Abstract: An apparatus for temporary bonding first and second wafers includes, a first coating chamber configured to apply a first adhesive layer upon a first surface of a first wafer; a second coating chamber configured to apply a second adhesive layer upon a first surface of a second wafer; a curing chamber configured to cure the first adhesive layer of the first wafer; a bonder module comprising an upper chuck assembly and a lower chuck assembly arranged below and opposite the upper chuck assembly. The upper chuck assembly is configured to hold the first wafer so that its first surface with the cured first adhesive layer faces down. The lower chuck assembly is configured to hold the second wafer so that the second adhesive layer faces up and is opposite to the cured first adhesive layer. The lower chuck assembly is configured to move upwards and thereby to bring the second adhesive layer in contact with the cured first adhesive layer.

Abstract: A method for temporary bonding first and second wafers includes, applying a first adhesive layer upon a first surface of a first wafer and then curing the first adhesive layer. Next, applying a second adhesive layer upon a first surface of a second wafer. Next, inserting the first wafer into a bonder module and holding the first wafer by an upper chuck assembly so that its first surface with the cured first adhesive layer faces down. Next, inserting the second wafer into the bonder module and placing the second wafer upon a lower chuck assembly so that the second adhesive layer faces up and is opposite to the first adhesive layer. Next, moving the lower chuck assembly upwards and bringing the second adhesive layer in contact with the cured first adhesive layer, and then curing the second adhesive layer.

Abstract: A method for temporary bonding first and second wafers includes, applying a first adhesive layer upon a first surface of a first wafer and then curing the first adhesive layer. Next, applying a second adhesive layer upon a first surface of a second wafer. Next, inserting the first wafer into a bonder module and holding the first wafer by an upper chuck assembly so that its first surface with the cured first adhesive layer faces down. Next, inserting the second wafer into the bonder module and placing the second wafer upon a lower chuck assembly so that the second adhesive layer faces up and is opposite to the first adhesive layer. Next, moving the lower chuck assembly upwards and bringing the second adhesive layer in contact with the cured first adhesive layer, and then curing the second adhesive layer.

Abstract: By means of the device for coating a substrate (2; 102) according to the present invention, a homogeneous coating of the substrate (2; 102) can be achieved. The device comprises a holding and rotating means for holding and rotating the substrate (2; 102) about an axis (A). A disk (3) is provided below the substrate (2; 102). Said disk (3) is arranged coaxially with respect to the substrate (2; 102), has at least the same diameter as the substrate (2; 102) and is able to rotate synchronously with the substrate (2; 102). By means of the disk (3), air swirls at the edge of and below the substrate (2; 102) are avoided during coating of the substrate (2; 102). Thus, it is possible to obtain a homogeneous coating. For being able to load and unload a substrate (2; 102) into and out of the device by means of a conventional gripper system (6), the distance between substrate (2; 102) and disk (3) is increased during loading and unloading.

Abstract: By means of the device for coating a substrate (2; 102) according to the present invention, a homogeneous coating of the substrate (2; 102) can be achieved. The device comprises a holding and rotating means for holding and rotating the substrate (2; 102) about an axis (A). A disk (3) is provided below the substrate (2; 102). Said disk (3) is arranged coaxially with respect to the substrate (2; 102), has at least the same diameter as the substrate (2; 102) and is able to rotate synchronously with the substrate (2; 102). By means of the disk (3), air swirls at the edge of and below the substrate (2; 102) are avoided during coating of the substrate (2; 102). Thus, it is possible to obtain a homogeneous coating. For being able to load and unload a substrate (2; 102) into and out of the device by means of a conventional gripper system (6), the distance between substrate (2; 102) and disk (3) is increased during loading and unloading.

Abstract: Process for producing an SPM sensor having a holding element, a cantilever and a sensor tip which projects out of the surface of the cantilever and is delimited by three surfaces. According to the process, the starting material used is a (100)-silicon wafer. The main patterning process steps are carried out on the wafer back surface, so that an SPM sensor can be produced at low cost in a single batch run.

