Abstract: A plasma chamber RF excitation system includes a high frequency RF power source having a fixed RF match circuit at its output and sensing and control apparatus for sensing the amount of RF power delivered by the RF power source and for regulating the output power level of the RF power source so as to maintain the RF power delivered by the RF power source at a desired level, and an RF plasma chamber including an RF radiator. The power source is mounted proximate or directly on the plasma chamber so that the distance between them is much less than an eighth of a wavelength at thr frequency of the RF source. The system may further include an endpoint detector for a plasma etch process or a chamber cleaning process which halts the process when the VSWR or reflected power ceases to change in response to the progress of the etch process.

Abstract: The invention is to a process for the preparation of biuret-containing polyisocyanates by catalytic reaction of aliphatic and/or cycloaliphatic diisocyanates with a biuretizing agent, where the biuretizing agent employed is water in finely disperse form and the reaction is carried out in the presence of OH-acidic compounds.

Abstract: A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed.

Abstract: Polyisocyanates containing isocyanurate groups are prepared by a partial trimerization of (cyclo)aliphatic diisocyanates in the presence of at least one trimerization catalyst selected from the group consisting of tetraalkylammonium alkyl carbonates of the formula (I) ##STR1## (quaternary ammonioalkyl) carbonates having a betaine structure of the formula (II) ##STR2## and the preferred use of the polyisocyanates containing isocyanurate groups which are obtainable in this way is aspolyisocyanate component in polyurethane finishes.

Abstract: Isocyanurate- and/or uretidone-containing polyisocyanates having a reduced color index and improved shelf life are prepared by conventional catalytic oligomerization of aliphatic and/or cycloaliphatic diisocyanates and treatment of the oligomerization products with peroxycarboxylic acids.

Abstract: A process for the preparation of isocyanurate and urethane group-containing and, if desired, uretdiode and allophanate group-containing polyisocyanate mixtures by partially cyclizing organic, preferably (cyclo)aliphatic diisocyanates, in the presence of trimerization catalysts, deactivating these catalysts, reacting the partially trimerized, isocyanurate and, if desired, uretdiode group-containing polyisocyanate mixture with 0.5 to 10 mol % of at least one aliphatic or cycloaliphatic alcohol and/or polyoxyalkylene alcohol, and separating off the monomeric diisocyanates.