Abstract: The invention relates to an optoelectronic component comprising an optoelectronic semiconductor chip having an emission surface which is located on an upper side and is designed to emit light into an emission space. The emission surface is laterally delimited by a cover which has: a first portion that annularly delimits the emission surface; and a second portion. The cover is designed in such a way that light incident on the second portion of the cover from outside the optoelectronic component is predominantly reflected. Light emitted from the emission surface towards the cover is predominantly deflected by the cover in such a way that it is not specularly reflected into the emission space.

Abstract: It is provided a window of a vehicle, optoelectronic circuits, in particular optoelectronic circuits for a window of a vehicle and a method for manufacturing a window of a vehicle including at least one optoelectronic component. It is further provided a display comprising at least one display module each comprising at least one optoelectronic array with a plurality of optoelectronic components, each optoelectronic component forming a pixel comprising at least one subpixel, in particular a ?LED. In addition, a method for manufacturing a display module comprising at least one optoelectronic array with a plurality of optoelectronic components, each optoelectronic component forming a pixel comprising at least one subpixel, in particular a ?LED, is provided.

Abstract: An assembly of electronic semiconductor components includes a carrier, at least one optoelectronic semiconductor component, a varactor component and a receiving element. The optoelectronic semiconductor component, the varactor component and the receiving element are arranged on the carrier. The optoelectronic semiconductor component and the varactor component are formed with the same semiconductor material. The optoelectronic semiconductor component has an active region configured for emitting electromagnetic radiation. The varactor component together with the receiving element forms a tunable resonant circuit. The resonant circuit is configured to draw energy for operating the optoelectronic semiconductor component from an alternating electromagnetic field.

Abstract: An assembly of electronic semiconductor components includes a carrier, at least one optoelectronic semiconductor component, a varactor component and a receiving element. The optoelectronic semiconductor component, the varactor component and the receiving element are arranged on the carrier. The optoelectronic semiconductor component and the varactor component are formed with the same semiconductor material. The optoelectronic semiconductor component has an active region configured for emitting electromagnetic radiation. The varactor component together with the receiving element forms a tunable resonant circuit. The resonant circuit is configured to draw energy for operating the optoelectronic semiconductor component from an alternating electromagnetic field.

Abstract: A headlamp includes a first semiconductor chip and a second semiconductor chip for generating light. The first and second semiconductor chips each include several pixels. A first optics is arranged to direct light from the first semiconductor chip with a first magnification into a base region. Via a second optics, light of the second semiconductor chip is directed into a bright region with a second magnification. The second magnification is between 0.3 times and 0.7 times the first magnification inclusive, so that the bright region is smaller than the base region. The bright region is within the base region.

Abstract: A headlamp includes a first semiconductor chip and a second semiconductor chip for generating light. The first and second semiconductor chips each include several pixels. A first optics is arranged to direct light from the first semiconductor chip with a first magnification into a base region. Via a second optics, light of the second semiconductor chip is directed into a bright region with a second magnification. The second magnification is between 0.3 times and 0.7 times the first magnification inclusive, so that the bright region is smaller than the base region. The bright region is within the base region.

Abstract: A headlamp includes a first semiconductor chip and a second semiconductor chip for generating light. The first and second semiconductor chips each include several pixels. A first optics is arranged to direct light from the first semiconductor chip with a first magnification into a base region. Via a second optics, light of the second semiconductor chip is directed into a bright region with a second magnification. The second magnification is between 0.3 times and 0.7 times the first magnification inclusive, so that the bright region is smaller than the base region. The bright region is within the base region.

Abstract: A method of operating an optoelectronic component, including a plurality of picture elements and a plurality of temperature sensors, wherein the picture elements are each configured to emit light, and the temperature sensors thermally conductively connect to the picture elements, the method including acquiring temperature values supplied by the temperature sensors; and controlling the picture elements in dependence on the acquired temperature values.

Abstract: A radiation-emitting component includes a radiation source including at least one semiconductor layer sequence that generates radiation; an optical waveguide device disposed downstream of the radiation source; and a conversion element for radiation conversion disposed downstream of the optical waveguide device, wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device, radiation is couplable from the optical waveguide device into the conversion element via an input surface, and the emission surface of the radiation source is larger than the input surface of the conversion element.

Abstract: An optoelectronic semiconductor component is specified that has a semiconductor chip having a main side, the main side comprising a plurality of emission fields that are arranged next to one another. The emission fields are individually and independently actuatable and, during operation, they are each used to couple radiation out of the semiconductor chip. The main side has reflective partitions mounted on it that are arranged between adjacent emission fields and at least partially surround the emission fields in a plan view of the main side. In addition, the main side has a conversion element mounted on it, having an underside, which faces the semiconductor chip, and an averted top. The partitions are formed from a different material from the semiconductor material of the semiconductor chip and jut out from the semiconductor chip in a direction away from the main side.

Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

Abstract: A method of operating an optoelectronic component, including a plurality of picture elements and a plurality of temperature sensors, wherein the picture elements are each configured to emit light, and the temperature sensors thermally conductively connect to the picture elements, the method including acquiring temperature values supplied by the temperature sensors; and controlling the picture elements in dependence on the acquired temperature values.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.

Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

Abstract: A radiation-emitting component includes a radiation source including at least one semiconductor layer sequence that generates radiation; an optical waveguide device disposed downstream of the radiation source; and a conversion element for radiation conversion disposed downstream of the optical waveguide device, wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device, radiation is couplable from the optical waveguide device into the conversion element via an input surface, and the emission surface of the radiation source is larger than the input surface of the conversion element.

Abstract: A method produces a plurality of optoelectronic modules, and includes: A) providing a metallic carrier assembly with a plurality of carrier units; B) applying a logic chip, each having at least one integrated circuit, to the carrier units; C) applying emitter regions that generate radiation, which can be individually electrically controlled; D) covering the emitter regions and the logic chips with a protective material; E) overmolding the emitter regions and the logic chips so that a cast body is formed, which joins the carrier units, the logic chips and the emitter regions to one another; F) removing the protective material and applying electrical conductor paths to the upper sides of the logic chips and to a cast body upper side; and G) dividing the carrier assembly into the modules.

Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

Abstract: An optoelectronic semiconductor component is specified that has a semiconductor chip having a main side, the main side comprising a plurality of emission fields that are arranged next to one another. The emission fields are individually and independently actuatable and, during operation, they are each used to couple radiation out of the semiconductor chip. The main side has reflective partitions mounted on it that are arranged between adjacent emission fields and at least partially surround the emission fields in a plan view of the main side. In addition, the main side has a conversion element mounted on it, having an underside, which faces the semiconductor chip, and an averted top. The partitions are formed from a different material from the semiconductor material of the semiconductor chip and jut out from the semiconductor chip in a direction away from the main side.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.

Abstract: An optoelectronic semiconductor component and an adaptive headlight are disclosed. In an embodiment an optoelectronic semiconductor component includes a carrier having a carrier top side and a carrier underside, a plurality of active zones, which are fitted at the carrier top side and which are designed for emitting radiation, electrical contact locations at the carrier underside, which are designed for electrically connecting the semiconductor component and a drive unit for electrically addressing the semiconductor component and for electrically driving the active zones, wherein the active zones are fitted in a regular grid at the carrier top side, wherein the grid has a grid pitch, wherein geometrical midpoints of radiation main sides of the active zones lie on grid points of the grid, and wherein a distance between the geometrical midpoints of marginal active zones and a closest edge of the carrier is at most 50% of the grid pitch.