Abstract: An electrical module and a method of producing such an electrical module are disclosed. The electrical module includes: a ceramic circuit carrier, an electrical component arranged on the ceramic circuit carrier, and a substrate having a potting material, wherein the ceramic circuit carrier and the electrical component are arranged in the substrate. The electrical module has an upper side that forms electrical contact areas. and stepped metal structures arranged on the upper side of the electrical module. Each metal structure has regions of different thickness. The metal structures form on their upper side in each case one of the electrical contact areas of the electrical module and contact on their underside in a region of increased thickness in each case one of the electrical contacts on the upper side of the electrical component.

Abstract: An electrical module and a circuit board arrangement including an electrical module are disclosed. The electrical module includes an upper side and an underside, the upper side having four rectangularly arranged side edges, an electrical component embedded in the electrical module, and at least three electrical solder pads formed on the upper side configured to make electrical contact with the electrical component and configured to come into contact with an associated electrical solder pad of a circuit board via a solder layer. The solder pads of the electrical module are arranged in a symmetrical arrangement on the upper side of the electrical module, and/or the solder pads are arranged axially symmetrically on the upper side of the electrical module, and/or the solder pads extend along two opposite side edges on the upper side of the electrical module.

Abstract: A method for producing a circuit board arrangement includes: providing a first board in which electrical components and electrical contacts assigned thereto are integrated and include upper first contact surfaces and lower second contact surfaces; providing a second board in which ceramic substrates are integrated and include upper third contact surfaces; providing a multi-layered circuit board that forms lower fourth contact surfaces; simultaneously connecting the upper side of the first board to the lower side of the circuit board and the upper side of the second board to the lower side of the first board, wherein the upper first contact surfaces of the first board are connected to the lower fourth contact surfaces of the circuit board by a first sintering layer, and the lower second contact surfaces of the first board are connected to the upper third contact surfaces of the second board by a second sintering layer.

Abstract: A circuit board arrangement includes a circuit board having an upper side and an underside, and an electrical module having an upper side and an underside. The upper side of the electrical module is arranged on the underside of the circuit board. The electrical module includes a solder pad that is in electrical contact via a solder layer with an associated solder pad of the circuit board. The electrical module includes a metallization layer located at a distance from the upper side, an electrical component that is arranged on the metallization layer and is electrically connected thereto, and at least one via extending from the solder pad on the upper side of the electrical module up to the metallization layer. A solder resist is partially arranged on the solder pad such that the at least one via, applied to the solder pad, is shielded from the solder.

Abstract: A device includes a circuit carrier board and a conductor element that is configured to transfer an electric current from and/or to the circuit carrier board. The device includes an electrically conductive, elastically deformable, contoured, plate-like connection element that connects the circuit carrier board to the conductor element and is configured to create a local, dynamic resilience. As a result of this, a force transmission front the conductor element to the circuit carrier board may be reduced. A plate thickness of the connection element is at least 2 cm. A power converter and an aircraft having such a device are also provided.

Abstract: A power electronics converter includes a carrier substrate, and a converter commutation cell including a power circuit. The power circuit includes a power semiconductor switching element included in a power semiconductor prepackage. The power semiconductor prepackage includes a power semiconductor switching element and an electrical connection extending from a terminal of the power semiconductor switching element to an electrical connection side of the power semiconductor prepackage. The power electronics converter includes a heat sink arranged to remove heat from the power semiconductor prepackage, a thermal interface layer arranged between the heat removal side of the power semiconductor prepackage and the heat sink, and an electrical isolation layer arranged between the power semiconductor switching element and the heat sink. A product of a thermal conductivity of the thermal interface layer and a breakdown electric field strength of the electrical isolation layer is greater than or equal to 5 MVW/m2K.

Abstract: A power electronics converter includes a multi-layer planar carrier substrate having a plurality of electrically conductive layers, at least one electrical connection, and a converter commutation cell comprising a power circuit and a gate driver circuit. The power circuit includes at least one power semiconductor switching element and at least one capacitor. Each power semiconductor switching element is included in a power semiconductor prepackage having one or more power semiconductor switching elements embedded in a solid insulating material. The power electronics converter includes a heat sink configured to remove heat from the power semiconductor prepackage. A converter parameter ? is greater than or 20 equal to 100 kW/m3K, ? being defined as a heat transfer coefficient between the heat removal side of the power semiconductor prepackage and a cooling medium of the heat sink divided by the size of a gap between the power semiconductor prepackage and the heat sink.

