Patents by Inventor Stanley Williams

Stanley Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NANOSCALE SWITCHING DEVICES WITH PARTIALLY OXIDIZED ELECTRODES
    Publication number: 20130026440
    Abstract: A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
    Type: Application
    Filed: April 19, 2010
    Publication date: January 31, 2013
    Inventors: Jianhua Yang, Gilberto Ribeiro, Stanley William
  • CONTROLLING PHASE RESPONSE IN A SUB-WAVELENGTH GRATING LENS
    Publication number: 20130027776
    Abstract: A sub-wavelength grating device having controlled phase response includes a grating layer having line widths, line thicknesses, line periods, and line spacings selected to produce a first level of control in phase changes of different portions of a beam of light reflected from the grating layer. The device also includes a substrate affixed to the grating layer that produces a second level of control in phase changes of different portions of a beam of light reflected from the grating layer, the second level of control being accomplished abrupt stepping of the substrate in a horizontal dimension, ramping the substrate in a horizontal dimension, or changing the index of refraction in a horizontal dimension.
    Type: Application
    Filed: April 13, 2010
    Publication date: January 31, 2013
    Inventors: Wei Wu, R. Stanley Williams, Jingjing Li, Theodore I. Kamins, Marco Fiorentino
  • MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE
    Publication number: 20130026434
    Abstract: A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor also includes a switching layer positioned adjacent to the second surface of the first electrode and a second electrode positioned adjacent to the switching layer.
    Type: Application
    Filed: January 29, 2010
    Publication date: January 31, 2013
    Inventors: Jianhua Yang, John Pual Strachan, Matthew D. Pickett, R. Stanley Williams
  • Plasmonic high-speed devices for enhancing the performance of microelectronic devices
    Patent number: 8357980
    Abstract: Various embodiments of the present invention are directed to photonic devices that can be used to collect and convert incident ER into surface plasmons that can be used to enhance the operation of microelectronic devices. In one embodiment of the present invention, a photonic device comprises a dielectric layer having a top surface and a bottom surface, and a planar nanowire network covering at least a portion of the top surface of the dielectric layer. The bottom surface of the dielectric layer is positioned on the top surface of a substrate, and the planar nanowire network is configured to convert incident electromagnetic radiation into surface plasmons that penetrate through the dielectric layer and into at least a portion of the substrate.
    Type: Grant
    Filed: October 15, 2007
    Date of Patent: January 22, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: R. Stanley Williams, David Fattal
  • Enhancing signals in Surface Enhanced Raman Spectroscopy (SERS)
    Patent number: 8358407
    Abstract: An integrated device for enhancing signals in Surface Enhanced Raman Spectroscopy (SERS). The integrated device comprising an array of nanostructures comprising a material, wherein the material is configured to allow light to pass through. The integrated device also comprising SERS active nanoparticles disposed on at least portion of the array of nanostructures and a mirror integrated below a base of the array of nanostructures. The mirror is configured to reflect light passing through the material into the array of nanostructures.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: January 22, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Min Hu, Wei Wu, Fung Suong Ou, Zhiyong Li, R. Stanley Williams
  • Modular data processing components and systems
    Patent number: 8351204
    Abstract: Data processing modules including a housing and optical interfaces associated with the exterior of the housing, and systems including the same.
    Type: Grant
    Filed: January 31, 2008
    Date of Patent: January 8, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jong-Souk Yeo, R. Stanley Williams, Chandrakant D. Patel, Duncan R. Stewart
  • Free-standing nanowire sensor and methods for forming and using the same
    Patent number: 8347726
    Abstract: A sensing device includes a nanowire configured to deform upon exposure to a force, and a transducer for converting the deformation into a measurement. The nanowire has two opposed ends; and the transducer is operatively connected to one of the two opposed ends of the nanowire. The other of the two opposed ends of the nanowire is freestanding.
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: January 8, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Nobuhiko P. Kobayashi, Shih-Yuan Wang, Alexandre M. Bratkovski, R. Stanley Williams
  • CONTROLLED SWITCHING MEMRISTOR
    Publication number: 20120313070
    Abstract: A controlled switching memristor includes a first electrode, a second electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer includes a material to switch between an ON state and an OFF state, in which at least one of the first electrode, the second electrode, and the switching layer is to generate a permanent field within the memristor to enable a speed and an energy of switching from the ON state to the OFF state to be substantially symmetric to a speed and energy of switching from the OFF state to the ON state.
    Type: Application
    Filed: January 29, 2010
    Publication date: December 13, 2012
    Inventors: R. Stanley Williams, Gilberto Medeiros Ribeiro, Dmitri Borisovich Strukov, Jianhua Yang
  • Nano-enhanced Raman spectroscopy substrate packaging structure
    Patent number: 8330951
    Abstract: Packaged NERS-active structures are disclosed that include a NERS substrate having a NERS-active structure thereon, and a packaging substrate over the NERS substrate having an opening therethrough, the opening in alignment with the NERS-active structure. A membrane may cover the opening in the packaging substrate. In order to perform nanoenhanced Raman spectroscopy, the membrane may be removed, and an analyte placed on the NERS substrate adjacent the NERS-active structure. The membrane may be replaced with another membrane after the analyte has been placed on the substrate. The membrane may maintain the pristine state of the substrate before it is deployed, and the replacement membrane may preserve the substrate and analyte for archival purposes. Also disclosed are methods for performing NERS with packaged NERS-active structures.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: December 11, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhiyong Li, William M. Tong, R. Stanley Williams
  • Changing a memristor state
    Patent number: 8331131
    Abstract: A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: December 11, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Feng Miao, Jianhua Yang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Compact sensor system
    Patent number: 8319963
    Abstract: A compact sensor system comprising: an analysis cell configured for photon-matter interaction, where photons are received from a light source; and an integrated-optical spectral analyzer configured for identifying a set of frequencies, the integrated-optical spectral analyzer comprising: a waveguide coupled with the analysis cell, the waveguide configured for propagating a set of frequencies through the waveguide; one or more ring resonators coupled with the waveguide, the one or more ring resonators comprising a predetermined bandwidth and configured for capturing the set of frequencies corresponding to frequencies within the predetermined bandwidth; and one or more frequency detectors coupled with the one or more tunable ring resonators, the one or more frequency detectors configured for generating electrical signals that identify each of the set of frequencies.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: November 27, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Min Hu, Wei Wu, Fung Suong Ou, Zhen Peng, Zhiyong Li, R. Stanley Williams
  • ELECTROFORMING FREE MEMRISTOR
    Publication number: 20120280196
    Abstract: An electroforming free memristor (100) includes a first electrode (102), a second electrode (104) spaced from the first electrode, and a switching layer (110) positioned between the first electrode and the second electrode. The switching layer is formed of a matrix of a switching material (112) and reactive particles (114) configured to react with the switching material during a fabrication process of the memristor to form one or more conductance channels 120 in the switching layer.
