Abstract: A semiconductor device includes a vertical power transistor having a plurality of power transistor cells. Each power transistor cell includes a source region at a first main surface of a semiconductor substrate, a drain region at a second main surface of the semiconductor substrate opposite the first main surface, a gate trench extending into the semiconductor substrate from the first main surface, a gate electrode in the gate trench and comprising doped polycrystalline silicon, and a dielectric material separating the gate electrode from the semiconductor substrate. An upper central part of each of the gate electrodes of the power transistor cells is occupied by a metal silicide region that adjoins the doped polycrystalline silicon. A method of producing the semiconductor device is also described.

Abstract: A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; a trench formed in a first main surface of the semiconductor substrate; a field plate electrode in the trench and reaching a same level as the first main surface of the semiconductor substrate; an insulating material that separates the field plate electrode from the semiconductor substrate; and a material embedded in the field plate electrode. The field plate electrode is made of a different material than the material embedded in the field plate electrode. The trench adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. Additional device embodiments and methods of producing the semiconductor device are also described.

Abstract: A grinding robot for grinding an electrically conducting workpiece. The grinding robot includes a grinding wheel, an actuation device for actuating grinding wheel, and a control system. The grinding wheel including an undulated tool receptacle which defines an axis of rotation about which the grinding wheel can rotate during grinding, and a head which is rotationally symmetrical with respect to the axis of rotation, and which contains abrasive material and has a grinding surface which is in contact with workpiece during grinding. The grinding wheel also includes a measuring and transmission unit and at least one conductor strand pair with two conductor strands which are electrically insulated from one another. The conductor strands are embedded in the rotationally symmetrical head and extend from the grinding surface of the head into the interior of the head and are electrically connected with measuring and transmission unit.

Abstract: A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.

Abstract: A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.

Abstract: A multi-chip device is provided. The multi-chip device includes a first chip, a second chip mounted on the first chip, and a hardened printed or sprayed electrically conductive material forming a sintered electrically conductive interface between the first chip and the second chip.

Abstract: A multi-chip device is provided. The multi-chip device includes a first chip, a second chip mounted on the first chip, and a hardened printed or sprayed electrically conductive material forming a sintered electrically conductive interface between the first chip and the second chip.

Abstract: A grinding robot for grinding an electrically conducting workpiece. The grinding robot includes a grinding wheel, an actuation device for actuating grinding wheel, and a control system. The grinding wheel including an undulated tool receptacle which defines an axis of rotation about which the grinding wheel can rotate during grinding, and a head which is rotationally symmetrical with respect to the axis of rotation, and which contains abrasive material and has a grinding surface which is in contact with workpiece during grinding. The grinding wheel also includes a measuring and transmission unit and at least one conductor strand pair with two conductor strands which are electrically insulated from one another. The conductor strands are embedded in the rotationally symmetrical head and extend from the grinding surface of the head into the interior of the head and are electrically connected with measuring and transmission unit.