Abstract: The present invention relates to a method for monitoring the effect of an environmental factor on the proteome of a cell. Furthermore, cell populations are provided that comprise multiple cells each comprising an inserted tag sequence in an intron of said cell, wherein the tag is inserted in-frame with the preceding exonic sequence and wherein the intron into which the tag is inserted is different between cells.

Abstract: The present invention relates to compounds with the ability to stimulate/induce ubiquitination of a target protein/target proteins. The compounds of the present invention may stimulate/induce ubiquitination of a target protein/target proteins; i.e. via degradation of a target protein/target proteins by the cullin-RING ubiquitin ligase (CRL). Such target protein/target proteins may be proteins involved in diseases, like cancer, metabolic disorder, infectious disease and/or neurological disorder. The invention also relates to the compounds and composition for use as medicaments as well as pharmaceutical compositions comprising these compounds. Particularly, the compounds of the present invention may degrade proteins associated with cancer, metabolic disorder, infectious disease and/or neurological disorder.

Abstract: A qubit device includes first and second linear qubit arrays. Each qubit array includes a semiconductor substrate, control gates configured to define a single row of quantum dots along the substrate, and nanomagnets distributed along the row of quantum dots such that a nanomagnet is arranged at every other pair of quantum dots of the row of quantum dots. Each nanomagnet has an out-of-plane magnetization with respect to the substrate, where the rows of the first and second arrays extend in a common row direction and are separated along a direction transverse to the row direction. The qubit device further includes superconducting resonators connecting pairs of quantum dots between the first and second arrays. Each pair of quantum dots in the first array is configured to couple with a superconducting resonator of the first set to connect with a different pair of quantum dots of the second array.

Abstract: A method for processing a semiconductor device with two closely space gates comprises forming a template structure, wherein the template structure includes at least one sub-structure having a dimension less than the CD. The method further comprises forming a gate layer on and around the template structure. Then, the method comprises removing the part of the gate layer formed on the template structure, and patterning the remaining gate layer into a gate structure including the two gates. Further, the method comprises selectively removing the template structure, wherein the spacing between the two gates is formed by the removed sub-structure.

Abstract: The present invention relates to compounds with the ability to stimulate/induce ubiquitination of a target protein/target proteins. The compounds of the present invention may stimulate/induce ubiquitination of a target protein/target proteins; i.e. via degradation of a target protein/target proteins by the cullin-RING ubiquitin ligase (CRL). Such target protein/target proteins may be proteins involved in diseases, like cancer, metabolic disorder, infectious disease and/or neurological disorder. The invention further relates to a method for identifying/obtaining and/or testing a compound able to induce ubiquitination of a target protein/target proteins. The invention also relates to the compounds and composition for use as medicaments as well as pharmaceutical compositions comprising these compounds. Particularly, the compounds of the present invention may degrade proteins associated with cancer, metabolic disorder, infectious disease and/or neurological disorder.

Abstract: According to an aspect of the present inventive concept there is provided a qubit device comprising: a semiconductor substrate layer; a set of control gates configured to define a row of electrostatically confined quantum dots along the substrate layer, each quantum dot being suitable for holding a qubit; and a set of nanomagnets arranged in a row over the substrate layer such that a nanomagnet is arranged above every other quantum dot of the row of quantum dots, wherein each nanomagnet has an out-of-plane magnetization with respect to the substrate layer and wherein every other quantum dot is subjected to an out-of-plane magnetic field generated by a respective nanomagnet, such that a qubit spin resonance frequency of every other quantum dot is shifted with respect to an adjacent quantum dot of the row of quantum dots

Abstract: A method for processing a semiconductor device with two closely space gates comprises forming a template structure, wherein the template structure includes at least one sub-structure having a dimension less than the CD. The method further comprises forming a gate layer on and around the template structure. Then, the method comprises removing the part of the gate layer formed on the template structure, and patterning the remaining gate layer into a gate structure including the two gates. Further, the method comprises selectively removing the template structure, wherein the spacing between the two gates is formed by the removed sub-structure.

Abstract: The present invention relates to the combination of an antiandrogen with a vitamin K antagonist or with a ?-glutamyl carboxylase inhibitor for use in the treatment or prevention of an androgen receptor positive cancer, such as prostate cancer, or a hyperactive androgen receptor signaling disease/disorder. The invention also relates to a vitamin K antagonist or a ?-glutamyl carboxylase inhibitor for use in resensitizing an antiandrogen-resistant prostate cancer to the treatment with an antiandrogen. The invention further provides a pharmaceutical composition comprising an antiandrogen, a vitamin K antagonist or a ?-glutamyl carboxylase inhibitor, and a pharmaceutically acceptable excipient.

