Abstract: A workpiece clamp has a base with first and second sides with a cam ring rotatably coupled to the first side. The cam ring has plurality of cam slots. An actuator selectively rotates the cam ring with respect to the base. A plurality of rotary clamps, have respective shafts, cam followers assemblies, and workpiece engagement members, where the shaft extends through the base from the first to second side and rotate about an axis. The shaft has individually rotatable first and second members. The cam follower assemblies couple first and second portions of the shaft, where a cam follower is radially offset from the shaft axis and configured to engage a respective cam slot. The workpiece engagement member has a gripper member that is radially offset from the shaft axis and is configured to engage a workpiece based on a position of the cam follower in the respective cam slots.

Abstract: A workpiece clamp has a base with first and second sides with a cam ring rotatably coupled to the first side. The cam ring has plurality of cam slots. An actuator selectively rotates the cam ring with respect to the base. A plurality of rotary clamps, have respective shafts, cam followers assemblies, and workpiece engagement members, where the shaft extends through the base from the first to second side and rotate about an axis. The shaft has individually rotatable first and second members. The cam follower assemblies couple first and second portions of the shaft, where a cam follower is radially offset from the shaft axis and configured to engage a respective cam slot. The workpiece engagement member has a gripper member that is radially offset from the shaft axis and is configured to engage a workpiece based on a position of the cam follower in the respective cam slots.

Abstract: An end station for an ion implantation system is provided, wherein the end station comprises a process chamber configured to receive an ion beam. A load lock chamber is coupled to the process chamber and configured to selectively introduce a workpiece into the process chamber. An electrostatic chuck within the process chamber is configured to selectively translate through the ion beam, and a shield within the process chamber is configured to selectively cover at least a portion of a clamping surface of the electrostatic chuck to protect the clamping surface from one or more contaminants associated with the ion beam. A docking station within the process chamber selectively retains the shield, and a transfer mechanism is configured to transfer a workpiece between the load lock chamber and the electrostatic chuck, and to transfer the shield between the docking station and the clamping surface of the electrostatic chuck.

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract: An end station for an ion implantation system is provided, wherein the end station comprises a process chamber configured to receive an ion beam. A load lock chamber is coupled to the process chamber and configured to selectively introduce a workpiece into the process chamber. An electrostatic chuck within the process chamber is configured to selectively translate through the ion beam, and a shield within the process chamber is configured to selectively cover at least a portion of a clamping surface of the electrostatic chuck to protect the clamping surface from one or more contaminants associated with the ion beam. A docking station within the process chamber selectively retains the shield, and a transfer mechanism is configured to transfer a workpiece between the load lock chamber and the electrostatic chuck, and to transfer the shield between the docking station and the clamping surface of the electrostatic chuck.

Abstract: A method and system can align a robot arm with a payload station. A probe and a contact detector may be positioned on the robot arm and three pins may be placed on the payload station. A controller may move the robot arm in a pattern over the payload station until contact may be made between the probe and one of the pins. A search about the contact location may be performed to obtain additional contacts. The search may be interrupted when contact is made between the probe and one of the pins. The position of the pin may be calculated from three such contacts on the spherical portion of the pin. The location of the probe at the time of contact may be stored and a localized search about the pin location may be performed. If the position of the pin cannot be resolved from three contacts, additional contacts may be made until a combination of three contacts does provide a solution.

Abstract: Systems and methods for handling wafers include retrieving a first wafer from a wafer cassette using a first arm, transferring the first wafer from the first transfer arm to a second arm, delivering the first wafer for processing to a process chamber using the second arm, removing the first wafer from the process chamber using the first arm, and returning the first wafer to the cassette using the first arm. The systems and methods can include retrieving a first wafer from a wafer cassette using a first arm, delivering the first wafer for processing to a process chamber using the first arm, removing a processed wafer from the process chamber using a second arm, returning the processed wafer to the cassette using the second arm, and iteratively retrieving, delivering, removing and returning wafers from the cassette while alternating arms between iterations.