Abstract: An integrated circuit (IC) package includes an IC die and a wave channel that electrically couples the IC die to a solder ball array. The wave channel is configured to resonate at an operating frequency band of the IC die.

Abstract: A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.

Abstract: A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.

Abstract: A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.

Abstract: A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.

Abstract: A millimeter wave integrated circuit (IC) chip. The IC chip comprises an IC die and a wire bond ball grid array package encapsulating the IC die. The wire bond ball grid array package comprises a solder ball array, a millimeter wave transmit channel, and a millimeter wave receive channel, wherein each millimeter wave transmit and receive channel electrically couples the IC die to a signal ball of the solder ball array and is configured to resonate at an operating frequency band of the millimeter wave IC chip.

Abstract: An integrated circuit (IC) device includes a substrate having a top surface including active circuitry including a plurality of I/O nodes, and a plurality of die pads coupled to the plurality of I/O nodes. A first dielectric layer including first dielectric vias is over the plurality of die pads. A redirect layer (RDL) including a plurality of RDL capture pads is coupled to the plurality of die pads over the first dielectric vias. A second dielectric layer including second dielectric vias is over the plurality of RDL capture pads. At least one of the second dielectric vias is a crack arrest via that has a via shape that includes an apex that faces away from a neutral stress point of the IC die and is oriented along a line from the neutral stress point to the crack arrest via to face in a range of ±30 degrees from the line. Under bump metallization (UBM) pads are coupled to the plurality of RDL capture pads over the second dielectric vias, and metal bonding connectors are on the UBM pads.

Abstract: An integrated circuit (IC) device includes a substrate having a top surface including active circuitry including a plurality of I/O nodes, and a plurality of die pads coupled to the plurality of I/O nodes. A first dielectric layer including first dielectric vias is over the plurality of die pads. A redirect layer (RDL) including a plurality of RDL capture pads is coupled to the plurality of die pads over the first dielectric vias. A second dielectric layer including second dielectric vias is over the plurality of RDL capture pads. At least one of the second dielectric vias is a crack arrest via that has a via shape that includes an apex that faces away from a neutral stress point of the IC die and is oriented along a line from the neutral stress point to the crack arrest via to face in a range of ±30 degrees from the line. Under bump metallization (UBM) pads are coupled to the plurality of RDL capture pads over the second dielectric vias, and metal bonding connectors are on the UBM pads.

Abstract: An integrated circuit package includes a die, a bump, an underbump metallization layer formed between the bump and the die, a portion of the underbump metallization layer under the bump having a first radius, and a redistribution layer formed between the underbump metallization layer and the die. The redistribution layer has a pad positioned under the underbump metallization layer. The pad has a second radius, and makes contact with the underbump metallization layer. The second radius is less than or equal to the first radius. The integrated circuit package also includes a first dielectric layer disposed between the die and the redistributing layer.

Abstract: A method for forming a semiconductor device can include electrically testing a plurality of semiconductor dies in wafer form subsequent to performing a first wafer dicing process, then performing a second wafer dicing process to dice the wafer and to singularize the plurality of semiconductor dies. Electrically testing the plurality of semiconductor dies in wafer form subsequent to the first dicing process can identify chips damaged during the first dicing process. The method can also include forming a plurality of grooves between adjacent dies which leaves a full wafer thickness at a perimeter of the wafer to result in a wafer which is more resistant to deflection and damage during handling.

Abstract: A packaged integrated circuit (IC) (100) includes a first substrate (110) comprising a first plurality of layers and a first circuit coupling features (112) at an upper surface of the first substrate (110), the first plurality of layers including a first electromagnetic interference shielding layer (132). The packaged IC also includes a second substrate (106) having an upper surface attached to a lower surface of the first substrate (110) by an electrically conductive adhesive material (136). The second substrate (106) includes a second plurality of layers and a second circuit coupling feature (108) at a lower surface of the second substrate (106). The first plurality of layer includes a second EMI shielding layer (134). The packaged IC further includes a functional die (124) disposed between the first (110) and the second (106) substrates and functionally coupled to the first (112) and/or the second (108) circuit coupling features.

Abstract: A packaged integrated circuit (IC) (100) includes a first substrate (110) including a first plurality of layers and first circuit coupling features (112) at an upper surface of the first substrate (110). The first plurality of layers include a first electromagnetic interference shielding layer (132). The packaged IC also includes a second substrate (106) having an upper surface attached to a lower surface of the first substrate (110) by an electrically conductive adhesive material (136). The second substrate (106) includes a second plurality of layers and a second circuit coupling feature (108) at a lower surface of the second substrate (106). The first plurality of layers includes a second EMI shielding layer (134). The packaged IC further includes a functional die (124) disposed between the first (110) and the second (106) substrates and functionally coupled to the first (112) and/or the second (108) circuit coupling features.

