Patents by Inventor Stanley Osher
Stanley Osher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8731313Abstract: This invention relates to a method and apparatus for accurate compression and decompression of data. More specifically, this invention relates to a method and apparatus for compressing three dimensional spatial points (so called “point cloud”) and decompressing such data to produce an accurate point cloud. In one embodiment of the present invention, a level set based method is used to reconstruct a surface to approximate the surface of the point cloud. This reconstructed surface is defined implicitly as the zero level set of a function, which can be computed on a regular three-dimensional rectangular grid. Furthermore, the three-dimensional grid may be rearranged into a two-dimensional grid where the data are compressed and stored in a form of gradient. In order to recover the point cloud, the three-dimensional grid is rebuilt from the two-dimensional data and an interpolating algorithm on the implicit function is utilized to compute the points on the surface.Type: GrantFiled: March 18, 2010Date of Patent: May 20, 2014Assignee: Level Set Systems, Inc.Inventors: Pradeep Thiyanaratnam, Stanley Osher
-
Patent number: 8300971Abstract: This invention relates to a method and apparatus for image processing, and more particularly, this invention relates to a method and apparatus for processing image data generated by bioanalytical devices, such as DNA sequencers. An object of the present invention is to remove artifacts such as noise, blur, background, non-uniform illumination, lack of registration, and extract pixel signals back to DNA-beads in a way that de-mixes pixels that contain contributions from nearby beads.Type: GrantFiled: March 22, 2010Date of Patent: October 30, 2012Assignee: LevelSet Systems, Inc.Inventors: Stanley Osher, Bin Dong, Barry Lynn Merriman
-
Patent number: 8056021Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: GrantFiled: June 4, 2010Date of Patent: November 8, 2011Assignee: Luminescent Technologies, Inc.Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Patent number: 7992109Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: GrantFiled: June 4, 2010Date of Patent: August 2, 2011Assignee: Luminescent Technologies, Inc.Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Patent number: 7984391Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: GrantFiled: June 4, 2010Date of Patent: July 19, 2011Assignee: Luminescent Technologies, Inc.Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Publication number: 20110007981Abstract: This invention relates to a method and apparatus for image processing, and more particularly, this invention relates to a method and apparatus for processing image data generated by bioanalytical devices, such as DNA sequencers. An object of the present invention is to remove artifacts such as noise, blur, background, non-uniform illumination, lack of registration, and extract pixel signals back to DNA-beads in a way that de-mixes pixels that contain contributions from nearby beads.Type: ApplicationFiled: March 22, 2010Publication date: January 13, 2011Applicant: Level Set SystemsInventors: Stanley Osher, Bin Dong, Barry Lynn Merriman
-
Publication number: 20100275176Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: ApplicationFiled: June 4, 2010Publication date: October 28, 2010Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Publication number: 20100275175Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: ApplicationFiled: June 4, 2010Publication date: October 28, 2010Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Publication number: 20100251203Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: ApplicationFiled: June 4, 2010Publication date: September 30, 2010Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Publication number: 20100239178Abstract: This invention relates to a method and apparatus for accurate compression and decompression of data. More specifically, this invention relates to a method and apparatus for compressing three dimensional spatial points (so called “point cloud”) and decompressing such data to produce an accurate point cloud. In one embodiment of the present invention, a level set based method is used to reconstruct a surface to approximate the surface of the point cloud. This reconstructed surface is defined implicitly as the zero level set of a function, which can be computed on a regular three-dimensional rectangular grid. Furthermore, the three-dimensional grid may be rearranged into a two-dimensional grid where the data are compressed and stored in a form of gradient. In order to recover the point cloud, the three-dimensional grid is rebuilt from the two-dimensional data and an interpolating algorithm on the implicit function is utilized to compute the points on the surface.Type: ApplicationFiled: March 18, 2010Publication date: September 23, 2010Applicant: Level Set SystemsInventors: Stanley Osher, Pradeep Thiyanaratnam
-
Patent number: 7757201Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: GrantFiled: February 12, 2007Date of Patent: July 13, 2010Assignee: Luminescent Technologies, Inc.Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Patent number: 7707541Abstract: A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern is partitioning into subsets, which are distributed to processors. Then, a set of second mask patterns, each of which corresponds to one of the subsets, is determined. Moreover, at least one of the second set of mask patterns may be determined by: providing a first mask pattern that includes distinct types of regions corresponding to distinct types of regions of the photo-mask, calculating a gradient of a function, and determining a second mask pattern based, at least in part, on the gradient. Note that the function may depend on the first mask pattern and an estimate of a wafer pattern that results from the photolithographic process, and that the gradient may be calculated in accordance with a formula obtained by taking a derivative of the function.Type: GrantFiled: September 13, 2006Date of Patent: April 27, 2010Assignee: Luminescent Technologies, Inc.Inventors: Daniel S. Abrams, Stanley Osher, Danping Peng
-
Patent number: 7703068Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: GrantFiled: February 12, 2007Date of Patent: April 20, 2010Assignee: Luminescent Technologies, Inc.Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Patent number: 7571423Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: GrantFiled: September 12, 2005Date of Patent: August 4, 2009Assignee: Luminescent Technologies, Inc.Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Patent number: 7441227Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: GrantFiled: October 16, 2006Date of Patent: October 21, 2008Assignee: Luminescent Technologies Inc.Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Publication number: 20070198966Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: ApplicationFiled: October 16, 2006Publication date: August 23, 2007Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Publication number: 20070192756Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: ApplicationFiled: February 12, 2007Publication date: August 16, 2007Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Publication number: 20070184357Abstract: Photomask patterns are represented using contours defined by mask functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: ApplicationFiled: September 13, 2006Publication date: August 9, 2007Inventors: Daniel Abrams, Stanley Osher, Danping Peng
-
Publication number: 20070136716Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: ApplicationFiled: February 12, 2007Publication date: June 14, 2007Inventors: Daniel Abrams, Danping Peng, Stanley Osher
-
Patent number: 7178127Abstract: Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.Type: GrantFiled: August 22, 2005Date of Patent: February 13, 2007Assignee: Luminescent Technologies, Inc.Inventors: Daniel Abrams, Danping Peng, Stanley Osher