Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Abstract: System and method related to photonic computing are provided. A photonic computing system may include an optical interference region and an input waveguide configured to couple an optical input signal to the optical interference region and to create an optical interference pattern in the optical interference region. The interference pattern has an optical power distribution. The photonic computing system may further include a readout unit that is arranged in an inner area of the optical interference region. The readout unit is configured to detect an optical readout signal of the optical power distribution at a readout position of the inner area of the optical interference region. A method is also provided for performing photonic computing.

Abstract: An electrical resistor element, system, and method related thereto, wherein the electrical resistor element includes a tunable resistance. The electrical resistor element comprises a first contact electrode, a second contact electrode and a ferroelectric layer arranged between the first contact electrode and the second contact electrode. The ferroelectric layer comprises a first area having a first polarization direction and a second area having a second polarization direction. The first polarization direction is different to the second polarization direction. The ferroelectric layer further comprises a domain wall between the first area and the second area. The electrical resistor element further comprises a first pinning element configured to stabilize the first polarization direction of the ferroelectric layer.

Abstract: A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer are arranged in series between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.

Abstract: Embodiments are directed to a (quasi) one-dimensional photonic crystal cavity. This cavity comprises a set of aligned pillars, where the pillars are embedded in a cladding. At least one of the pillars has a sandwich structure, wherein a layer of nonlinear optical material is between two layers of materials having, each, a refractive index that is higher than the refractive index of the nonlinear optical material. Embodiments can further include an all-optical modulator or an all-optical transistor, comprising a photonic crystal such as described above. Finally, embodiments are further directed to methods for modulating an optical signal, using such a photonic crystal cavity.

Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Abstract: An optical sensor includes an interaction region configured to comprise an analyte and an illumination source configured to illuminate the interaction region with an optical input signal. The optical sensor further includes an optical coupling structure configured to collect transmitted parts of the optical input signal from the interaction region and an optical neuromorphic network that is directly optically coupled to the optical coupling structure and is configured to receive and process the transmitted parts of the optical input signal in the optical domain. The invention further concerns a related method for analyzing an analyte by an optical sensor.

Abstract: An optical sensor includes an interaction region configured to comprise an analyte and an illumination source configured to illuminate the interaction region with an optical input signal. The optical sensor further includes an optical coupling structure configured to collect transmitted parts of the optical input signal from the interaction region and an optical neuromorphic network that is directly optically coupled to the optical coupling structure and is configured to receive and process the transmitted parts of the optical input signal in the optical domain. The invention further concerns a related method for analyzing an analyte by an optical sensor.

Abstract: System and method related to photonic computing are provided. A photonic computing system may include an optical interference region and an input waveguide configured to couple an optical input signal to the optical interference region and to create an optical interference pattern in the optical interference region. The interference pattern has an optical power distribution. The photonic computing system may further include a readout unit that is arranged in an inner area of the optical interference region. The readout unit is configured to detect an optical readout signal of the optical power distribution at a readout position of the inner area of the optical interference region. A method is also provided for performing photonic computing.

Abstract: The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.

Abstract: An optical sensor includes an interaction region configured to comprise an analyte and an illumination source configured to illuminate the interaction region with an optical input signal. The optical sensor further includes an optical coupling structure configured to collect transmitted parts of the optical input signal from the interaction region and an optical neuromorphic network that is directly optically coupled to the optical coupling structure and is configured to receive and process the transmitted parts of the optical input signal in the optical domain. The invention further concerns a related method for analyzing an analyte by an optical sensor.

Abstract: A Brassica plant including a Raphanus genomic fragment within its genome, wherein the fragment confers pod shattering tolerance phenotype POSH+ and the fragment is characterized by the absence of at least one SNP within one or more of the following Raphanus markers: SEQID NOs 4-18.

Abstract: An optical sensor includes an interaction region configured to comprise an analyte and an illumination source configured to illuminate the interaction region with an optical input signal. The optical sensor further includes an optical coupling structure configured to collect transmitted parts of the optical input signal from the interaction region and an optical neuromorphic network that is directly optically coupled to the optical coupling structure and is configured to receive and process the transmitted parts of the optical input signal in the optical domain. The invention further concerns a related method for analyzing an analyte by an optical sensor.

Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele

Abstract: A radiation detector and method and computer program product for detecting radiation. The detector comprises a waveguide structure, a sensing structure comprising a phase change material, an optical transmitter and optical receiver. The optical transmitter transmits an optical sensing signal for receipt at the optical receiver via the waveguide structure. The phase change material comprises a first phase state at a first temperature range and a second phase state at a second temperature range and transitions from the first phase state to the second phase state under exposure of the radiation. The sensing structure is arranged in an evanescent field area of the waveguide structure and provides for an evanescent field of the optical sensing signal a first complex refractive index in the first phase state and a second complex refractive index in the second phase state. The first complex refractive index is different from the second complex refractive index.

Abstract: Embodiments are directed to a (quasi) one-dimensional photonic crystal cavity. This cavity comprises a set of aligned pillars, where the pillars are embedded in a cladding. At least one of the pillars has a sandwich structure, wherein a layer of nonlinear optical material is between two layers of materials having, each, a refractive index that is higher than the refractive index of the nonlinear optical material. Embodiments can further include an all-optical modulator or an all-optical transistor, comprising a photonic crystal such as described above. Finally, embodiments are further directed to methods for modulating an optical signal, using such a photonic crystal cavity.

Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele

Abstract: The present invention is notably directed to a (quasi) one-dimensional photonic crystal cavity. This cavity comprises a set of aligned pillars, where the pillars are embedded in a cladding. At least one of the pillars has a sandwich structure, wherein a layer of nonlinear optical material is between two layers of materials having, each, a refractive index that is higher than the refractive index of the nonlinear optical material. The invention can furthermore be embodied as an all-optical modulator or an all-optical transistor, comprising a photonic crystal such as described above. Finally, the invention is further directed to methods for modulating an optical signal, using such a photonic crystal cavity.

Abstract: A method comprising: providing a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages.

Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele