Abstract: Embodiments of a deposition reactor that compensates for lateral flow variation are disclosed. The reactor has at least one wall defining a deposition chamber comprising a first region and a second region, the wall having a purposely formed curvature defining a height of the deposition chamber. An inlet for a fluid comprising reactants or deposition material is in fluid communication with the deposition chamber. Portions of the fluid flowing through the deposition chamber have a residence time within the deposition chamber that varies by ?20% across a cross-sectional width of the deposition chamber. The deposition chamber may further comprise an outlet in fluid communication with a third region. The reactor is suitable for depositing material layers having a uniform thickness. Methods of using the reactor also are disclosed.