Abstract: A power electronics converter includes a carrier substrate, and a converter commutation cell including a power circuit. The power circuit includes a power semiconductor switching element included in a power semiconductor prepackage. The power semiconductor prepackage includes a power semiconductor switching element and an electrical connection extending from a terminal of the power semiconductor switching element to an electrical connection side of the power semiconductor prepackage. The power electronics converter includes a heat sink arranged to remove heat from the power semiconductor prepackage, a thermal interface layer arranged between the heat removal side of the power semiconductor prepackage and the heat sink, and an electrical isolation layer arranged between the power semiconductor switching element and the heat sink. A product of a thermal conductivity of the thermal interface layer and a breakdown electric field strength of the electrical isolation layer is greater than or equal to 5 MVW/m2K.

Abstract: A circuit board arrangement includes a circuit board that has an upper side and an underside, at least one electrical component that is arranged on the underside of the circuit board, and a heat sink that has a cavity, into which the electrical component projects. In this case, the circuit board lies on the cavity and covers the cavity. The cavity of the heat sink is sealed such that neither particles nor a fluid may escape from or enter the cavity between the circuit board and the heat sink.

Abstract: A power electronics converter includes a multi-layer planar carrier substrate, and a converter commutation cell including a power circuit. The power circuit includes at least one power semiconductor switching element, each of which is comprised in a power semiconductor prepackage. Each power semiconductor prepackage includes one or more power semiconductor switching elements embedded in a solid insulating material. A heat sink is arranged to remove heat from the respective power semiconductor prepackage. A thermal interface layer is arranged between a heat removal side of the respective power semiconductor prepackage and the heat sink. The thermal interface layer has a thermal conductivity and a mechanical compressibility. A converter parameter, which is defined as the mechanical compressibility of the thermal interface layer divided by the thermal conductivity of the thermal interface layer, satisfies 0.1 MNK/Wm<?<1 GNK/Wm.

Abstract: A power electronics converter includes a substrate and a converter commutation cell including a power circuit. The power circuit includes at least one power semiconductor switching element and at least one capacitor. Each power semiconductor switching element is comprised in a power semiconductor prepackage. An electrical connection side of the respective power semiconductor prepackage is spaced apart in a z direction from the substrate so as to define a prepackage gap between the substrate and the electrical connection side. At least a portion of the prepackage gap is filled with an electrically insulating material having voids. A converter parameter ? defined as an insulation fill factor divided by a maximum void size is greater than or equal to 10/mm. The insulation fill factor is defined as a cumulated volume of the voids subtracted from a volume of the electrically insulating material divided by the volume of the electrically insulating material.

Abstract: A method of designing and manufacturing a power electronics converter for an electrical power system is provided. A circuit design for the power electronics converter is selected. A shape constraint for integrating the power electronics converter into the electrical power system is determined, and at least one multi-layer carrier substrate is obtained according to the determined shape constraint. A plurality of power semiconductor prepackages are obtained. Each power semiconductor prepackage includes a power semiconductor switching element embedded in a solid insulating material and an electrical connection extending through the solid insulating material from a terminal of the power semiconductor switching element to a connection surface of the prepackage.

Abstract: A power electronics converter may include: a first multi-layer planar carrier substrate having one or more electrically conductive layers; a second multi-layer planar carrier substrate having one or more electrically conductive layers; a converter commutation cell circuit including a plurality of commutation cell components that are electrically connected together via the one or more electrically conductive layers of the first planar carrier substrate and electrical connections, the commutation cell components including one or more power semiconductor switching elements in one or more power semiconductor prepackages, each power semiconductor prepackage including a power semiconductor switching element embedded in a solid insulating material; one or more additional converter components electrically connected to the one or more electrically conductive layers of the second planar carrier substrate; and one or more further electrical connections connecting together one or more of the electrically conductive layer

Abstract: A power electronics converter may include a converter commutation cell having a power circuit and a gate driver circuit. The power circuit includes at least one power semiconductor switching element and at least one capacitor. Each power semiconductor switching element is included in a power semiconductor prepackage, each prepackage including one or more power semiconductor switching elements embedded in a solid insulating material, each power semiconductor switching element having at least three terminals including a gate terminal. The gate driver circuit is electrically connected to and configured to provide switching signals to the gate terminal of each of the at least one power semiconductor switching element. A peak rated power output of the power electronics converter is greater than 25 kW and a value of a converter parameter ? is greater than or equal to 0.5 PV/FH.

