Patents by Inventor Stefan Hirscher

Stefan Hirscher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7376512
    Abstract: The present invention relates to a method for determining an optimal absorber stack geometry of a lithographic reflection mask comprising a reflection layer and a patterned absorber stack provided on the reflection layer, the absorber stack having a buffer layer and an absorber layer. The method is based on simulating aerial images for different absorber stack geometries in order to determine process windows corresponding to the absorber stack geometries. The optimal absorber stack geometry is identified by the maximum process window size. The invention further relates to a method for fabricating a lithographic reflection mask and to a lithographic reflection mask.
    Type: Grant
    Filed: August 8, 2006
    Date of Patent: May 20, 2008
    Assignee: Infineon Technologies AG
    Inventors: Stefan Hirscher, Frank-Michael Kamm
  • Publication number: 20060275675
    Abstract: The present invention relates to a method for determining an optimal absorber stack geometry of a lithographic reflection mask comprising a reflection layer and a patterned absorber stack provided on the reflection layer, the absorber stack having a buffer layer and an absorber layer. The method is based on simulating aerial images for different absorber stack geometries in order to determine process windows corresponding to the absorber stack geometries. The optimal absorber stack geometry is identified by the maximum process window size. The invention further relates to a method for fabricating a lithographic reflection mask and to a lithographic reflection mask.
    Type: Application
    Filed: August 8, 2006
    Publication date: December 7, 2006
    Inventors: Stefan Hirscher, Frank-Michael Kamm
  • Patent number: 7094507
    Abstract: The present invention relates to a method for determining an optimal absorber stack geometry of a lithographic reflection mask comprising a reflection layer and a patterned absorber stack provided on the reflection layer, the absorber stack having a buffer layer and an absorber layer. The method is based on simulating aerial images for different absorber stack geometries in order to determine process windows corresponding to the absorber stack geometries. The optimal absorber stack geometry is identified by the maximum process window size. The invention further relates to a method for fabricating a lithographic reflection mask and to a lithographic reflection mask.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: August 22, 2006
    Assignee: Infineon Technologies AG
    Inventors: Stefan Hirscher, Frank-Michael Kamm
  • Publication number: 20060095208
    Abstract: The present invention relates to a method for determining an optimal absorber stack geometry of a lithographic reflection mask comprising a reflection layer and a patterned absorber stack provided on the reflection layer, the absorber stack having a buffer layer and an absorber layer. The method is based on simulating aerial images for different absorber stack geometries in order to determine process windows corresponding to the absorber stack geometries. The optimal absorber stack geometry is identified by the maximum process window size. The invention further relates to a method for fabricating a lithographic reflection mask and to a lithographic reflection mask.
    Type: Application
    Filed: October 29, 2004
    Publication date: May 4, 2006
    Applicant: Infineon Technologies AG
    Inventors: Stefan Hirscher, Frank-Michael Kamm