Patents by Inventor Stefan Moessner

Stefan Moessner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bispecific antibodies against CD3EPSILON and ROR1
    Patent number: 11952421
    Abstract: The present invention relates to bispecific antibodies against ROR1 and CD3, their manufacture and use.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: April 9, 2024
    Assignee: Bristol-Myers Squibb Company
    Inventors: Minh Diem Vu, Klaus Strein, Oliver Ast, Tanja Fauti, Anne Freimoser-Grundschober, Ralf Hosse, Christian Klein, Ekkehard Moessner, Samuel Moser, Ramona Murr, Pablo Umana, Sabine Jung-Imhof, Stefan Klostermann, Michael Molhoj, Joerg Regula, Wolfgang Schaefer
  • Semiconductor devices having group III-V compound layers
    Patent number: 6734476
    Abstract: A power semiconductor device includes a substrate of first conductivity having a dopant concentration of a first level. The substrate is a group III-V compound material. A transitional layer of first conductivity is epitaxially grown over the substrate. The transitional layer has a dopant concentration of a second level and is a group III-V compound material. An epitaxial layer of first conductivity is grown over the transitional layer and has a dopant concentration of a third level. Electrical currents flow through the transitional and epitaxial layers when the device is operating.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: May 11, 2004
    Assignee: Ixys Corporation
    Inventors: Stefan Moessner, Markus Weyers
  • Semiconductor devices having group III-V compound layers
    Publication number: 20030006455
    Abstract: A power semiconductor device includes a substrate of first conductivity having a dopant concentration of a first level. The substrate is a group III-V compound material. A transitional layer of first conductivity is epitaxially grown over the substrate. The transitional layer has a dopant concentration of a second level and is a group III-V compound material. An epitaxial layer of first conductivity is grown over the transitional layer and has a dopant concentration of a third level. Electrical currents flow through the transitional and epitaxial layers when the device is operating.
    Type: Application
    Filed: April 30, 2002
    Publication date: January 9, 2003
    Applicant: IXYS Corporation
    Inventors: Stefan Moessner, Markus Weyers