Abstract: A power electronics converter includes a multi-layer planar carrier substrate having a plurality of electrically conductive layers, at least one electrical connection, and a converter commutation cell comprising a power circuit and a gate driver circuit. The power circuit includes at least one power semiconductor switching element and at least one capacitor. Each power semiconductor switching element is included in a power semiconductor prepackage having one or more power semiconductor switching elements embedded in a solid insulating material. The power electronics converter includes a heat sink configured to remove heat from the power semiconductor prepackage. A converter parameter ? is greater than or 20 equal to 100 kW/m3K, ? being defined as a heat transfer coefficient between the heat removal side of the power semiconductor prepackage and a cooling medium of the heat sink divided by the size of a gap between the power semiconductor prepackage and the heat sink.

Abstract: A power electronics converter includes a multi-layer planar carrier substrate, and a converter commutation cell including a power circuit. The power circuit includes at least one power semiconductor switching element, each of which is comprised in a power semiconductor prepackage. Each power semiconductor prepackage includes one or more power semiconductor switching elements embedded in a solid insulating material. A heat sink is arranged to remove heat from the respective power semiconductor prepackage. A thermal interface layer is arranged between a heat removal side of the respective power semiconductor prepackage and the heat sink. The thermal interface layer has a thermal conductivity and a mechanical compressibility. A converter parameter, which is defined as the mechanical compressibility of the thermal interface layer divided by the thermal conductivity of the thermal interface layer, satisfies 0.1 MNK/Wm<?<1 GNK/Wm.

Abstract: An electrical vertical takeoff and landing (eVTOL) aircraft includes an electrical propulsion unit that has a propeller or a fan configured to be driven to rotate by an electric motor arranged to receive electrical power from an inverter. The inverter includes a carrier substrate, and a converter commutation cell including a power circuit. The power circuit includes at least one power semiconductor switching element. Each power semiconductor switching element is comprised in a power semiconductor prepackage. A heat sink is arranged to remove heat from the respective power semiconductor prepackage. The heat sink is spaced apart from the carrier substrate to define a heat sink gap between the carrier substrate and the heat sink. A converter parameter ?, which is defined as a size of the heat sink gap divided by a maximum electric field strength in the heat sink gap, is less than or equal to 20 nm2/V.

Abstract: An electrical power system includes an electrical machine having one or more windings and an AC-DC power electronics converter including a commutation cell having a power circuit and a gate driver circuit. The power circuit includes a plurality of power semiconductor switching elements and a capacitor. The gate driver circuit is electrically connected to and configured to provide switching signals to a gate terminal of each power semiconductor switching element. A peak rated power output of the electrical machine and the AC-DC power electronics converter is greater than 25 kW, a maximum efficiency of the AC-DC power electronics converter is greater than 97%, and a value of parameter ? is greater than or equal to 0.3 PV/s2, where ? is a product of a maximum switching frequency of the switching signals and a maximum rate of change of a source-drain voltage of the plurality of power semiconductor switching elements.

Abstract: A power electronics converter may include a converter commutation cell having a power circuit and a gate driver circuit. The power circuit includes at least one power semiconductor switching element and at least one capacitor. Each power semiconductor switching element is included in a power semiconductor prepackage, each prepackage including one or more power semiconductor switching elements embedded in a solid insulating material, each power semiconductor switching element having at least three terminals including a gate terminal. The gate driver circuit is electrically connected to and configured to provide switching signals to the gate terminal of each of the at least one power semiconductor switching element. A peak rated power output of the power electronics converter is greater than 25 kW and a value of a converter parameter ? is less than or equal to 5 pHm3.

Abstract: A power electronics converter includes a carrier substrate, and a converter commutation cell including a power circuit. The power circuit includes at least one power semiconductor switching element. Each power semiconductor switching element is comprised in a power semiconductor prepackage. One or more terminals of each power semiconductor switching element are connected to at least one conductive layer of the carrier substrate at an electrical connection side of the respective power semiconductor prepackage. The electrical connection side is spaced apart from the carrier substrate by a gap. At least a portion of the gap is filled with an electrically insulating material with voids. A peak rated power output of the power electronics converter is greater than 25 kW, and a converter parameter, which is defined as a product of a dielectric strength of the electrically insulating material and a maximum void size, is less than or equal to 10,000 V.