Abstract: A stacked sensor device includes a micro electromechanical system, MEMS, pressure sensor including a pressure sensor substrate having a recess formed therein, a flexible MEMS structure covering the recess, thereby forming a hermetic chamber within the pressure sensor substrate, and pressure sensing means for detecting a deflection of the flexible MEMS structure. The stacked sensor device further includes a gas sensor including gas sensing means for detecting a property of an ambient gas, the gas sensor being arranged on a standoff above the pressure sensor, such that a cavity is formed by the pressure sensor, the standoff and the gas sensor, and an opening that couples the cavity to the ambient gas.

Abstract: In accordance with an embodiment, a semiconductor device includes: a radiator comprising a radiation layer configured to radiate an electromagnetic wave; a detector comprising a detection layer configured to detect the electromagnetic wave; a substrate; and an interface layer arranged between the radiator or the detector and the substrate, where a thermal conductivity of the radiator or the detector is different from a thermal conductivity of the interface layer.

Abstract: A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.

Abstract: An IR (infrared) radiation source includes a sealed cavity structure enclosing a vacuum chamber having a low atmospheric pressure, wherein the sealed cavity structure includes a thermally and electrically insulating material for enclosing the vacuum chamber, heating filaments extending in the vacuum chamber between opposing electrode regions at opposing wall regions of the vacuum chamber, wherein the heating filaments are electrically connected in parallel, and wherein the heating filaments and the electrode regions have a highly electrically conductive material, and an optical isolation structure adjacent to the vacuum chamber for optically confining the IR radiation and providing a predominant propagation direction of the IR radiation.

Abstract: A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.