Abstract: SPM sensor comprising a holding element, cantilever and a sensor tip, which projects out of the surface of the cantilever, at the free end of the cantilever, at least the cantilever and the three-surface sensor tip consisting of monocrystalline (100)-silicon, and a process for producing this sensor. The process is distinguished by inexpensive process steps, substantially wet-chemical etching steps. The result is that an SPM sensor with a rectangular cantilever arm having a tip which may or may not project beyond the free end is produced from a single piece.

Abstract: A micro device comprising a SU-8 photoresist layer adhered to a thin layer of, for example, silicon nitride, silicon oxide, metal, and diamond. The SU-8 layer is clamped on the thin layer by using an under-etching technique.

Abstract: A micro device comprising a SU-8 photoresist layer adhered to a thin layer of, for example, silicon nitride, silicon oxide, metal, and diamond. The SU-8 layer is clamped on the thin layer by using an under-etching technique.

Abstract: Semiconductor components in a wafer assembly, in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer. The holder connects the respective component to the frame on one side and has a desired breaking point. The desired breaking point is designed as a V-shaped groove, the surfaces of which form crystal planes. According to the method, the patterning for production of the holder takes place on the wafer back surface, with subsequent wet chemical anisotropic etching of the V-groove. In this way, the holder is produced independently of the processing of the wafer front surface, and when the semiconductor component is removed a defined broken edge is formed without there being any risk of the semiconductor component being damaged.

Abstract: Semiconductor components in a wafer assembly, in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer. The holder connects the respective component to the frame on one side and has a desired breaking point. The desired breaking point is designed as a V-shaped groove, the surfaces of which form crystal planes. According to the method, the patterning for production of the holder takes place on the wafer back surface, with subsequent wet chemical anisotropic etching of the V-groove. In this way, the holder is produced independently of the processing of the wafer front surface, and when the semiconductor component is removed a defined broken edge is formed without there being any risk of the semiconductor component being damaged.

Abstract: SPM sensor comprising a holding element, cantilever and a sensor tip, which projects out of the surface of the cantilever, at the free end of the cantilever, at least the cantilever and the three-surface sensor tip consisting of monocrystalline (100)-silicon, and a process for producing this sensor. The process is distinguished by inexpensive process steps, substantially wet-chemical etching steps. The result is that an SPM sensor with a rectangular cantilever arm having a tip which may or may not project beyond the free end is produced from a single piece.

Abstract: An SPM sensor having a cantilever, a holding element at one end of the cantilever and a sensor tip at the other end of the cantilever, wherein the holding element is made from a photoresist and the cantilever and/or the tip are made from another material. The photoresist is preferably SU-8, and the other material for the cantilever and/or the tip is preferably silicon, a silicon compound, metals and mixtures thereof. The production of a frame having a plurality of the SPM sensors, wherein both the frame and the holders for the individual SPM sensors and at least the holding element consist of SU-8. The process allows for inexpensive production of the SPM sensors, the sensors being supplied to the user in a frame from which he can detach the sensors.

Abstract: Process for producing an SPM sensor having a holding element, a cantilever and a sensor tip which projects out of the surface of the cantilever and is delimited by three surfaces. According to the process, the starting material used is a (100)-silicon wafer. The main patterning process steps are carried out on the wafer back surface, so that an SPM sensor can be produced at low cost in a single batch run.

Abstract: Semiconductor components in a wafer assembly, in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer. The holder connects the respective component to the frame on one side and has a desired breaking point. The desired breaking point is designed as-a V-shaped groove, the surfaces of which form crystal planes. According to the method, the patterning for production of the holder takes place on the wafer back surface, with subsequent wet chemical anisotropic etching of the V-groove. In this way, the holder is produced independently of the processing of the wafer front surface, and when the semiconductor component is removed a defined broken edge is formed without there being any risk of the semiconductor component being damaged.