Patents by Inventor Stefan Hunsche

Stefan Hunsche has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240126181
    Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
    Type: Application
    Filed: November 16, 2023
    Publication date: April 18, 2024
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
  • Patent number: 11822255
    Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: November 21, 2023
    Assignee: ASML Netherlands B.V.
    Inventors: Abraham Slachter, Stefan Hunsche, Wim Tjibbo Tel, Anton Bernhard Van Oosten, Koenraad Van Ingen Schenau, Gijsbert Rispens, Brennan Peterson
  • Publication number: 20230333481
    Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
    Type: Application
    Filed: June 9, 2023
    Publication date: October 19, 2023
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Hans VAN DER LAAN, Wim Tjibbo TEL, Marinus JOCHEMSEN, Stefan HUNSCHE
  • Patent number: 11720029
    Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
    Type: Grant
    Filed: October 8, 2021
    Date of Patent: August 8, 2023
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Scott Anderson Middlebrooks, Markus Gerardus Martinus Maria Van Kraaij, Adrianus Cornelis Matheus Koopman, Stefan Hunsche, Willem Marie Julia Marcel Coene
  • Patent number: 11681229
    Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: June 20, 2023
    Assignee: ASML Netherlands B.V.
    Inventors: Hans Van Der Laan, Wim Tjibbo Tel, Marinus Jochemsen, Stefan Hunsche
  • Patent number: 11669020
    Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: June 6, 2023
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Tanbir Hasan, Vivek Kumar Jain, Stefan Hunsche, Bruno La Fontaine
  • Publication number: 20230076218
    Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.
    Type: Application
    Filed: February 18, 2021
    Publication date: March 9, 2023
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Koenraad VAN INGEN SCHENAU, Abraham SLACHTER, Vadim Yourievich TIMOSHKOV, Marleen KOOIMAN, Marie-Claire VAN LARE, Hermanus Adrianus DILLEN, Stefan HUNSCHE, Luis Alberto Colina Sant COLINA, Aiqin JIANG, Fuming WANG, Sudharshanan RAGHUNATHAN
  • Publication number: 20220327364
    Abstract: Systems and methods for predicting substrate geometry associated with a patterning process are described. Input information including geometry information and/or process information for a pattern is received and, using a machine learning prediction model, multi-dimensional output substrate geometry is predicted. The multi-dimensional output information may include pattern probability images. A stochastic edge placement error band and/or a stochastic failure rate may be predicted. The input information can include simulated aerial images, simulated resist images, target substrate dimensions, and/or data from a lithography apparatus associated with device manufacturing. Different aerial images may correspond to different heights in resist layers associated with the patterning process, for example.
    Type: Application
    Filed: July 31, 2020
    Publication date: October 13, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Stefan HUNSCHE, Fuming WANG, Ya LUO, Pioter NIKOLSKI
  • Patent number: 11443083
    Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: September 13, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Jing Su, Yi Zou, Chenxi Lin, Stefan Hunsche, Marinus Jochemsen, Yen-Wen Lu, Lin Lee Cheong
  • Publication number: 20220277116
    Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.
    Type: Application
    Filed: May 13, 2022
    Publication date: September 1, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jing SU, Yi Zou, Chenxi Lin, Stefan Hunsche, Marinus Jochemsen, Yen-Wen Lu, Lin Lee Cheong
  • Publication number: 20220187713
    Abstract: A method for training a machine learning model configured to predict a substrate image corresponding to a printed pattern of a substrate as measured via a metrology tool. The method involves obtaining a training data set including (i) metrology data of the metrology tool used to measure the printed pattern of the substrate, and (ii) a representation of a mask pattern employed for imaging the printed pattern on the substrate; and training, based on the training data set, a machine learning model to predict the substrate image of the substrate as measured by the metrology tool such that a cost function is improved, wherein the cost function includes a relationship between the predicted substrate image and the metrology data.
    Type: Application
    Filed: March 26, 2020
    Publication date: June 16, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Adrianus Cornelis Matheus KOOPMAN, Markus Gerardus Martinus Maria VAN KRAAIJ, Maxim PISARENCO, Stefan HUNSCHE
  • Publication number: 20220147665
    Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.
    Type: Application
    Filed: January 28, 2022
    Publication date: May 12, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Stefan Hunsche, Venugopal Vellanki
  • Patent number: 11238189
    Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: February 1, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Stefan Hunsche, Venugopal Vellanki
  • Publication number: 20220026811
    Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
    Type: Application
    Filed: October 8, 2021
    Publication date: January 27, 2022
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Markus Gerardus Martinus Maria Van Kraaij, Adrianus Cornelis Matheus Koopman, Stefan Hunsche, Willem Marie Julia Marcel Coene
  • Publication number: 20210356874
    Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
    Type: Application
    Filed: July 30, 2021
    Publication date: November 18, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
  • Patent number: 11143970
    Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: October 12, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Markus Gerardus Martinus Maria Van Kraaij, Adrianus Cornelis Matheus Koopman, Stefan Hunsche, Willem Marie Julia Marcel Coene
  • Patent number: 11126093
    Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: September 21, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Richard Johannes Franciscus Van Haren, Reiner Maria Jungblut, Leon Paul Van Dijk, Willem Seine Christian Roelofs, Wim Tjibbo Tel, Stefan Hunsche, Maurits Van Der Schaar
  • Publication number: 20210255548
    Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.
    Type: Application
    Filed: May 6, 2021
    Publication date: August 19, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Venugopal VELLANKI, Vivek Kumar JAIN, Stefan HUNSCHE
  • Publication number: 20210241449
    Abstract: A method for correcting metrology data of a patterning process. The method includes obtaining (i) metrology data of a substrate subjected to the patterning process and (ii) a quality metric (e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing a correlation between the quality metric and the metrology data; and determining a correction to the metrology data based on the correlation between the quality metric and the metrology data.
    Type: Application
    Filed: August 14, 2019
    Publication date: August 5, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Fuming WANG, Stefan HUNSCHE, Wei FANG
  • Patent number: 11079687
    Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: August 3, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Abraham Slachter, Stefan Hunsche, Wim Tjibbo Tel, Anton Bernhard Van Oosten, Koenraad Van Ingen Schenau, Gijsbert Rispens, Brennan Peterson