Abstract: Aspects of the disclosure provide a semiconductor device and method of manufacturing. Embodiments of the disclosure enable placing of protective structures without modifying spacing rules. The device includes a first device region defined above a substrate, the first device region being isolated from the substrate by a buried insulating layer. The first device region includes a first power rail, a first signal line traversing at least a first portion of the first device region, and a first plurality of edge cells positioned in the substrate adjacent the first device region. A first edge cell includes a substrate contact connecting the first power rail to the substrate and a first signal line antenna diode connecting the first signal line to the substrate.

Abstract: A semiconductor device is disclosed including, among other things, a first device region defined above a substrate, wherein the first device region is isolated from the substrate by a buried insulating layer, the first device region including a first power rail, a first signal line traversing at least a first portion of the first device region, and a first plurality of edge cells positioned in the substrate adjacent the first device region, wherein at least a first edge cell of the first plurality of edge cells includes a substrate contact connecting the first power rail to the substrate and a first signal line antenna diode connecting the first signal line to the substrate.

Abstract: Structures for a circuit including field-effect transistors and methods for fabricating and operating such circuits. A plurality of logic cells with a first well and a second well. The first well is directly connected with ground. A tap cell includes an inverter having an output connected with the second well. The inverter is configured to provide a bias voltage having a first state in which a positive voltage is supplied to the second well and a second state in which the second well is connected with ground.

Abstract: The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Abstract: It is provided a semiconductor device comprising a power line, a Silicon-on-Insulator, SOI, substrate comprising a semiconductor layer and a semiconductor bulk substrate comprising a first doped region, a first transistor device formed in and above the SOI substrate and comprising a first gate dielectric formed over the semiconductor layer and a first gate electrode formed over the gate dielectric, a first diode electrically connected to the first gate electrode and a second diode electrically connected to the first diode and the power line; and wherein the first and second diodes are partially formed in the first doped region.

Abstract: It is provided a semiconductor device comprising a power line, a Silicon-on-Insulator, SOI, substrate comprising a semiconductor layer and a semiconductor bulk substrate comprising a first doped region, a first transistor device formed in and above the SOI substrate and comprising a first gate dielectric formed over the semiconductor layer and a first gate electrode formed over the gate dielectric, a first diode electrically connected to the first gate electrode and a second diode electrically connected to the first diode and the power line; and wherein the first and second diodes are partially formed in the first doped region.

Abstract: The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Abstract: A memory cell includes an inverter loop. The inverter loop includes a plurality of inverter pairs, wherein an output of each inverter pair is connected to an input of a next inverter pair in the loop. Each inverter pair includes a first inverter and a second inverter. An input of the first inverter provides the input of the inverter pair. An output of the second inverter provides the output of the inverter pair. An output of the first inverter is connected to an input of the second inverter. The memory cell further includes a plurality of passgate transistor pairs. Each passgate transistor pair includes a first passgate transistor connected to the input of the first inverter of the inverter pair associated with the passgate transistor pair and a second passgate transistor connected to the input of the second inverter of the inverter pair associated with the passgate transistor pair.

Abstract: Disclosed herein is a multi-clock interface, an integrated circuit and a module thereof having the multi-clock interface and a library having cells corresponding to the above noted circuitry. In one embodiment the multi-clock interface includes: (1) a multi-clock reset synchronizer configured to receive a first external clock signal and a second external clock signal that is a multiple of the first clock signal, the reset synchronizer configured to synchronize a reset of both the first and second external clock signals and based thereon generate a reset release signal and (2) a multi-phase clock generator configured to receive the reset release signal and the second clock signal, the multi-phase clock generator configured to generate multiple clock phases from the second clock signal based on the reset release signal.

Abstract: Disclosed herein is a multi-clock interface, an integrated circuit and a module thereof having the multi-clock interface and a library having cells corresponding to the above noted circuitry. In one embodiment the multi-clock interface includes: (1) a multi-clock reset synchronizer configured to receive a first external clock signal and a second external clock signal that is a multiple of the first clock signal, the reset synchronizer configured to synchronize a reset of both the first and second external clock signals and based thereon generate a reset release signal and (2) a multi-phase clock generator configured to receive the reset release signal and the second clock signal, the multi-phase clock generator configured to generate multiple clock phases from the second clock signal based on the reset release signal.

Abstract: A method of generating a floorplan layout of an integrated circuit (IC) that is amenable to implementation in a computer-aided design tool. The method is capable of performing placement and routing processing for the IC while requiring very little information about the specific circuitry used in various functional blocks of the IC. For example, at the time of the placement and routing processing, one or more functional blocks of the IC can be specified as empty functional blocks and/or functional blocks that are only partially rendered in gates.

Abstract: A method of generating a floorplan layout of an integrated circuit (IC) that is amenable to implementation in a computer-aided design tool. The method is capable of performing placement and routing processing for the IC while requiring very little information about the specific circuitry used in various functional blocks of the IC. For example, at the time of the placement and routing processing, one or more functional blocks of the IC can be specified as empty functional blocks and/or functional blocks that are only partially rendered in gates.

Abstract: A circuit which includes an IP cell having a function select input signal line, combinatorial logic having an output connected to the function select input signal line of the IP cell, a configuration register having an output connected to an input of the combinatorial logic, wherein a high/low input signal line is also connected to the combinatorial logic, wherein the circuit provided that the configuration register receives configuration data during a start-up sequence, and configuration data is held by the combinatorial logic as the configuration register powers down during a functional mode.

Abstract: An ASIC device and method provide clock signals to load circuits having a balanced clock tree including a master clock line, for example a clock trunk or H-tree, and branched clock lines feeding the clock signals to load circuits and being balanced with respect to the delays and loads in domains of the ASIC device to which the branched clock lines supply the clock signals. The ASIC device and method generate derived clock signals by gating the master clock signal, in which the derived clock signals have a frequency reduced by a factor n>1 (n=2, . . . , N), which is adapted to the need of the load circuits in a particular domain, and route the master clock signal and/or the derived clock signal for a particular domain to the load circuit of said domain.