantFiled: March 22, 2012Date of Patent: May 13, 2014Inventors: Nilay Anil Pradhan, Stanislav S. Todorov, Kurt Decker-Lucke, Klaus Petry, Benjamin Colombeau, Baonian Guo
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Publication number: 20130252349Abstract: A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.Type: ApplicationFiled: March 22, 2012Publication date: September 26, 2013Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Nilay Anil Pradhan, Stanislav S. Todorov, Kurt Decker-Lucke, Klaus Petry, Benjamin Colombeau, Baonian Guo
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Patent number: 7413596Abstract: The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the freezing point of the liquid for sufficient time to substantially, if not completely, turn the liquid into a solid. Concurrent with or subsequent to the cooling of the liquid, the interior of the vessel is subjected to a vacuum so as to evacuate all or substantially all of the gaseous atmosphere. Thereafter, the vessel is heated to a temperature above the melting point of the liquid, allowing the frozen material to return to its liquid form or sublimate to form a vapor.Type: GrantFiled: November 5, 2004Date of Patent: August 19, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Wilhelm P. Platow, John B. Cracchiolo, Stanislav S. Todorov, Jaime M. Reyes
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Patent number: 7397049Abstract: A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.Type: GrantFiled: March 22, 2006Date of Patent: July 8, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Raymond Callahan, David Olson, Wilhelm P. Platow, Stanislav S. Todorov
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Publication number: 20070221871Abstract: A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.Type: ApplicationFiled: March 22, 2006Publication date: September 27, 2007Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Raymond Callahan, David Olson, Wilhelm P. Platow, Stanislav S. Todorov