    Type: Application
    Filed: January 29, 2010
    Publication date: November 8, 2012
    Inventors: Jianhua Yang, Gilberto Medelros Ribeiro, R. Stanley Williams
  • OPTICAL SENSOR NETWORKS AND METHODS FOR FABRICATING THE SAME
    Publication number: 20120281980
    Abstract: Various embodiments of the present invention are directed to sensor networks and to methods for fabricating sensor networks. In one aspect, a sensor network includes a processing node (110, 310), and one or more sensor lines (102,202,302) optically coupled to the processing node. Each sensor line comprises a waveguide (116,216,316), and one or more sensor nodes (112,210). Each sensor node is optically coupled to the waveguide and configured to measure one or more physical conditions and, encode measurement results in one or more wavelengths of light carried by the waveguide to the processing node.
    Type: Application
    Filed: January 29, 2010
    Publication date: November 8, 2012
    Inventors: Hans S. Cho, Alexandre M. Bratkovski, R. Stanley Williams, Peter George Hartwell
  • Three Dimensional Multilayer Circuit
    Publication number: 20120280282
    Abstract: A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.
    Type: Application
    Filed: January 29, 2010
    Publication date: November 8, 2012
    Inventors: Wei Wu, R. Stanley Williams
  • Reconfigurable Crossbar Memory Array
    Publication number: 20120275211
    Abstract: A two-dimensional array of switching devices comprises a plurality of crossbar tiles. Each crossbar tile has a plurality of row wire segments intersecting a plurality of column wire segments, and a plurality of switching devices each formed at an intersection of a row wire segment and a column wire segment. The array has a plurality of lateral latches disposed in a plane of the switching devices. Each lateral latch is linked to a first wire segment of a first crossbar tile and a second wire segment of a second crossbar tile opposing the first wire segment. The lateral latch is operable to close or open to form or break an electric connection between the first and second wire segments.
    Type: Application
    Filed: April 30, 2011
    Publication date: November 1, 2012
    Inventors: Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Graphene memristor having modulated graphene interlayer conduction
    Patent number: 8294132
    Abstract: A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: October 23, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Feng Miao, Joshua Yang, Wei Wu, Shih-Yuan Wang, R. Stanley Williams
  • Nanowire-based device and array with coaxial electrodes
    Patent number: 8283556
    Abstract: A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: October 9, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Nobuhiko Kobayashi, R. Stanley Williams, Shih-Yuan Wang
  • Photonic device and method of making same using nanowires
    Patent number: 8273983
    Abstract: A photonic device, a method of making the device and a nano-scale antireflector employ a bramble of nanowires. The photonic device and the method include a first layer of a microcrystalline material provided on a substrate surface and a second layer of a microcrystalline material provided on the substrate surface horizontally spaced from the first layer by a gap. The photonic device and the method further include, and the nano-scale antireflector includes, the bramble of nanowires formed between the first layer and the second layer. The nanowires have first ends integral to crystallites in each of the first layer and the second layer. The nanowires of the bramble extend into the gap from each of the first layer and the second layer.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: September 25, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Shih-Yuan Wang, R. Stanley Williams, Nobuhiko Kobayashi
  • Nanoscale three-terminal switching device
    Patent number: 8270200
    Abstract: A nanoscale three-terminal switching device has a bottom electrode, a top electrode, and a side electrode, each of which may be a nanowire. The top electrode extends at an angle with respect to the bottom electrode and has an end section going over and overlapping the bottom electrode. An active region is disposed between the top electrode and bottom electrode and contains a switching material. The side electrode is disposed opposite from the top electrode and in electrical contact with the active region. A self-aligned fabrication process may be used to automatically align the formation of the top and side electrodes with respect to the bottom electrode.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: September 18, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Wei Wu, Qiangfei Xia, Philip J. Kuekes, R. Stanley Williams
  • Tunable apparatus for performing SERS
    Patent number: 8269963
    Abstract: A tunable apparatus for performing Surface Enhanced Raman Spectroscopy (SERS) includes a deformable layer and a plurality of SERS-active nanoparticles disposed at one or more locations on the deformable layer, wherein the one or more locations are configured to be illuminated with light of a pump wavelength to cause Raman excitation light to interact with the nanoparticles and produce enhanced Raman scattered light from molecules located in close proximity to the nanoparticles. In addition, a morphology of the deformable layer is configured to be controllably varied to modify an intensity of the Raman scattered light produced from the molecules.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: September 18, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Fung Suong Ou, Min Hu, Wei Wu, Zhiyong Li, R Stanley Williams