Abstract: In a semiconductor device for use in a wafer level chip scale package (WLCSP) and a method for fabrication, an inner scribe seal is formed around a functional circuit area that does not extend all the way into the corners of the rectangular die, and an outer scribe seal follows the perimeter of the die and into the corners, with the outer scribe seal having a continuous barrier wall towards the die edges so that moisture penetration in dielectric layers of the die is minimized, and cracks and delamination are stopped near the die edges. Limiting the extent of the insulating layer or layers in the WLCSP to cover the functional circuit area also reduces the stresses caused by these layers near the die corners. Other features further enhance the strength and barrier properties of the scribe seals and the layers near the die corners, terminate cracks and delamination at various levels within the dielectric stack of the die and the die protective overcoat, and prevent damage during the WLCSP assembly process.

Abstract: A packaged integrated circuit (IC) (100) includes a first substrate (110) including a first plurality of layers and first circuit coupling features (112) at an upper surface of the first substrate (110). The first plurality of layers include a first electromagnetic interference shielding layer (132). The packaged IC also includes a second substrate (106) having an upper surface attached to a lower surface of the first substrate (110) by an electrically conductive adhesive material (136). The second substrate (106) includes a second plurality of layers and a second circuit coupling feature (108) at a lower surface of the second substrate (106). The first plurality of layers includes a second EMI shielding layer (134). The packaged IC further includes a functional die (124) disposed between the first (110) and the second (106) substrates and functionally coupled to the first (112) and/or the second (108) circuit coupling features.

Abstract: An integrated circuit device includes a functional circuit die with a patterned rewiring layer defining a first rewiring pad and one or more second rewiring pads on opposite sides of a neutral point of the die. The device also includes at least one dielectric layer having bump opening features over the rewiring pads. The device further includes electrically conductive bump pad features formed on the dielectric layer over the bump opening features. The bump pad features make contact with the rewiring pads via the bump opening features. In the device, a center of the bump opening features are laterally offset from a center of the bump pad feature towards a neutral point of the die.

Abstract: An integrated circuit package includes a die, a bump, an underbump metallization layer formed between the bump and the die, a portion of the underbump metallization layer under the bump having a first radius, and a redistribution layer formed between the underbump metallization layer and the die. The redistribution layer has a pad positioned under the underbump metallization layer. The pad has a second radius, and makes contact with the underbump metallization layer. The second radius is less than or equal to the first radius. The integrated circuit package also includes a first dielectric layer disposed between the die and the redistributing layer.

Abstract: According to one embodiment of the invention, a power system for a die comprises a plurality of supply voltage lines, a plurality of ground lines, a plurality of metallized rails, and a via. Each of the plurality of supply voltage lines are in communication with at least one supply voltage pad. Each of the plurality of ground lines are in communication with at least one ground pad. The plurality of ground lines are interlaced with the plurality of supply voltage lines. The plurality of metallized rails are disposed across the plurality of supply voltage lines and the plurality of ground lines. The via communicatively couples at least one of the plurality of metallized rails to at least one of the supply voltage lines or at least one of the ground lines.

Abstract: Embodiments of the present invention relate generally to solder bump formation and semiconductor device assemblies. One embodiment related to a method for forming a bump structure includes providing a semiconductor device (10) having a bond pad (12), and forming a first masking layer (20) overlying the bond pad (12). The first masking layer (20) is patterned to form a first opening (22) overlying at least a portion of the bond pad (12). A second masking layer (40) is formed overlying the first masking layer (20), and the second masking layer (40) is patterned to form a second opening (42) overlying at least a portion of the first opening (22). The method further includes forming a stud (30) at least within the first opening (22) and a solder bump (60) at least within the second opening (42).

Abstract: A passivation layer (16) is formed over a substrate (10) having an interconnect pad (12, 13). An opening in the passivation layer (16) exposes a portion of the interconnect pad (12, 13). A polyimide structure (18, 20) is formed adjacent to the opening in the passivation layer 16. Under bump metallurgy (22, 24) is formed over at least a portion of the polyimide structure (18, 20). A solder bump (28, 26) is formed over the Under bump metallurgy (22, 24).