Patents by Inventor Stefan CLARA

Stefan CLARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Covalent PPARG inverse-agonists
    Publication number: 20240109850
    Abstract: The present invention includes compounds of formula (I) and methods for its preparation and treatment of disorders with activated peroxisome preoliferator-activated receptor gamma (PPARG), particularly cancer.
    Type: Application
    Filed: August 31, 2023
    Publication date: April 4, 2024
    Applicants: Bayer Aktiengesellschaft, The Broad Institute, Inc., Dana-Farber Cancer Institute, Inc.
    Inventors: Knut EIS, Elisabeth POOK, Ulf BRÜGGEMEIER, Adelaide Clara F. A. DE LEMOS, Sven CHRISTIAN, Isabel Sophie JERCHEL-FURAU, Ulrike RAUH, Nico BRÄUER, Timo STELLFELD, Anders Roland FRIBERG, Christian LECHNER, Stefan KAULFUSS, Hanna MEYER, Charlotte Christine KOPITZ, Steven James FERRARA, Jonathan GOLDSTEIN, Matthew MEYERSON, Christopher LEMKE, Timothy A. LEWIS
  • Semiconductor devices, a fluid sensor and a method for forming a semiconductor device
    Patent number: 10461203
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: October 29, 2019
    Assignee: Infineon Technologie AG
    Inventors: Stefan Clara, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • SEMICONDUCTOR DEVICES, A FLUID SENSOR AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
    Publication number: 20180212085
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Application
    Filed: March 20, 2018
    Publication date: July 26, 2018
    Inventors: Stefan CLARA, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • Semiconductor devices, a fluid sensor and a method for forming a semiconductor device
    Patent number: 9941432
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: April 10, 2018
    Assignee: Infineon Technologies AG
    Inventors: Stefan Clara, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • SEMICONDUCTOR DEVICES, A FLUID SENSOR AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
    Publication number: 20160351739
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Application
    Filed: May 27, 2016
    Publication date: December 1, 2016
    Inventors: Stefan CLARA, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp