Abstract: A battery housing for a vehicle driven by an electric motor comprises a tray part with a bottom and side walls formed thereon, for receiving at least one battery module. The side walls of the tray part are respectively interconnected by a curved edge section. Said battery housing is characterized in that each curved edge section of the tray part is connected to at least one of the side walls connected thereby, with a connecting wall section curved in the opposite direction to the curved edge section being connected between the respective curved edge sections and side walls, and the side walls as well as each curved edge section and each curved connecting wall section are at a distance from the, or the plurality of, battery module(s).

Abstract: A battery case for a vehicle driven by an electric motor, said battery case comprising a tray part (1, 1.1, 1.2, 1.3) which has a base (2, 2.1, 2.2, 2.3) onto which side walls (3, 3.1, 3.2, 3.3) having a mounting flange (4) are molded, and comprising a frame structure (5, 5.1, 5.2) which surrounds the tray part (1, 1.1, 1.2, 1.3) on the outer side thereof and has a hollow chamber (11, 11.1, 11.2). The side walls (3, 3.1, 3.2, 3.3) of the tray part (1, 1.1, 1.2, 1.3) are at the same time part of the frame structure (5, 5.1, 5.2) and separate the tray interior from the hollow chamber (11, 11.1, 11.2) of the frame structure (5, 5.1, 5.2). The side walls (3, 3.1, 3.2, 3.3) with their mounting flange (4) are part of the frame structure (5, 5.1, 5.2) and the frame structure (5, 5.1, 5.2) has at least two additional frame members (6, 8, 3.1, 4.1, 13, 3.2, 4.2, 13.1) connected to the tray part (1, 1.1, 1.2, 1.3) for completing the frame structure (5, 5.1, 5.2), of which a first frame member (6, 3.1, 3.

Abstract: A battery case for a vehicle driven by an electric motor, said battery case comprising a tray part (1, 1.1, 1.2, 1.3) which has a base (2, 2.1, 2.2, 2.3) onto which side walls (3, 3.1, 3.2, 3.3) having a mounting flange (4) are molded, and comprising a frame structure (5, 5.1, 5.2) which surrounds the tray part (1, 1.1, 1.2, 1.3) on the outer side thereof and has a hollow chamber (11, 11.1, 11.2). The side walls (3, 3.1, 3.2, 3.3) of the tray part (1. 1.1, 1.2, 1.3) are at the same time part of the frame structure (5, 5.1, 5.2) and separate the tray interior from the hollow chamber (11, 11.1, 11.2) of the frame structure (5, 5.1, 5.2). The side walls (3, 3.1, 3.2, 3.3) with their mounting flange (4) are part of the frame structure (5, 5.1, 5.2) and the frame structure (5, 5.1, 5.2) has at least two additional frame members (6, 8, 3.1, 4.1, 13, 3.2, 4.2, 13.1) connected to the tray part (1, 1.1, 1.2, 1.3) for completing the frame structure (5, 5.1, 5.2), of which a first frame member (6, 3.1, 3.

Abstract: A battery housing for a vehicle driven by an electric motor comprises a tray part with a bottom and side walls formed thereon, for receiving at least one battery module. The side walls of the tray part are respectively interconnected by a curved edge section. Said battery housing is characterized in that each curved edge section of the tray part is connected to at least one of the side walls connected thereby, with a connecting wall section curved in the opposite direction to the curved edge section being connected between the respective curved edge sections and side walls, and the side walls as well as each curved edge section and each curved connecting wall section are at a distance from the, or the plurality of, battery module(s).

Abstract: A carrier for an electrical component, including a substrate having a surface, with an electrically conductive contact zone arranged on the surface of the substrate, a solder pad disposed on the contact zone, and a solder stop structure disposed laterally next to the solder pad. The solder stop structure has a surface that is less wettable with liquid solder than a surface of the contact zone. The solder stop structure subdivides the contact zone into a first zone region and a second zone region, with the first zone region having the solder pad. The solder stop structure extends over a portion of a total length of the contact zone such that the contact zone has a free connecting region that is free of the solder stop structure. The first and second zone regions are connected to one another by means of the free connecting region.

Abstract: An optoelectronic semiconductor element may include at least one LED chip which emits infrared radiation via a top side during operation. The radiation has a global intensity maximum at wavelengths between 800 nm and 1100 nm. The radiation has, at most 5% of the intensity of the intensity maximum at a limit wavelength of 750 nm. The radiation has a visible red light component. The semiconductor element may further include a filter element, which is arranged directly or indirectly on the top side of the LED chip and which has a transmissivity of at most 5% for the visible red light component of the LED chip, wherein the transmissivity of the filter element is at least 80%, at least in part, for wavelengths between the limit wavelength and 1100 nm, and a radiation exit surface provided for emitting the filtered radiation.

Abstract: A carrier for an electrical component, including a substrate having a surface, with an electrically conductive contact zone arranged on the surface of the substrate, a solder pad disposed on the contact zone, and a solder stop structure disposed laterally next to the solder pad. The solder stop structure has a surface that is less wettable with liquid solder than a surface of the contact zone. The solder stop structure subdivides the contact zone into a first zone region and a second zone region, with the first zone region having the solder pad. The solder stop structure extends over a portion of a total length of the contact zone such that the contact zone has a free connecting region that is free of the solder stop structure. The first and second zone regions are connected to one another by means of the free connecting region.

Abstract: An optoelectronic device includes an optoelectronic component that generates or receives radiation, a frame and an optical element, wherein the frame extends in a vertical direction between a radiation passage side and a rear side; an opening, in which the component is arranged, is formed in the frame; the optical element covers the component in a plan view of the radiation passage side; and the optical element is a Fresnel lens or a Fresnel zone plate.

