Patents by Inventor Stanley J. Wang
Stanley J. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230415482Abstract: Aspects of the present disclosure are directed to an apparatus including a circuit region and a fluidic region. In a particular example, the circuit region with logical circuits thereon, includes a thermal oxide layer on a silicon substrate, and a dielectric layer over the field oxide layer, the dielectric layer including a doped dielectric film. The microfluidic device further includes a fluidic region including fluid ports formed through a surface of the apparatus and including an un-doped dielectric film. The fluidic region includes an aperture in the dielectric layer, where the aperture is defined by a dielectric wall which forms part of the dielectric layer. A sealing film deposited over the dielectric wall may prevent the doped dielectric film from contacting fluid contained in the fluid port.Type: ApplicationFiled: September 11, 2023Publication date: December 28, 2023Applicant: Hewlett-Packard Development Company, L.P.Inventors: Stanley J. Wang, Anthony M. Fuller
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Patent number: 11787180Abstract: A microfluidic device including a fluid ejection channel defined by a fluid barrier and an orifice, or nozzle, for containing and/or passing fluids, and further including micro-electromechanical systems (MEMS) and/or electronic circuitry may be fabricated on a silicon substrate and included in a fluid ejection system. Various microfabrication techniques used for fabricating semiconductor devices may be used to manufacture such microfluidic devices.Type: GrantFiled: April 29, 2019Date of Patent: October 17, 2023Assignee: Hewlett-Packard Development Company, L.P.Inventors: Stanley J. Wang, Anthony M. Fuller
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Publication number: 20220177296Abstract: Examples of an epitaxial-silicon wafer with a buried oxide layer are described herein. Examples of methods to manufacture an epitaxial-silicon wafer with a buried oxide layer are also described herein. In some examples, material may be removed from an epitaxial-silicon wafer at a surface opposite an epitaxial surface layer until the epitaxial-silicon wafer is a specified thickness. The thinned epitaxial-silicon wafer may be bonded to an oxidized-silicon wafer at an oxidized surface forming a buried oxide layer.Type: ApplicationFiled: August 23, 2019Publication date: June 9, 2022Applicant: Hewlett-Packard Development Company, L.P.Inventors: Stanley J. Wang, James E. Ellenson
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Publication number: 20220048763Abstract: Aspects are directed to techniques for fabricating a microfluidic device on a substrate. In a particular example, a method of manufacturing a microfluidic device includes growing a thermal oxide layer on a substrate and depositing a dielectric layer, including doped a dielectric film, over the thermal oxide layer. Next, an aperture defined by a dielectric wall which forms part of the dielectric layer is formed in the dielectric layer by selectively removing the dielectric film. Finally, the aperture is sealed with a sealing film to prevent the dielectric film from being exposed to a fluid contained in the aperture. The sealing film may be of an electrically insulating material resistive to corrosive attributes of the fluid contained in the aperture.Type: ApplicationFiled: April 29, 2019Publication date: February 17, 2022Applicant: Hewlett-Packard Development Company, L.P.Inventors: Stanley J Wang, Anthony M Fuller
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Publication number: 20220040977Abstract: A microfluidic device including a fluid ejection channel defined by a fluid barrier and an orifice, or nozzle, for containing and/or passing fluids, and further including micro-electromechanical systems (MEMS) and/or electronic circuitry may be fabricated on a silicon substrate and included in a fluid ejection system. Various microfabrication techniques used for fabricating semiconductor devices may be used to manufacture such microfluidic devices.Type: ApplicationFiled: April 29, 2019Publication date: February 10, 2022Applicant: Hewlett-Packard Development Company, L.P.Inventors: Stanley J. Wang, Anthony M. Fuller
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Patent number: 11155085Abstract: A thermal fluid ejection heating element may include a first conductive trace, and an at least partially perforated resistive thin film material electrically coupling the first conductive trace to a second conductive trace. The perforations within the perforated resistive thin film material defines a resistance of the thermal fluid ejection heating element.Type: GrantFiled: July 17, 2017Date of Patent: October 26, 2021Assignee: Hewlett-Packard Development Company, L.P.Inventors: Stanley J Wang, Erik D Torniainen, Vincent C Korthuis
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Patent number: 10675867Abstract: A system for isolating a failed resistor in a liquid dispensing system including a fusible links described. The system includes drive circuitry to drive a voltage supply to a resistor. The fusible link is disposed between a field effect transistor (FET) and the resistor. The fusible link is to fuse apart upon failure of the resistor.Type: GrantFiled: March 15, 2019Date of Patent: June 9, 2020Assignee: Hewlett-Packard Development Company, L.P.Inventors: Stanley J. Wang, Terry McMahon, Mohammed S. Shaarawi, Donald W. Schulte
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Publication number: 20200139707Abstract: A thermal fluid ejection heating element may include a first conductive trace, and an at least partially perforated resistive thin film material electrically coupling the first conductive trace to a second conductive trace. The perforations within the perforated resistive thin film material defines a resistance of the thermal fluid ejection heating element.Type: ApplicationFiled: July 17, 2017Publication date: May 7, 2020Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Stanley J Wang, Erik D Torniainen, Vincent C Korthuis
