Abstract: A busbar for electrical power distribution applications. The busbar includes an aluminum (Al) metal matrix composite (MMC) having nanoscale carbon particles (e.g., carbon nanotubes). In one example, the concentration of the nanoscale carbon particles is in a range of 0.01 to 2 percent weight (wt %). The nanoscale carbon particles are evenly distributed throughout an entirety of the Al-MMC.

Abstract: A busbar for electric power distribution comprises an aluminum (Al) alloy including scandium (Sc) and optionally including zirconium (Zr), erbium (Er), and/or ytterbium (Yb). In an example, the Sc and/or other elements are uniformly distributed throughout an entirety of the Al alloy. In an example, the Al is in a range of 98 to 99.99 percent by weight (wt %), and the scandium (Sc) is in a range of 0.01 to 0.5 wt %.

Abstract: A magnet wire including a conductive core of aluminum and carbon (e.g., carbon nanotubes). The magnet wire also includes an insulating layer on a surface of the conductive core. The insulating layer and the conductive core collectively form a fully insulated wire of a coil associated with a magnet. The magnet wire is configured to form, for example, the coil of the magnet for any of an electrical motor, an electrical generator, a transformer, an inductor, or a speaker.

Abstract: This invention relates to using an imidazolium bromide ionic liquid as an additive to lithium bromide in the absorbent for an absorption chiller. The imidazolium bromide ionic liquid is useful to increase the working region and to lower the risk of crystallization in an absorption chiller. The invention provides an absorption chiller comprising a mixture of a refrigerant and an absorbent, and the absorbent comprises lithium bromide and one or more imidazolium bromide ionic liquids.

Abstract: The present invention relates to a lithium ion battery cell having a cathode comprising an active material and about 1-5% by weight of single wall carbon nanotubes (SWCNT) as a conductive additive, wherein the SWCNT has an inorganic impurity content of less than 5% by weight. The LiB cathode of the present invention improves performance characteristics such as higher capacity, lower cell resistance, and retention of greater capacity with cycling of the fully assembled cell, in comparison to LiB cells using only conventional conductive carbon additive in the cathode.

Abstract: A transmission line cable with conductors includes a metal-matrix composite (MMC) conductor of carbon nanotubes (CNT) dispersed in aluminum (Al) metal matrix. The concentration of CNT is uniform throughout an entirety of the MMC conductor.

Abstract: This invention relates to using an imidazolium bromide ionic liquid as an additive to lithium bromide in the absorbent for an absorption chiller. The imidazolium bromide ionic liquid is useful to increase the working region and to lower the risk of crystallization in an absorption chiller. The invention provides an absorption chiller comprising a mixture of a refrigerant and an absorbent, and the absorbent comprises lithium bromide and one or more imidazolium bromide ionic liquids.

Abstract: The present invention is directed to a stable aqueous dispersion of carbon, wherein the carbon comprises between 75-85 wt. % activated carbon, and 15-25 wt. % CNT having a purity of at least 95 wt. %. The dispersion is free of surfactant and is stable for at least two weeks. The aqueous dispersion is useful to make an active layer for an electrode of a supercapacitor. The present invention is also directed to a supercapacitor cell having at least one electrode comprising a current collector and an active layer, wherein the active layer comprises activated carbon and high purity carbon nanotubes and is free of binder. The active layer materials are both porous and conductive in order to increase the charge storage capability and to decrease the electrode resistance. In general, the content of carbon nanotubes in the active layer is between 10 and 30 wt. % and the purity of the carbon nanotubes is at least 95 wt. %.

Abstract: The present invention is directed to a supercapacitor cell having at least one electrode comprising a current collector and an active layer, wherein the active layer comprises activated carbon and high purity carbon nanotubes and is free of binder. The active layer materials are both porous and conductive in order to increase the charge storage capability and to decrease the electrode resistance. In general, the content of carbon nanotubes in the active layer is between 10 and 30 wt. % and the purity of the carbon nanotubes is at least 95 wt. %.

