Abstract: Methods of uniformly delayering an IC chip are disclosed. One embodiment includes: performing an ash on the wafer including an Al layer thereof and etching the Al layer; polishing an edge of the wafer using a slurry including an approximately 30 ?m polishing particles; removing the aluminum layer and at least one metal layer by polishing using a slurry including approximately 9 ?m diamond polishing particles and a non-abrasive backside of a polishing sheet; removing any remaining metal layers to a first metal layer by polishing using a slurry including approximately 3 ?m diamond polishing particles and the non-abrasive backside of a polishing sheet; removing any scratches by polishing using a slurry including approximately 1 ?m diamond polishing particles and the non-abrasive backside of a polishing sheet; and removing the first metal layer to a polyconductor layer by polishing using a colloidal slurry including approximately 0.25 ?m diamond polishing particles.

Abstract: Methods of uniformly delayering an IC chip are disclosed. One embodiment includes: performing an ash on the wafer including an Al layer thereof and etching the Al layer; polishing an edge of the wafer using a slurry including an approximately 30 ?m polishing particles; removing the aluminum layer and at least one metal layer by polishing using a slurry including approximately 9 ?m diamond polishing particles and a non-abrasive backside of a polishing sheet; removing any remaining metal layers to a first metal layer by polishing using a slurry including approximately 3 ?m diamond polishing particles and the non-abrasive backside of a polishing sheet; removing any scratches by polishing using a slurry including approximately 1 ?m diamond polishing particles and the non-abrasive backside of a polishing sheet; and removing the first metal layer to a polyconductor layer by polishing using a colloidal slurry including approximately 0.25 ?m diamond polishing particles.

Abstract: In copper backend integrated circuit technology, advanced technology using low-k organic-based interlayer dielectrics have a problem of carbon contamination that dos not occur in circuits using oxide as dielectric. A composite liner layer for the copper lines uses Ti as the bottom layer, which has the property of gettering carbon and other contaminants. The known problem with Ti of reacting with copper to form a high resistivity compound is avoided by adding a layer of TiN, which isolates the Ti and the copper.

Abstract: A mixer incorporating a shaft having one end which is adapted to be received into the chuck of a drill and the other end which includes a specially shaped mixing blade. The blade includes triangular end portions that are both angled up relative to the general plane of the blade. Rotation of the blade in one direction causes fluid to be pushed down and to the side. Reversing the blade direction causes the fluid to be pushed upward and to the side.