Abstract: Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention employs certain doping elements to provide inter-band-gap energy levels in combination with optical or current-injection pumping. The doping element, preferably a noble metal and most preferably Gold, is chosen to provide an energy level which enables an energy transition corresponding to a photon of wavelength equal to the signal wavelength to be amplified. The energy transition may be finely “adjusted” by use of standard doping techniques (such as n-type or p-type doping) to alter the conduction and valence band energy levels and thereby also the magnitude of the energy transition. A second aspect of the invention relates to the use of a non-homogeneous heat distribution which has been found to lead to optical amplification effects.

Abstract: Waveguide(s) (130) including at least partially buried channels) (120) within substrate(s) (100) having at least one substantially planar surface (110) are disclosed. According to some embodiments at least part of the channel (120) is located beneath at least a portion of the substrate (100). According to some embodiments the waveguide channel (120) includes a substantially transparent core (140) and optional cladding (160) extending through the channel (120). Alternately, an inner surface of the channel (120) is highly reflective. Furthermore, structures for use as waveguides (130) and/or as microchannels for fluid flow are disclosed herein. Also disclosed are production methods for such waveguides and said structures (130) and said structures, and methods of using such waveguides (130).

Abstract: Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention employs certain doping elements to provide inter-band-gap energy levels in combination with optical or current-injection pumping. The doping element, preferably a noble metal and most preferably Gold, is chosen to provide an energy level which enables an energy transition corresponding to a photon of wavelength equal to the signal wavelength to be amplified. The energy transition may be finely “adjusted” by use of standard doping techniques (such as n-type or p-type doping) to alter the conduction and valence band energy levels and thereby also the magnitude of the energy transition. A second aspect of the invention relates to the use of a non-homogeneous heat distribution which has been found to lead to optical amplification effects.

Abstract: Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention employs certain doping elements to provide inter-band-gap energy levels in combination with optical or current-injection pumping—The doping element, preferably a noble metal and most preferably Gold, is chosen to provide an energy level which enables an energy transition corresponding to a photon of wavelength equal to the signal wavelength to be amplified. The energy transition may be finely “adjusted” by use of standard doping techniques (such as n-type or p-type doping) to alter the conduction and valence band energy levels and thereby also the magnitude of the energy transition. A second aspect of the invention relates to the use of a non-homogeneous heat distribution which has been found to lead to optical amplification effects.

Abstract: Waveguide(s) (130) including at least partially buried channels) (120) within substrate(s) (100) having at least one substantially planar surface (110) are disclosed. According to some embodiments at least part of the channel (120) is located beneath at least a portion of the substrate (100). According to some embodiments the waveguide channel (120) includes a substantially transparent core (140) and optional cladding (160) extending through the channel (120). Alternately, an inner surface of the channel (120) is highly reflective. Furthermore, structures for use as waveguides (130) and/or as microchannels for fluid flow are disclosed herein. Also disclosed are production methods for such waveguides and said structures (130) and said structures, and methods of using such waveguides (130).

Abstract: Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention employs certain doping elements to provide inter-band-gap energy levels in combination with optical or current-injection pumping—The doping element, preferably a noble metal and most preferably Gold, is chosen to provide an energy level which enables an energy transition corresponding to a photon of wavelength equal to the signal wavelength to be amplified. The energy transition may be finely “adjusted” by use of standard doping techniques (such as n-type or p-type doping) to alter the conduction and valence band energy levels and thereby also the magnitude of the energy transition. A second aspect of the invention relates to the use of a non-homogeneous heat distribution which has been found to lead to optical amplification effects.