Abstract: The invention relates to a device (10) for supplying a fuel consumer (1) of a vehicle (20) with a gaseous fuel. The device (10) comprises multiple pressure accumulators(2) for storing and providing pressurised fuel, as well as a discharge device (3), which fluidically connects the multiple pressure accumulators (2) with the fuel consumer (1). In order to advantageously allow for a utilisation of a temperature change occurring during a fuel discharge, preferably a discharge cold temperature released during the discharge of fuel, according to the invention, the discharge device (3) is thermally coupled to a coolant circuit (4) of the vehicle (20). The invention also relates to a vehicle (20) comprising a device (10) of this type.

Abstract: A lamella block is provided for a calibrating device for calibrating an extruded profile, wherein the lamella block includes a lamella structure, which has a plurality of lamellae that are spaced apart from each other by grooves and arranged in the longitudinal direction of the lamella block. The lamella structure has a variably designed division in the longitudinal direction of the lamella block. Further provided is a method for manufacturing the aforementioned lamella block, as well as a calibrating device, which includes a plurality of the lamella blocks mentioned above. Also provided is a system for additively fabricating the lamella blocks mentioned above, a corresponding computer program and a corresponding dataset.

Abstract: The invention relates to a device (10) for supplying a fuel consumer (1) of a vehicle (20) with a gaseous fuel. The device (10) comprises multiple pressure accumulators(2) for storing and providing pressurised fuel, as well as a discharge device (3), which fluidically connects the multiple pressure accumulators (2) with the fuel consumer (1). In order to advantageously allow for a utilisation of a temperature change occurring during a fuel discharge, preferably a discharge cold temperature released during the discharge of fuel, according to the invention, the discharge device (3) is thermally coupled to a coolant circuit (4) of the vehicle (20). The invention also relates to a vehicle (20) comprising a device (10) of this type.

Abstract: A fin block is provided for a calibrating device for the calibrating of an extruded profile. The fin block includes a fin structure, which has a plurality of fins which are spaced apart from one another by grooves and are arranged in longitudinal direction of the fin block, wherein the fins of the fin structure have a variable dimension in longitudinal direction of the fin block. Further, there is provided a method for the production of the above-mentioned fin block and a calibrating device, which includes a plurality of the above-mentioned fin blocks. Furthermore, there is provided a system for the additive manufacture of the above-mentioned fin block, a corresponding computer program and corresponding data set.

Abstract: Various embodiments include a method for checking a variable valve lift control of an internal combustion engine comprising: during operation of the internal combustion engine, detecting a rotational speed of the internal combustion engine; and measuring an intake pressure in the intake tract of the internal combustion engine corresponding to the detected rotational speed. The method further includes: defining a reference frequency dependent on the rotational speed of the internal combustion engine; defining a comparison frequency as a non-integral multiple of the reference frequency; determining amplitudes of oscillations of the intake pressure at the reference frequency and amplitudes of oscillations of the intake pressure at the comparison frequency; and evaluating a ratio of the determined amplitudes and the respective absolute values.

Abstract: A method for simulation of lithography overlay is disclosed which comprises storing alignment parameters used to align a semiconductor wafer prior to a lithography step; storing process control parameters used during the lithography step on the semiconductor wafer, storing overlay parameters measured after the lithography step, calculating alternative alignment parameters and alternative process control parameters. The alternative alignment parameters and the alternative process control parameters are added to cleansed overlay parameters to obtain simulated lithography overlay data.

Abstract: A lamella block is provided for a calibrating device for calibrating an extruded profile, wherein the lamella block includes a lamella structure, which has a plurality of lamellae that are spaced apart from each other by grooves and arranged in the longitudinal direction of the lamella block. The lamella structure has a variably designed division in the longitudinal direction of the lamella block. Further provided is a method for manufacturing the aforementioned lamella block, as well as a calibrating device, which includes a plurality of the lamella blocks mentioned above. Also provided is a system for additively fabricating the lamella blocks mentioned above, a corresponding computer program and a corresponding dataset.

Abstract: A fin block is provided for a calibrating device for the calibrating of an extruded profile. The fin block includes a fin structure, which has a plurality of fins which are spaced apart from one another by grooves and are arranged in longitudinal direction of the fin block, wherein the fins of the fin structure have a variable dimension in longitudinal direction of the fin block. Further, there is provided a method for the production of the above-mentioned fin block and a calibrating device, which includes a plurality of the above-mentioned fin blocks. Furthermore, there is provided a system for the additive manufacture of the above-mentioned fin block, a corresponding computer program and corresponding data set.

Abstract: A Lithographic apparatus and method of controlling a lithographic process. A substrate is provided and a photosensitive layer is provided on a main surface of the substrate. The substrate includes a base section and a mesa section. In the base section the main surface is in a base plane. The mesa section protrudes from the base plane. A radiation beam scans the photosensitive layer. A local dose applied to a partial area of the photosensitive layer by the radiation beam includes a base dose component and a correction dose component. The correction dose component is a function of a distance between the partial area and a transition between the base section and the mesa section and at least partly compensates an effect of a defocus, which results from a height difference between the mesa section and the base section, on a critical dimension in the partial area.

