Abstract: This application relates to semiconductor die including: a transistor device formed in an active area of a semiconductor body and having a channel region, a gate region, and a field electrode region, the gate region arranged laterally aside the channel region and having a gate electrode for controlling a current flow in the channel region, the gate electrode formed in a gate trench extending into the semiconductor body; and an additional device formed in an additional device area of the semiconductor body. A recess extends into the semiconductor body in the additional device area, and a semiconductor material is arranged in the recess in which the additional device is formed.

Abstract: In an embodiment, a semiconductor device is provided that includes a semiconductor die having a front side, a rear side opposing the front side, and side faces, a first transistor device having a first source pad and a first gate pad on the front side, and a second transistor device having a second source pad and a second gate pad on the front side. The first and second transistor devices each have a drain that is electrically coupled to a common drain pad on the rear side of the semiconductor die. The drain pad has an upper surface and side faces and at least a central portion of the upper surface is covered by a first electrically insulating layer.

Abstract: The application relates to a semiconductor power device including a semiconductor body in which a transistor device is formed, the transistor device having a gate region and a channel region laterally aside the gate region, the gate region including a gate electrode for controlling a channel formation in the channel region, and a gate dielectric laterally between the channel region and the gate electrode. The gate electrode includes a gate electrode bulk region and a gate electrode layer laterally between the gate dielectric and the gate electrode bulk region. The gate electrode layer is made of a doped metallically conductive material.

Abstract: This application relates to semiconductor die including: a transistor device formed in an active area of a semiconductor body and having a channel region, a gate region, and a field electrode region, the gate region arranged laterally aside the channel region and having a gate electrode for controlling a current flow in the channel region, the gate electrode formed in a gate trench extending into the semiconductor body; and an additional device formed in an additional device area of the semiconductor body. A recess extends into the semiconductor body in the additional device area, and a semiconductor material is arranged in the recess in which the additional device is formed.