Abstract: A sensor device, a sensor package, and method for fabricating a sensor device are described that include an integrated light blocker disposed on the thermopile device and a lens configured to direct light to the thermopile device. In an implementation, the thermopile device includes a substrate; a thermopile membrane disposed on the substrate, the thermopile membrane including at least one passivation layer; a thermopile disposed within the thermopile membrane, the thermopile including at least one thermocouple; and a light blocking layer disposed proximate to the thermopile membrane, the light blocking layer including an aperture disposed proximate to the thermopile.

Abstract: A sensor package having a thermopile sensor and a reference thermopile sensor disposed therein. In one or more implementations, the sensor package includes a substrate, a thermopile sensor disposed over the substrate, a reference thermopile sensor disposed over the substrate, and a lid assembly disposed over the thermopile sensor and the reference thermopile sensor. The lid assembly includes a transparent structure that passes electromagnetic radiation occurring in a limited spectrum of wavelengths and an electromagnetic blocker disposed over the lid assembly. The electromagnetic blocker defines an aperture over the thermopile sensor such that at least a portion of the electromagnetic blocker is positioned over the reference thermopile sensor. The electromagnetic blocker is configured to at least substantially block the electromagnetic radiation occurring in a limited spectrum of wavelengths from reaching the reference thermopile sensor.

Abstract: A sensor device, a sensor package, and method for fabricating a sensor device are described that include an integrated light blocker disposed on the thermopile device and a lens configured to direct light to the thermopile device. In an implementation, the thermopile device includes a substrate; a thermopile membrane disposed on the substrate, the thermopile membrane including at least one passivation layer; a thermopile disposed within the thermopile membrane, the thermopile including at least one thermocouple; and a light blocking layer disposed proximate to the thermopile membrane, the light blocking layer including an aperture disposed proximate to the thermopile.

Abstract: Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic.

Abstract: A sensor package having a thermopile sensor and a reference thermopile sensor disposed therein. In one or more implementations, the sensor package includes a substrate, a thermopile sensor disposed over the substrate, a reference thermopile sensor disposed over the substrate, and a lid assembly disposed over the thermopile sensor and the reference thermopile sensor. The lid assembly includes a transparent structure that passes electromagnetic radiation occurring in a limited spectrum of wavelengths and an electromagnetic blocker disposed over the lid assembly. The electromagnetic blocker defines an aperture over the thermopile sensor such that at least a portion of the electromagnetic blocker is positioned over the reference thermopile sensor. The electromagnetic blocker is configured to at least substantially block the electromagnetic radiation occurring in a limited spectrum of wavelengths from reaching the reference thermopile sensor.

Abstract: Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic.

Abstract: Techniques are described to furnish a light sensor that includes a patterned IR interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR interference filter configured to block infrared light is disposed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors.

Abstract: Techniques are described to furnish a light sensor that includes a patterned IR interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR interference filter configured to block infrared light is disposed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors.

Abstract: Techniques are described to furnish a light sensor that includes a patterned IR interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR interference filter configured to block infrared light is disposed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors.

Abstract: Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.

Abstract: Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.

Abstract: A computer-implemented method, apparatus, and computer program product are disclosed for securing node port access in a switched-fabric storage area network. Permitted combinations of fabric port identifiers and node port identifiers are specified. A node port receives a request to access the node port. A node port identifier, which identifies the device that is attempting to access the node port, is determined from the request. A fabric port identifier is determined that identifies a fabric port through which the device transmitted the request. Access to the node port is granted if the fabric port identifier and node port identifier form a permitted combination.

Abstract: The instant invention provides for canthine analogs that inhibit Akt activity. In particular, the compounds disclosed selectively inhibit one or two of the Akt isoforms. The invention also provides for compositions comprising such inhibitory compounds and methods of inhibiting Akt activity by administering the compound to a patient in need of treatment of cancer.

Abstract: The present invention is directed to a method of treating cancer which comprises administration of a compound which selectively inhibits the activity of one or two of the isoforms of Akt, a serine/threonine protein kinase. The invention is particularly directed to the method wherein the compound is dependent on the presence of the pleckstrin homology domain of Akt for its inhibitory activity.

Abstract: The present invention is directed to compounds comprising a triazolo[4,3-b]pyridazine moiety which inhibit the activity of Akt, a serine/threonine protein kinase. The invention is further directed to chemotherapeutic compositions containing the compounds of this invention and methods for treating cancer comprising administration of the compounds of the invention.

Abstract: A method and system for authenticating access to a storage area network (SAN) is disclosed in which a password is retrieved from a first copy of a password table in response to an access (login) request, the first copy of the password table residing on a switch and corresponding to a switch port. The password is used to retrieve a response from the first copy of the password table. The response is encrypted according to a first copy of an encryption key stored on the switch. The encrypted password is then sent to the node requesting access to the SAN, where it is decrypted according to a second copy of the encryption key residing on the node. The decrypted password is used to retrieve a response from a second copy of the password table residing on the node. The response is encrypted according to the second copy of the encryption key and sent back to the switch port. The response received from the node is then compared with the response determined from the first copy of the password table.

Abstract: A method and system for problem determination and fault isolation in a storage area network (SAN) is provided. A complex configuration of multi-vendor host systems, FC switches, and storage peripherals are connected in a SAN via a communications architecture (CA). A communications architecture element (CAE) is a network-connected device that has successfully registered with a communications architecture manager (CAM) on a host computer via a network service protocol, and the CAM contains problem determination (PD) functionality for the SAN and maintains a SAN PD information table (SPDIT). The CA comprises all network-connected elements capable of communicating information stored in the SPDIT. The CAM uses a SAN topology map and the SPDIT are used to create a SAN diagnostic table (SDT). A failing component in a particular device may generate errors that cause devices along the same network connection path to generate errors.