Patents by Inventor Stefan Cornelis Theodorus Van Der Sanden
Stefan Cornelis Theodorus Van Der Sanden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240004309Abstract: A method of monitoring a semiconductor manufacturing process. The method includes obtaining at least one first trained model being operable to derive local performance parameter data from high resolution metrology data, wherein the local performance parameter data describes a local component, or one or more local contributors thereto, of a performance metric and high resolution metrology data relating to at least one substrate having been subject to at least a part of the semiconductor manufacturing process. Local performance parameter data is determined from the high resolution metrology data using the first trained model. The first trained model is operable to determine the local performance parameter data as if it had been subject to an etch step on at least the immediately prior exposed layer, based on the high resolution metrology data including only metrology data performed prior to any such etch step.Type: ApplicationFiled: December 6, 2021Publication date: January 4, 2024Applicant: ASML NETHERLANDS B.V.Inventors: Hendrik Adriaan VAN LAARHOVEN, Alok VERMA, Roy ANUNCIADO, Hermanus Adrianus DILLEN, Stefan Cornelis Theodorus VAN DER SANDEN
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Patent number: 11782349Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: January 24, 2023Date of Patent: October 10, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20230168591Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: January 24, 2023Publication date: June 1, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erick Johannes Maria Wallerbos, Erick Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 11592753Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: April 7, 2022Date of Patent: February 28, 2023Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 11493851Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: GrantFiled: September 23, 2021Date of Patent: November 8, 2022Assignee: ASML Netherlands B.V.Inventors: Hakki Ergün Cekli, Xing Lan Liu, Stefan Cornelis Theodorus Van Der Sanden, Richard Johannes Franciscus Van Haren
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Publication number: 20220229373Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: April 7, 2022Publication date: July 21, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 11327407Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: November 24, 2020Date of Patent: May 10, 2022Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20220011681Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: ApplicationFiled: September 23, 2021Publication date: January 13, 2022Applicant: ASML Netherlands B.V.Inventors: Hakki Ergün CEKLI, Xing Lan Liu, Stefan Cornelis Theodorus VAN DER SANDEN, Richard Johannes Franciscus VAN HAREN
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Patent number: 11156923Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: GrantFiled: December 10, 2015Date of Patent: October 26, 2021Assignee: ASML Netherlands B.V.Inventors: Hakki Ergün Cekli, Xing Lan Liu, Stefan Cornelis Theodorus Van Der Sanden, Richard Johannes Franciscus Van Haren
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Patent number: 11003099Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.Type: GrantFiled: October 4, 2019Date of Patent: May 11, 2021Assignee: ASML Netherlands B.V.Inventors: Maurits Van Der Schaar, Murat Bozkurt, Patrick Warnaar, Stefan Cornelis Theodorus Van Der Sanden
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Publication number: 20210080836Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: November 24, 2020Publication date: March 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 10877381Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: September 28, 2017Date of Patent: December 29, 2020Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20200033741Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.Type: ApplicationFiled: October 4, 2019Publication date: January 30, 2020Applicant: ASML Netherlands B.VInventors: Maurits Van Der Schaar, Murat Bozkurt, Patrick Warnaar, Stefan Cornelis Theodorus Van Der Sanden
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Publication number: 20200019067Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: September 28, 2017Publication date: January 16, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cedric Desire GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 10437163Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.Type: GrantFiled: July 14, 2017Date of Patent: October 8, 2019Assignee: ASML Netherlands B.V.Inventors: Maurits Van Der Schaar, Murat Bozkurt, Patrick Warnaar, Stefan Cornelis Theodorus Van Der Sanden
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Publication number: 20180292761Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.Type: ApplicationFiled: December 10, 2015Publication date: October 11, 2018Applicant: ASML Netherlands B.V.Inventors: Hakki Ergün CEKLI, Xing Lan LIU, Stefan Cornelis Theodorus VAN DER SANDEN
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Patent number: 10025193Abstract: A lithographic apparatus applies a pattern repeatedly to target portions across a substrate. Prior to applying the pattern an alignment sensor measures positions of marks in the plane of the substrate and a level sensor measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while positioning the applied pattern using the positions measured by the alignment sensor and using the height deviations measured by the level sensor. The apparatus is further arranged to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on an intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.Type: GrantFiled: October 23, 2014Date of Patent: July 17, 2018Assignee: ASML NETHERLANDS B.V.Inventors: Hakki Ergün Cekli, Xing Lan Liu, Daan Maurits Slotboom, Wim Tjibbo Tel, Stefan Cornelis Theodorus Van Der Sanden, Richard Johannes Franciscus Van Haren
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Publication number: 20180017881Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.Type: ApplicationFiled: July 14, 2017Publication date: January 18, 2018Applicant: ASML Netherlands B.V.Inventors: Maurits VAN DER SCHAAR, Murat BOZKURT, Patrick WARNAAR, Stefan Cornelis Theodorus VAN DER SANDEN
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Patent number: 9753377Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.Type: GrantFiled: June 27, 2013Date of Patent: September 5, 2017Assignee: ASML NETHERLANDS B.V.Inventors: Hakki Ergun Cekli, Irina Lyulina, Manfred Gawein Tenner, Richard Johannes Franciscus Van Haren, Stefan Cornelis Theodorus Van Der Sanden
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Publication number: 20160334712Abstract: A lithographic apparatus applies a pattern repeatedly to target portions across a substrate. Prior to applying the pattern an alignment sensor measures positions of marks in the plane of the substrate and a level sensor measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while positioning the applied pattern using the positions measured by the alignment sensor and using the height deviations measured by the level sensor. The apparatus is further arranged to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on an intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.Type: ApplicationFiled: October 23, 2014Publication date: November 17, 2016Applicant: ASML Netherlands B.V.Inventors: Hakki Ergün CEKLI, Daan Maurits SLOTBOOM, Wim Tjibbo TEL, Stefan Cornelis Theodorus VAN DER SANDEN, Richard Johannes Franciscu VAN HAREN