Abstract: In one example, a method includes running a downhole system into a downhole environment that comprises a wellbore, and the downhole system is configured such that a reusable plug of the downhole system is positioned uphole of a perforation gun of the downhole system, then, with the perforation gun, perforating a casing at a stage of the wellbore, and the perforating is performed using a projectile, and the perforating is performed by firing the projectile from a chamber of the perforation gun.

Abstract: A radiation hardened single board computer (SBC) includes a processor; synchronous dynamic random-access memory (SDRAM); non-volatile memory; a field programmable gate array (FPGA); and board-level physical layer interfaces.

Abstract: A radiation hardened single board computer (SBC) includes a processor; static random-access memory (SRAM); non-volatile memory; a field programmable gate array (FPGA); and board-level physical layer interfaces.

Abstract: A radiation hardened single board computer (SBC) includes a processor; synchronous dynamic random-access memory (SDRAM); non-volatile memory; a field programmable gate array (FPGA); and board-level physical layer interfaces.

Abstract: A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier.

Abstract: A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier.

Abstract: A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier.

Abstract: An InfiniBand™ computing node includes a dual port memory configured for storing data for a CPU and a host channel adapter in a manner that eliminates contention for access to the dual port memory. The dual port memory includes first and second memory ports, memory banks for storing data, and addressing logic configured for assigning first and second groups of the memory banks to the respective memory ports based on prescribed assignment information. The host channel adapter is configured for accessing the dual port memory via the first memory port, and the CPU is configured for accessing the dual port memory via the second memory port. The CPU also is configured for providing the prescribed assignment information to the addressing logic, enabling the host channel adapter to access the first group of memory banks via the first memory port as the CPU concurrently accesses the second group of memory banks via the second memory port.

Abstract: A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier.

Abstract: A rotary moulding machine for biscuit dough of the kind comprising a pair of co-operating rolls defining the bottom of a dough hopper, one roll having an embossed surface for feeding dough downwardly and into contact with the surface of the other or moulding roll which is formed with moulding recesses, and a scraper blade mounted to bear against the surface of the latter roll so as to press dough into the moulding recesses and remove excess dough from the remainder of the surface, includes the improvement that the scraper blade is carried by a pivoted mounting capable of infinitely variable adjustment along a path which guides the mounting in a direction having at least a substantial vertical component and a biasing arrangement is provided which exerts a turning moment on the mounting about the pivotal axis so as to press the scraper blade against the surface of the moulding roll.