Abstract: Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

Abstract: Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

Abstract: Various embodiments include a method for checking a variable valve lift control of an internal combustion engine comprising: during operation of the internal combustion engine, detecting a rotational speed of the internal combustion engine; and measuring an intake pressure in the intake tract of the internal combustion engine corresponding to the detected rotational speed. The method further includes: defining a reference frequency dependent on the rotational speed of the internal combustion engine; defining a comparison frequency as a non-integral multiple of the reference frequency; determining amplitudes of oscillations of the intake pressure at the reference frequency and amplitudes of oscillations of the intake pressure at the comparison frequency; and evaluating a ratio of the determined amplitudes and the respective absolute values.

Abstract: Photoresist layers are exposed to an exposure beam by using an exposure tool assembly, wherein the photoresist layers coat semiconductor substrates and wherein for each exposure a current exposure parameter set is used that includes at least a defocus value and an exposure dose. The exposed photoresist layers are developed, wherein resist patterns are formed from the photoresist layers. Feature characteristics in the resist patterns and/or in substrate patterns derived from the resist patterns are measured. The current exposure parameter set is updated in response to deviations of the measured feature characteristics from target feature characteristics. De-corrected feature characteristics of hypothetical resist patterns are estimated, which would be formed without updating the exposure parameter set. In response to information obtained from the de-corrected feature characteristics the measurement strategy for the feature characteristics may be changed or the current exposure parameter set may be updated.

Abstract: A Lithographic apparatus and method of controlling a lithographic process. A substrate is provided and a photosensitive layer is provided on a main surface of the substrate. The substrate includes a base section and a mesa section. In the base section the main surface is in a base plane. The mesa section protrudes from the base plane. A radiation beam scans the photosensitive layer. A local dose applied to a partial area of the photosensitive layer by the radiation beam includes a base dose component and a correction dose component. The correction dose component is a function of a distance between the partial area and a transition between the base section and the mesa section and at least partly compensates an effect of a defocus, which results from a height difference between the mesa section and the base section, on a critical dimension in the partial area.

Abstract: An apparatus and a method for analysis of processing of a semiconductor wafer is disclosed which comprises gathering a plurality of items of processing data, applying at least one process model to the at least some of the plurality of items of processing data to derive at least one set of process results, comparing at least some of the derived sets of process results or at least some of the plurality of items of processing data with a process window, and outputting a set of comparison results based on the comparison of the derived sets of process results or the plurality of items of processing data with the process window.

Abstract: Photoresist layers are exposed to an exposure beam by using an exposure tool assembly, wherein the photoresist layers coat semiconductor substrates and wherein for each exposure a current exposure parameter set is used that includes at least a defocus value and an exposure dose. The exposed photoresist layers are developed, wherein resist patterns are formed from the photoresist layers. Feature characteristics in the resist patterns and/or in substrate patterns derived from the resist patterns are measured. The current exposure parameter set is updated in response to deviations of the measured feature characteristics from target feature characteristics. De-corrected feature characteristics of hypothetical resist patterns are estimated, which would be formed without updating the exposure parameter set. In response to information obtained from the de-corrected feature characteristics the measurement strategy for the feature characteristics may be changed or the current exposure parameter set may be updated.

Abstract: A method and apparatus for evaluating and controlling a semiconductor manufacturing process having a plurality of process steps in a process flow is described. The method comprises retrieving measurements of process step parameters from a process measurement database. The process step parameters comprise at least one of process step measurement data, process step context data or process step control data. The process step parameters are subsequently associated with one or more of the process steps.

Abstract: A method of manufacturing semiconductor devices includes defining a sampling plan that contains position information about metrology sites on process wafers. A first property of the process wafers is measured to obtain measurement values at measurement points, wherein a quantity of the measurement points per process wafer is at least tenfold a quantity of the metrology sites. A sampling model that includes at least a wafer model is updated on the basis of the measurement values. The sampling plan is updated on the basis of an assessment of deviations of the measurement values from a current sampling model.

Abstract: An apparatus and a method for analysis of processing of a semiconductor wafer is disclosed which comprises gathering a plurality of items of processing data, applying at least one process model to the at least some of the plurality of items of processing data to derive at least one set of process results, comparing at least some of the derived sets of process results or at least some of the plurality of items of processing data with a process window, and outputting a set of comparison results based on the comparison of the derived sets of process results or the plurality of items of processing data with the process window.

Abstract: An apparatus and a method for analysis of processing of a semiconductor wafer is disclosed which comprises gathering a plurality of items of processing data, applying at least one process model to the at least some of the plurality of items of processing data to derive at least one set of process results, comparing at least some of the derived sets of process results or at least some of the plurality of items of processing data with a process window, and outputting a set of comparison results based on the comparison of the derived sets of process results or the plurality of items of processing data with the process window.