Abstract: Embodiments of a substrate are provided herein, which include: a first metal plane and a second metal plane in a first metal layer, the first and second metal planes laterally separated by a first gap of dielectric material; and a third metal plane and a fourth metal plane in a second metal layer vertically adjacent to the first metal layer, the third and fourth metal planes laterally separated by a second gap of dielectric material, wherein the second gap comprises a first laterally-shifted gap portion and a second laterally-shifted gap portion, the first laterally-shifted gap portion is laterally offset from a vertical footprint of the first gap in a first lateral direction, and the second laterally-shifted gap portion is laterally offset from the vertical footprint of the first gap in a second lateral direction opposite the first lateral direction.

Abstract: A semiconductor device includes a package substrate, a semiconductor die attached to a first major surface of the package substrate, and a plurality of wire bonds attached between the semiconductor die and the first major surface of the package substrate. The device further includes a conductive plate over the semiconductor die, plurality of wire bonds, and package substrate wherein a first major surface of the conductive plate faces the first major surface of the package substrate. The device further includes a plurality of conductive extensions attached to the first major surface of the conductive plate, wherein each conductive extension extends from the first major surface of the conductive plate and between two adjacent wire bonds of the plurality of wire bonds.

Abstract: A stacked monitor structure and method of measuring thicknesses of embedded layers in a build-up substrate is provided. The stacked monitor structure includes a multi-layer substrate having a first shape formed in a first conductive layer of the multi-layer substrate and a second shape formed in a second conductive layer of the multi-layer substrate, a region of the second shape overlapping the first shape. A first dielectric layer is disposed between the first conductive layer and the second conductive layer. A measuring device is configured to measure a thickness of the first conductive layer at a first location on the stacked monitor structure, a thickness of the second conductive layer at a second location on the stacked monitor structure, and a combined thickness of the first conductive layer, the second conductive layer, and the first dielectric layer at a third location on the stacked monitor structure.

Abstract: A stacked monitor structure and method of measuring thicknesses of embedded layers in a build-up substrate is provided. The stacked monitor structure includes a multi-layer substrate having a first shape formed in a first conductive layer of the multi-layer substrate and a second shape formed in a second conductive layer of the multi-layer substrate, a region of the second shape overlapping the first shape. A first dielectric layer is disposed between the first conductive layer and the second conductive layer. A measuring device is configured to measure a thickness of the first conductive layer at a first location on the stacked monitor structure, a thickness of the second conductive layer at a second location on the stacked monitor structure, and a combined thickness of the first conductive layer, the second conductive layer, and the first dielectric layer at a third location on the stacked monitor structure.