Abstract: This invention relates to using a guanidinium-based ionic liquid as an absorbent material in an absorption chiller. The invention provides an absorption chiller comprising a mixture of a refrigerant and an absorbent, and the absorbent is a guanidinium-based ionic liquid. A preferred refrigerant is water. This invention also provides a method for synthesizing N,N,N?,N?,N?,N?-hexamethylguanidinium acetate.

Abstract: This invention relates to using a eutectic mixture of two ionic liquids, as an absorbent material in an absorption chiller. The invention provides an absorption chiller comprising a mixture of a refrigerant and an absorbent, and the absorbent is a eutectic mixture of two ionic liquids.

Abstract: This invention relates to using a eutectic mixture of two ionic liquids, as an absorbent material in an absorption chiller. The invention provides an absorption chiller comprising a mixture of a refrigerant and an absorbent, and the absorbent is a eutectic mixture of two ionic liquids.

Abstract: This invention relates to using a guanidinium-based ionic liquid as an absorbent material in an absorption chiller. The invention provides an absorption chiller comprising a mixture of a refrigerant and an absorbent, and the absorbent is a guanidinium-based ionic liquid. A preferred refrigerant is water. This invention also provides a method for synthesizing N,N,N?,N?,N?,N?-hexamethylguanidinium acetate.

Abstract: This invention relates to using a eutectic mixture of two ionic liquids, as an absorbent material in an absorption chiller. The invention provides an absorption chiller comprising a mixture of a refrigerant and an absorbent, and the absorbent is a eutectic mixture of two ionic liquids.

Abstract: A two-dimensional magnetic recording (TDMR) read head with an antiferromagnetic (AFM) layer recessed behind a center shield. The TDMR read head comprises a first read sensor and a center shield over the first read sensor, wherein the center shield has a first thickness at an air-bearing surface (ABS) and a second thickness at a back surface, the first thickness being greater than the second thickness. A ferromagnetic layer is disposed over a portion of the center shield, wherein the ferromagnetic layer is recessed from the ABS. The TDMR read head also includes an antiferromagnetic layer over the ferromagnetic layer and a second read sensor over the antiferromagnetic layer. By recessing the AFM layer away from the ABS, the down-track spacing between read sensors is reduced, thereby improving TDMR read head performance.

Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.

Abstract: A wafer clamp according to one embodiment includes an outer ring, and at least three members extending inwardly from the outer ring, each of the members having a contact area for engaging a wafer. A system includes a structure having at least one ring, each ring being for receiving a wafer, and a wafer clamp configured to clamp a wafer to each ring, the wafer clamp having an outer ring, and at least three members extending inwardly from the outer ring, each of the members having a contact area for engaging a wafer.

Abstract: A magnetic sensor having a structure that optimizes magnetic pinning strength and magnetic free layer stability. The sensor includes a sensor stack having a magnetic free layer that extends to a first stripe height and a pinned layer that extends beyond the first stripe height to a second stripe height. Magnetic bias structures are formed at the sides of the free layer and are each formed upon a non-magnetic fill layer that raises the bias layer to the level of the free layer, the non-magnetic fill layer being at the level of the pinned layer in the sensor stack. The fill layer allows the free layer stripe height to be defined in a partial mill process while allowing the pinned layer to extend beyond the free layer stripe height and also advantageously allows the bias layers to have a stripe height that is aligned with the free layer stripe height.

Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.

Abstract: A two-dimensional magnetic recording (TDMR) read head has upper and lower read sensors wherein the lower read sensor has its magnetization biased by side shields of soft magnetic material. The center shield between the lower and upper sensors may be an antiparallel structure (APS) with two ferromagnetic layers separated by an antiparallel coupling (APC) layer. The center shield has a central region and two side regions, but there is no antiferromagnetic (AF) layer in the central region. Instead the two side regions of the upper ferromagnetic layer in the APS are pinned by AF tab layers that are electrically isolated from the upper sensor. The upper ferromagnetic layer and the APC layer in the APS may also be located only in the side regions. The thickness of the center shield can thus be made thinner, which reduces the free layer to free layer spacing.