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Publication number: 20190210362Abstract: A system for isolating a failed resistor in a liquid dispensing system including a fusible links described. The system includes drive circuitry to drive a voltage supply to a resistor. The fusible link is disposed between a field effect transistor (FET) and the resistor. The fusible link is to fuse apart upon failure of the resistor.Type: ApplicationFiled: March 15, 2019Publication date: July 11, 2019Inventors: Stanley J. Wang, Terry McMahon, Mohammed S. Shaarawi, Donald W. Schulte
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Patent number: 10272671Abstract: A system for isolating a failed resistor in a liquid dispensing system including a fusible links described. The system includes drive circuitry to drive a voltage supply to a resistor. The fusible link is disposed between a field effect transistor (FET) and the resistor. The fusible link is to fuse apart upon failure of the resistor.Type: GrantFiled: October 8, 2015Date of Patent: April 30, 2019Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Stanley J. Wang, Terry McMahon, Mohammed S. Shaarawi, Donald W. Schulte
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Publication number: 20180222181Abstract: A system for isolating a failed resistor in a liquid dispensing system including a fusible links described. The system includes drive circuitry to drive a voltage supply to a resistor. The fusible link is disposed between a field effect transistor (FET) and the resistor. The fusible link is to fuse apart upon failure of the resistor.Type: ApplicationFiled: October 8, 2015Publication date: August 9, 2018Inventors: Stanley J. Wang, Terry McMahon, Mohammed S. Shaarawi, Donald W. Schulte
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Patent number: 7486588Abstract: A method includes a row precharge voltage applied to a node and a column voltage that is set. A row enable signal is pulsed to a switching device coupled between the node and the column voltage to cause the node voltage to be lowered to a desired level.Type: GrantFiled: January 12, 2007Date of Patent: February 3, 2009Assignee: Hewlett-Packard Development Company, L.P.Inventors: Eric Martin, Edward Enciso, Stanley J. Wang
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Publication number: 20080100534Abstract: An imaging apparatus and method include a pixel and a two point switching element.Type: ApplicationFiled: October 26, 2006Publication date: May 1, 2008Inventors: Randy K. Rannow, Zhizhang Chen, James W. Stasiak, Stanley J. Wang
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Patent number: 7203111Abstract: An embodiment includes a first semiconductor element coupled between a precharge signal and a node, the first semiconductor element to allow current to flow from the precharge signal to the node when a positive voltage is present on the precharge signal, and a switching device coupled between the node and a voltage signal, the switching device to allow current flow between the node and the voltage signal when an enable signal is asserted.Type: GrantFiled: February 8, 2005Date of Patent: April 10, 2007Assignee: Hewlett-Packard Development Company, L.P.Inventors: Eric Martin, Edward Enciso, Stanley J. Wang
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Publication number: 20040212026Abstract: Devices and methods for controlling a MEMS actuator are disclosed. The device includes a pair of parallel plates having a gap therebetween. The size of the gap is responsive to a voltage differential between the pair of plates. The device also includes a controller adapted to apply a voltage profile to at least one of the pair of plates to maintain a desired gap size. The voltage profile has a time-varying voltage.Type: ApplicationFiled: May 18, 2004Publication date: October 28, 2004Applicant: HEWLETT-PACKARD COMPANYInventors: Andrew L. Van Brocklin, Eric T. Martin, Stanley J. Wang, Adam L. Ghozeil
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Patent number: 6800497Abstract: A method of manufacturing a power switching transistor for a fluid ejection device includes forming a first conductivity type region and a first diffused region within the first conductivity type region. The first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region. A gate is formed and is defined to have a thin oxide region and a thick oxide region. The thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region and the thin oxide region is at a defined distance from the first diffused region.Type: GrantFiled: April 30, 2002Date of Patent: October 5, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Stanley J. Wang, George H. Corrigan, Tim R. Koch
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Publication number: 20030202023Abstract: A method of manufacturing a power switching transistor for a fluid ejection device includes forming a first conductivity type region and a first diffused region within the first conductivity type region. The first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region. A gate is formed and is defined to have a thin oxide region and a thick oxide region. The thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region and the thin oxide region is at a defined distance from the first diffused region.Type: ApplicationFiled: April 30, 2002Publication date: October 30, 2003Inventors: Stanley J. Wang, George H. Corrigan, Tim R. Koch
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Patent number: 6253188Abstract: A system and method for providing classified ads over the Internet. The system includes a plurality of regional newspaper World Wide Web servers, and associated newspaper classified ad generators; a central classified ad information collection and distribution facility, and a central World Wide Web application server facility, all connected to the Internet such that Internet users can connect to the Newspaper Web server and central Web application server facility to search for and obtain classified ads. The Web application server facility includes one of more application servers and one or more newspaper classified ad database servers. The system apparatus features elements which enable Internet users to enter the system at the newspaper Web server and subsequently search for classified ads held in the ad databases at the database servers thorugh the application servers at the central Wed application facility.Type: GrantFiled: September 20, 1996Date of Patent: June 26, 2001Assignee: Thomson Newspapers, Inc.Inventors: Anthony L. Witek, Elaine B. Cristiani, Patrick C. Helbach, Stanley J. Wang