Patents by Inventor Stefan Bengt Berglund

Stefan Bengt Berglund has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with multilayer contact and method of manufacturing the same
    Patent number: 9466688
    Abstract: The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.
    Type: Grant
    Filed: April 4, 2016
    Date of Patent: October 11, 2016
    Assignee: NXP B.V.
    Inventors: Soenke Habenicht, Detlef Oelgeschlager, Olrik Schumacher, Stefan Bengt Berglund
  • SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160218193
    Abstract: The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.
    Type: Application
    Filed: April 4, 2016
    Publication date: July 28, 2016
    Inventors: Soenke HABENICHT, Detlef OELGESCHLAGER, Olrik SCHUMACHER, Stefan Bengt BERGLUND
  • Semiconductor device with multilayer contact and method of manufacturing the same
    Patent number: 9331186
    Abstract: The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: May 3, 2016
    Assignee: NXP B.V.
    Inventors: Soenke Habenicht, Detief Oelgeschlaeger, Olrik Schumacher, Stefan Bengt Berglund
  • Methods, systems and devices for electrostatic discharge protection
    Patent number: 8810004
    Abstract: A resistor-equipped transistor includes a package that provides an external collector connection node (114, 134), an external emitter connection node (120, 140) and an external base connection node (106, 126). The package contains a substrate upon which a transistor (102, 122), first and second resistors, and first and second diodes are formed. The transistor has an internal collector (118, 138), an internal emitter (120, 140) and an internal base (116, 136) with the first resistor (104, 124) being electrically connected between the internal base and the external base connection node and the second resistor (108, 128) being electrically connected between the internal base and the internal emitter.
    Type: Grant
    Filed: November 26, 2009
    Date of Patent: August 19, 2014
    Assignee: NXP, B.V.
    Inventors: Stefan Bengt Berglund, Steffen Holland, Uwe Podschus
  • SEMICONDUCTOR DEVICE WITH MULTILAYER CONTACT AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20120248575
    Abstract: The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.
    Type: Application
    Filed: December 21, 2009
    Publication date: October 4, 2012
    Applicant: NXP B.V.
    Inventors: Soenke Habenicht, Detief Oelgeschlaeger, Olrik Schumacher, Stefan Bengt Berglund
  • Methods, Systems and Devices for Electrostatic Discharge Protection
    Publication number: 20120205780
    Abstract: A resistor-equipped transistor includes a package that provides an external collector connection node (114, 134), an external emitter connection node (120, 140) and an external base connection node (106, 126). The package contains a substrate upon which a transistor (102, 122), first and second resistors, and first and second diodes are formed. The transistor has an internal collector (118, 138), an internal emitter (120, 140) and an internal base (116, 136) with the first resistor (104, 124) being electrically connected between the internal base and the external base connection node and the second resistor (108, 128) being electrically connected between the internal base and the internal emitter.
    Type: Application
    Filed: November 26, 2009
    Publication date: August 16, 2012
    Applicant: NXP B.V.
    Inventors: Stefan Bengt Berglund, Steffen Holland, Uwe Podschus