Abstract: An optoelectronic semiconductor element may include at least one LED chip which emits infrared radiation via a top side during operation. The radiation has a global intensity maximum at wavelengths between 800 nm and 1100 nm. The radiation has, at most 5% of the intensity of the intensity maximum at a limit wavelength of 750 nm. The radiation has a visible red light component. The semiconductor element may further include a filter element, which is arranged directly or indirectly on the top side of the LED chip and which has a transmissivity of at most 5% for the visible red light component of the LED chip, wherein the transmissivity of the filter element is at least 80%, at least in part, for wavelengths between the limit wavelength and 1100 nm, and a radiation exit surface provided for emitting the filtered radiation.

Abstract: An optoelectronic device includes an optoelectronic component that generates or receives radiation, a frame and an optical element, wherein the frame extends in a vertical direction between a radiation passage side and a rear side; an opening, in which the component is arranged, is formed in the frame; the optical element covers the component in a plan view of the radiation passage side; and the optical element is a Fresnel lens or a Fresnel zone plate.

Abstract: The invention relates to a fan comprising a housing and a fan wheel arranged on a motor shaft and being drivable by a motor. According to the invention, the fan is designed as a mixing fan for transporting and mixing a combustible medium with air, wherein at least the fan wheel is designed in an insulating manner.

Abstract: Embodiments of the invention provide a method for spin coating a film onto a substrate. Preferred embodiments deposit a film, such as a resist, having a thickness gradient from the substrate's centrifugal center to its edge. The gradient may be linear or stepwise continuous, for example. Other embodiments of the invention provide a semiconductor fabrication method. The method comprises forming a resist layer having a predetermined thickness on a substrate. Preferably, the predetermining includes making swing curve measurements on a single test wafer that is coated according to embodiments of the invention.

Abstract: A preferred embodiment of the invention provides a semiconductor fabrication process. Embodiments include a method for removing contaminating particles from the surface of the wafer, such as in lithography. Embodiments also provide methods for repairing patterning defects caused by particles. The method comprises forming a resist layer over a substrate and a topcoat layer over the resist layer. The method further includes exposing the resist layer, and developing the resist layer a first time. Preferably, developing the resist layer the first time comprises dissolving a first portion of the topcoat layer in the developing solution. Embodiments further include spinning the substrate, developing the resist layer a second time after spinning the substrate. Preferably, developing the resist layer the second time comprises dissolving a second portion of the topcoat layer.

Abstract: A preferred embodiment of the invention provides a method for forming an integrated circuit. The method comprises forming a resist layer on a substrate. Preferably, the photoresist layer comprises a photo acid generator (PAG). Embodiments include irradiating the resist through a mask to generate a photoacid in the resist, heating the resist at a first temperature, and then heating the resist at a second temperature. Heating at the first temperature evaporates water from the resist. Heating at the second temperature deprotects the resist.

Abstract: Systems and methods of lithography of semiconductor devices are disclosed. A preferred embodiment comprises a method of exposing a workpiece. The method includes moving a workpiece along a plurality of exposure fields in a column in a first direction while alternatingly moving a lithography mask in a second direction and the first direction for the plurality of exposure fields in the column. The second direction comprises a direction opposite the first direction.

Abstract: Fluids for use in immersion lithography systems are disclosed. A resistivity-altering substance is introduced into a fluid, making it more conductive. The fluid is then disposed between an immersion head of a projection lens system and a semiconductor wafer during an exposure process. Because the fluid is conductive, electrostatic energy that may develop during the movement of the semiconductor wafer with respect to the projection lens system during the exposure process is discharged through the conductive fluid, preventing damage to an immersion head of the projection lens system, the semiconductor wafer, and sensors of a stage that supports the semiconductor wafer.

Abstract: A preferred embodiment of the invention provides a method for forming an integrated circuit. The method comprises forming a resist layer on a substrate. Preferably, the photoresist layer comprises a photo acid generator (PAG). Embodiments include irradiating the resist through a mask to generate a photoacid in the resist, heating the resist at a first temperature, and then heating the resist at a second temperature. Heating at the first temperature evaporates water from the resist. Heating at the second temperature deprotects the resist.

Abstract: Fluids for use in immersion lithography systems are disclosed. A resistivity-altering substance is introduced into a fluid, making it more conductive. The fluid is then disposed between an immersion head of a projection lens system and a semiconductor wafer during an exposure process. Because the fluid is conductive, electrostatic energy that may develop during the movement of the semiconductor wafer with respect to the projection lens system during the exposure process is discharged through the conductive fluid, preventing damage to an immersion head of the projection lens system, the semiconductor wafer, and sensors of a stage that supports the semiconductor wafer.

Abstract: Methods of cleaning immersion exposure tools using ultrasonic waves and systems thereof are disclosed. An ultrasonic wave generator is coupled to the fluid of an immersion exposure tool, or to a component that makes contact with the fluid. The ultrasonic wave generator is activated, generating ultrasonic waves in the fluid that dislodge debris and particulates, cleaning the immersion exposure tool. The ultrasonic wave generator may be activated during an exposure process to vary the distance between the lens system and the wafer, increasing the process window.

Abstract: The use of conjugated compounds which contain two or more pyrimidine rings as part of the conjugated system as electroluminescence materials. The conjugated compounds containing pyrimidine rings have a high thermal stability and a high photostability. They are partially soluble in acids, which also makes possible processing from solution, as well as by vapor deposition.