Patents by Inventor Stefan CLARA

Stefan CLARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10461203
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: October 29, 2019
    Assignee: Infineon Technologie AG
    Inventors: Stefan Clara, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • Publication number: 20180212085
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Application
    Filed: March 20, 2018
    Publication date: July 26, 2018
    Inventors: Stefan CLARA, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • Patent number: 9941432
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: April 10, 2018
    Assignee: Infineon Technologies AG
    Inventors: Stefan Clara, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • Publication number: 20160351739
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Application
    Filed: May 27, 2016
    Publication date: December 1, 2016
    Inventors: Stefan CLARA, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp