Patents by Inventor Stefan IIIek

Stefan IIIek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240347670
    Abstract: In an embodiment a method includes providing a growth substrate layer, depositing a first doped [(AlxGa1-x)yIn1-y]zP1-z carrier transport layer on the substrate layer with x in a range of [0.5;1] along a growth direction, and depositing an active region along the growth direction, the active region for generating radiation and comprising a plurality of alternating [(AlaGa1-a)bIn1-b]cP1-c quantum well layers and [(AldGa1-d)eIn1-e]fP1-f barrier layers, wherein a is in a range of [0;0.5] and d is in a range of [0.45;1.0], wherein depositing of at least one of the barrier layer and/or the quantum well layer comprises doping with a dopant having a concentration in a range of 1e15 atoms/cm3 to 5e17 atoms/cm3, wherein the dopant is selected from at least one of the group consisting of Mg, Zn, Te and Si or depositing a second doped carrier transport [(AlxGa1-x)yIn1-y]zP1-z layer with x in a range of [0.45;1] along the growth direction.
    Type: Application
    Filed: August 16, 2022
    Publication date: October 17, 2024
    Inventors: Christoph Klemp, Stefan IIIek, Ines Pietzonka, Andreas Biebersdorf, Xue Wang