Patents by Inventor Stanley S. Todorov

Stanley S. Todorov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming dielectric thin films on silicon by low energy ion beam bombardment
    Patent number: 4776925
    Abstract: A low-energy oxygen and/or nitrogen ion beam with an energy level of about 60 eV is used to form an ultra-thin layer of silicon adduct on unheated silicon substrates. The ion beam is created with a single-grid Kaufman-type source and the process is performed in a vacuum chamber evacuated to a base pressure of about 3.times.10.sup.-7 torr with oxygen and/or nitrogen gases, with or without argon introduced into the chamber. FET-gate-quality oxides on the order of about 45 angstroms have been produced in the successful fabrication of n-channel MOSFET's.
    Type: Grant
    Filed: April 30, 1987
    Date of Patent: October 11, 1988
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: Eric R. Fossum, Stanley S. Todorov