Abstract: An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

Abstract: It is provided a window of a vehicle, optoelectronic circuits, in particular optoelectronic circuits for a window of a vehicle and a method for manufacturing a window of a vehicle including at least one optoelectronic component. It is further provided a display comprising at least one display module each comprising at least one optoelectronic array with a plurality of optoelectronic components, each optoelectronic component forming a pixel comprising at least one subpixel, in particular a ?LED. In addition, a method for manufacturing a display module comprising at least one optoelectronic array with a plurality of optoelectronic components, each optoelectronic component forming a pixel comprising at least one subpixel, in particular a ?LED, is provided.

Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Abstract: An assembly of electronic semiconductor components includes a carrier, at least one optoelectronic semiconductor component, a varactor component and a receiving element. The optoelectronic semiconductor component, the varactor component and the receiving element are arranged on the carrier. The optoelectronic semiconductor component and the varactor component are formed with the same semiconductor material. The optoelectronic semiconductor component has an active region configured for emitting electromagnetic radiation. The varactor component together with the receiving element forms a tunable resonant circuit. The resonant circuit is configured to draw energy for operating the optoelectronic semiconductor component from an alternating electromagnetic field.

Abstract: Described herein is a production system including a unit, wherein the unit includes a subunit (1.1) for continuous manufacture of formulations. The subunit includes a combination of a small-volume process mixer and a buffer tank, means of feeding defined amounts of feedstocks into the process mixer, a measurement unit for ascertaining properties of a formulation manufactured in the process mixer, an evaluation unit for determining a deviation of properties of the formulation manufactured in the process mixer from the properties of a predefined target state, and a unit for adjusting the feed of feedstocks in view of the deviations. Also described herein is a process for manufacturing formulations.

Abstract: The present invention relates to a production system for manufacturing of formulations, comprising a unit (1). The unit (1) includes a subunit (1.1) which includes a combination of a process mixer and a buffer tank, means of feeding defined amounts of feedstocks into the process mixer, a measurement unit for ascertaining properties of a part-batch of a formulation manufactured in the process mixer, an evaluation unit for determining a deviation of properties of the part-batches manufactured in the process mixer from the properties of a predefined target state, and a unit for adjusting the feed of feedstocks in view of the deviations. The present invention also relates to a process for manufacturing formulations.

Abstract: Provided is a measuring system (1), which comprises a sender unit (10) with at least one individually operable LED lighting unit (12) with a luminous area which has a characteristic longitudinal extent (107) of less than or equal to 100 ?m and/or a surface area of less than or equal to 104 ?m2, wherein the LED lighting unit (12) is configured to emit at least one light pulse as a sender signal (11) during operation, and comprises the one receiver unit (20) with at least one detector unit (22) for receiving a return signal (21), which comprises at least a part of the sender signal (11) reflected by an external object. Furthermore, use of at least one individually operable LED lighting unit as a sender unit in a measuring system, a method for operating a measuring system and a lighting source having a measuring system are provided.

Abstract: A lighting device includes a pixel array of light-emitting pixels arranged next to one another. The pixel array includes light-emitting pixels with different pixel shapes.

Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.

Abstract: An assembly of electronic semiconductor components includes a carrier, at least one optoelectronic semiconductor component, a varactor component and a receiving element. The optoelectronic semiconductor component, the varactor component and the receiving element are arranged on the carrier. The optoelectronic semiconductor component and the varactor component are formed with the same semiconductor material. The optoelectronic semiconductor component has an active region configured for emitting electromagnetic radiation. The varactor component together with the receiving element forms a tunable resonant circuit. The resonant circuit is configured to draw energy for operating the optoelectronic semiconductor component from an alternating electromagnetic field.

Abstract: An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

Abstract: An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular ?LEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

Abstract: An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Abstract: Described herein is a modular production system for the production of formulations, the module production system including a first unit for the production of formulations and a second unit for the receipt and removal from storage of piece goods and loading units and for the provision of piece goods. Also described herein is a process for producing formulations using the modular production system.

Abstract: An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Abstract: An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Abstract: Optoelectronic radiation device, in particular for generating and emitting health-promoting and regenerative radiation, comprising: at least one or more optoelectronic radiation sources configured to generate infrared radiation, and at least one optoelectronic radiation source for generating white light, wherein the infrared radiation is in an infrared spectral range between 600 nm and 900 nm.

Abstract: An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

Abstract: A headlamp includes a first semiconductor chip and a second semiconductor chip for generating light. The first and second semiconductor chips each include several pixels. A first optics is arranged to direct light from the first semiconductor chip with a first magnification into a base region. Via a second optics, light of the second semiconductor chip is directed into a bright region with a second magnification. The second magnification is between 0.3 times and 0.7 times the first magnification inclusive, so that the bright region is smaller than the base region. The bright region is within the base region.

Abstract: A headlamp includes a first semiconductor chip and a second semiconductor chip for generating light. The first and second semiconductor chips each include several pixels. A first optics is arranged to direct light from the first semiconductor chip with a first magnification into a base region. Via a second optics, light of the second semiconductor chip is directed into a bright region with a second magnification. The second magnification is between 0.3 times and 0.7 times the first magnification inclusive, so that the bright region is smaller than the base region. The bright region is within the base region.