Abstract: Devices for mapping logical addresses to physical locations on an integrated circuit die are disclosed herein. An embodiment includes a die which has a plurality of bits that are electrically accessible by way of logical addresses. A plurality of bits have intentionally induced defects that form a predetermined fault pattern.

Abstract: Methods and devices for mapping logical addresses to physical locations on an integrated circuit die are disclosed herein. An embodiment of the method includes fabricating a die, where the die has a plurality of bits that are electrically accessible by way of logical addresses. A plurality of bits have known defects that form a predetermined fault pattern at a predetermined location on the die. The bits are tested by using the logical addresses, wherein the testing yields data as to the functionality of the bits. The test results are searched for the predetermined fault pattern. The physical locations of the defective bits constituting the predetermined fault pattern are correlated with their logical addresses based on the location of the predetermined fault pattern.

Abstract: An integrated circuit includes a set of non-volatile bits that may be programmed during multiprobe testing of the integrated circuit (IC). A defective portion of the IC is identified by testing the IC during multiprobe testing prior to packaging the IC. The IC is scrapped if the defective portion of IC does not meet repair criteria. A defect category is selected that is indicative of the defective portion, wherein the defect category is selected from a set of defect categories. The defective portion is replaced with a standby repair portion by modifying circuitry on the IC. The selected defect category is recorded in a plurality of non-volatile bits on the IC. The non-volatile bits may be read after extended testing or after end-user deployment in order to track failure rate of repaired ICs based on the defect category.

Abstract: An integrated circuit includes a set of non-volatile bits that may be programmed during multiprobe testing of the integrated circuit (IC). A defective portion of the IC is identified by testing the IC during multiprobe testing prior to packaging the IC. The IC is scrapped if the defective portion of IC does not meet repair criteria. A defect category is selected that is indicative of the defective portion, wherein the defect category is selected from a set of defect categories. The defective portion is replaced with a standby repair portion by modifying circuitry on the IC. The selected defect category is recorded in a plurality of non-volatile bits on the IC. The non-volatile bits may be read after extended testing or after end-user deployment in order to track failure rate of repaired ICs based on the defect category.

Abstract: A method of stressing and screening static random access memory (SRAM) arrays to identify memory cells with bit line side pass transistor defects. After writing initial data states into the memory array under nominal bias conditions, an elevated bias voltage is applied to the memory array, for example to its power supply node. Under the elevated bias voltage, alternating data patterns are written into and read from the memory array for a selected duration. The elevated bias voltage is reduced, and a write screen is performed to identify defective memory cells. The dynamic stress of the repeated writes and reads accelerates early life failures, facilitating the write screen.

Abstract: Methods and devices for mapping logical addresses to physical locations on an integrated circuit die are disclosed herein. An embodiment of the method includes fabricating a die, where the die has a plurality of bits that are electrically accessible by way of logical addresses. A plurality of bits have known defects that form a predetermined fault pattern at a predetermined location on the die. The bits are tested by using the logical addresses, wherein the testing yields data as to the functionality of the bits. The test results are searched for the predetermined fault pattern. The physical locations of the defective bits constituting the predetermined fault pattern are correlated with their logical addresses based on the location of the predetermined fault pattern.

Abstract: A method of screening static random access memory (SRAM) arrays to identify memory cells with bit line side pass transistor defects. After writing a known data state to the memory cells under test, a forward back-bias is applied to the load transistors of those cells. A write of the opposite data state is then performed, followed by a read of the memory cells. The process is repeated for the opposite data state.

Abstract: A method of screening static random access memory (SRAM) arrays to identify memory cells with bit line side pass transistor defects. After writing a known data state to the memory cells under test, a forward back-bias is applied to the load transistors of those cells. A write of the opposite data state is then performed, followed by a read of the memory cells. The process is repeated for the opposite data state.

Abstract: A method of stressing and screening static random access memory (SRAM) arrays to identify memory cells with bit line side pass transistor defects. After writing initial data states into the memory array under nominal bias conditions, an elevated bias voltage is applied to the memory array, for example to its power supply node. Under the elevated bias voltage, alternating data patterns are written into and read from the memory array for a selected duration. The elevated bias voltage is reduced, and a write screen is performed to identify defective memory cells. The dynamic stress of the repeated writes and reads accelerates early life failures, facilitating the write screen.

Abstract: A method for forming shallow trench isolation structures is provided that includes forming a plurality of isolation trenches (32) in a substrate (10) where the isolation trenches (32) separate active areas (18). An insulation layer (44) is formed outwardly from the substrate (10) with the insulation layer (44) filling the isolation trenches (32) and covering the active areas (18). A planarization layer (46) is formed outwardly from the insulation layer (44). The planarization layer (46) and the insulation layer (44) are removed together at a substantially even rate down to a polish stop (14) outward from the active areas (18).

Abstract: The invention includes a shallow trench isolation structure having a trench formed in the Si substrate and having an upper surface, a liner layer formed in the trench overlying the upper surface of the trench, a gettering material layer formed on the liner layer; and a filler oxide formed on the gettering material layer The gettering material layer inhibits the diffusion of metallic contaminants from the filler oxide into the surrounding silicon substrate regions