Abstract: A method of treating a CMOS device. The method may include providing a first stress liner on a transistor of a first dopant type in the CMOS device. The method may further include exposing the CMOS device to first ions in a first exposure, the first ions configured to reduce contact resistance in a source/drain region of a transistor of a second dopant type.

Abstract: A method of modifying a shape of a cavity in a substrate. The method includes forming one or more cavities on a surface of the substrate between adjacent relief structures. The method also includes directing ions toward the substrate at a non-normal angle of incidence, wherein the ions strike an upper portion of a cavity sidewall, and wherein the ions do not strike a lower portion of the cavity sidewall. The method further includes etching the one or more cavities wherein the upper portion of a cavity sidewall etches more slowly than the lower portion of the sidewall cavity.

Abstract: A method of treating a CMOS device. The method may include providing a first stress liner on a transistor of a first dopant type in the CMOS device. The method may further include exposing the CMOS device to first ions in a first exposure, the first ions configured to reduce contact resistance in a source/drain region of a transistor of a second dopant type.

Abstract: A method of modifying a shape of a cavity in a substrate. The method includes forming one or more cavities on a surface of the substrate between adjacent relief structures. The method also includes directing ions toward the substrate at a non-normal angle of incidence, wherein the ions strike an upper portion of a cavity sidewall, and wherein the ions do not strike a lower portion of the cavity sidewall. The method further includes etching the one or more cavities wherein the upper portion of a cavity sidewall etches more slowly than the lower portion of the sidewall cavity.

Abstract: The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the freezing point of the liquid for sufficient time to substantially, if not completely, turn the liquid into a solid. Concurrent with or subsequent to the cooling of the liquid, the interior of the vessel is subjected to a vacuum so as to evacuate all or substantially all of the gaseous atmosphere. Thereafter, the vessel is heated to a temperature above the melting point of the liquid, allowing the frozen material to return to its liquid form or sublimate to form a vapor.