Abstract: The present invention relates to lactam derivatives of formula (I) for use as medicaments as well as pharmaceutical compositions comprising these compounds, particularly for use as inhibitors of the bromodomain-containing protein TAF1 (i.e., transcription initiation factor TFIID subunit 1) and for use in the treatment or prevention of cancer.

Abstract: A method for manufacturing a dual work function semiconductor device includes forming a first silicon oxide layer on a substrate and forming a first hafnium-containing dielectric material layer on the first silicon oxide layer. The method further includes forming an aluminum-containing dielectric material layer on the first hafnium-containing dielectric material layer and performing a thermal treatment to intermix the silicon oxide layer, the first hafnium-containing dielectric material layer and the aluminum-containing dielectric material layers. This results in an intermixing dielectric layer containing hafnium, aluminum, silicon, and oxygen. The method further includes forming a first metal-containing conductive layer on the intermixing dielectric layer and patterning the first metal-containing conductive layer and the intermixing dielectric layer, thereby forming a first gate stack in a first region.

Abstract: The present invention relates to the combination of a BRD4 inhibitor with an antifolate (particularly an MTHFD1 inhibitor) for use in the treatment or prevention of cancer. The invention also relates to an antifolate (particularly an MTHFD1 inhibitor) for use in resensitizing a BRD4 inhibitor-resistant cancer to the treatment with a BRD4 inhibitor. The invention further provides a pharmaceutical composition comprising a BRD4 inhibitor, an antifolate (particularly an MTHFD1 inhibitor), and a pharmaceutically acceptable excipient. Moreover, the invention provides a method of assessing the susceptibility or responsiveness of a subject to the treatment with a BRD4 inhibitor, wherein the subject has been diagnosed as suffering from cancer or is suspected of suffering from cancer, the method comprising determining the level of nuclear folate and/or the level of expression of MTHFD1 in a sample obtained from the subject.

Abstract: The present invention relates to lactam derivatives of formula (I) for use as medicaments as well as pharmaceutical compositions comprising these compounds, particularly for use as inhibitors of the bromodomain-containing protein TAF1 (i.e., transcription initiation factor TFIID subunit 1) and for use in the treatment or prevention of cancer.

Abstract: The present invention relates to the combination of an antiandrogen with a vitamin K antagonist or with a ?-glutamyl carboxylase inhibitor for use in the treatment or prevention of an androgen receptor positive cancer, such as prostate cancer, or a hyperactive androgen receptor signaling disease/disorder. The invention also relates to a vitamin K antagonist or a ?-glutamyl carboxylase inhibitor for use in resensitizing an antiandrogen-resistant prostate cancer to the treatment with an antiandrogen. The invention further provides a pharmaceutical composition comprising an antiandrogen, a vitamin K antagonist or a ?-glutamyl carboxylase inhibitor, and a pharmaceutically acceptable excipient.

Abstract: The invention refers to BTBD9 binders and gephyrin binders for medical use and in particular an artemisinin compound of general formula I for use in the treatment of a diabetes patient, as well as a method of identifying suitable lead candidates.

Abstract: The invention refers to BTBD9 binders and gephyrin binders for medical use and in particular an artemisinin compound of general formula I for use in the treatment of a diabetes patient, as well as a method of identifying suitable lead candidates.

Abstract: A method for manufacturing a dual work function semiconductor device includes forming a first silicon oxide layer on a substrate and forming a first hafnium-containing dielectric material layer on the first silicon oxide layer. The method further includes forming an aluminum-containing dielectric material layer on the first hafnium-containing dielectric material layer and performing a thermal treatment to intermix the silicon oxide layer, the first hafnium-containing dielectric material layer and the aluminum-containing dielectric material layers. This results in an intermixing dielectric layer containing hafnium, aluminum, silicon, and oxygen. The method further includes forming a first metal-containing conductive layer on the intermixing dielectric layer and patterning the first metal-containing conductive layer and the intermixing dielectric layer, thereby forming a first gate stack in a first region.

Abstract: A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function.

Abstract: A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function.

Abstract: A method for manufacturing a dual work function device is disclosed. In one aspect, the process includes a first and second region in a substrate. The method includes forming a first transistor in the first region which has a first work function. Subsequently, a second transistor is formed in the second region having a different work function. The process of forming the first transistor includes providing a first gate dielectric stack having a first gate dielectric layer and a first gate dielectric capping layer on the first gate dielectric layer, performing a thermal treatment to modify the first gate dielectric stack, the modified first gate dielectric stack defining the first work function, providing a first metal gate electrode layer on the modified first gate dielectric stack, and patterning the first metal gate electrode layer and the modified first gate dielectric stack.

Abstract: A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function.